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FQP2N80

Onsemi

FQP2N80 by Onsemi

FQP2N80 by Onsemi is a N-CHANNEL Power FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 9.6A and Avalanche Energy Rating of 180mJ. The transistor operates in ENHANCEMENT MODE and has a Max Power Dissipation of 85W, making it suitable for high-power electronic systems.

Median Price

$0.842

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 547 parts In-Stock

1+ parts

$0.835

100+ parts

$0.468

1k+ parts

$0.278

10k+ parts

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547

$0.835

$0.468

$0.278

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Rochester

USA . 900 parts In-Stock

1+ parts

-

100+ parts

$0.848

1k+ parts

$0.704

10k+ parts

$0.627

900

-

$0.848

$0.704

$0.627

DigiKey

USA . 900 parts In-Stock

1+ parts

-

100+ parts

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$0.720

10k+ parts

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900

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$0.720

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Verical

USA . 900 parts In-Stock

1+ parts

-

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-

1k+ parts

$0.879

10k+ parts

$0.784

900

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-

$0.879

$0.784

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,354 parts In-Stock

1+ parts

$0.660

100+ parts

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1,354

$0.660

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Vyrian

USA . 983 parts In-Stock

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$0.695

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983

$0.695

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Sensible Micro Corp

USA . 12,570 parts In-Stock

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12,570

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Ack Elektronik San.Tic.Ltd.Sti

. 1,902 parts In-Stock

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1,902

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ComSIT Distribution GmbH

Germany . 1,900 parts In-Stock

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1,900

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ACDS - Activité Composants Distribution Service

France . 1,875 parts In-Stock

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1,875

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Bristol Electronics

USA . 1,863 parts In-Stock

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1,863

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Dan-Mar Components

USA . 1,863 parts In-Stock

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1,863

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DigiKey Marketplace

USA . 900 parts In-Stock

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900

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Prism Electronics

USA . 76 parts In-Stock

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76

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,113 parts In-Stock

1+ parts

$0.626

100+ parts

-

1k+ parts

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1,113

$0.626

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Continental Prestige Electronics

USA . 900 parts In-Stock

1+ parts

$0.660

100+ parts

$0.370

1k+ parts

$0.220

10k+ parts

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900

$0.660

$0.370

$0.220

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Corohmni

South Africa . 172 parts In-Stock

1+ parts

$0.695

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172

$0.695

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Component Stockers USA

USA . 632 parts In-Stock

1+ parts

$0.710

100+ parts

$0.660

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632

$0.710

$0.660

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Microchip USA

USA . 5,523 parts In-Stock

1+ parts

$4.355

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5,523

$4.355

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RC Electronics

USA . 91,848 parts In-Stock

1+ parts

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100+ parts

$0.680

1k+ parts

$0.620

10k+ parts

$0.610

91,848

-

$0.680

$0.620

$0.610

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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TANS Electronics

Latvia . 7,122 parts In-Stock

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SupplyDigital Components

Austria . 4,975 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Problanco Electronics

Mexico . 3,384 parts In-Stock

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Supply Digital

USA . 2,878 parts In-Stock

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Kulean Microsystems

USA . 1,555 parts In-Stock

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Perfect Parts

USA . 1,463 parts In-Stock

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Northwest PG Solutions

USA . 861 parts In-Stock

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$4.577

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861

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$4.577

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UHIMA Technologies

Türkiye . 709 parts In-Stock

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709

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iodParts Technologies Inc.

India . 285 parts In-Stock

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285

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Native Components

USA . 107 parts In-Stock

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$4.530

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107

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$4.530

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Overview

Looking for a reliable and high-quality Power Field Effect Transistor? Look no further than the FQP2N80 by Onsemi. With a reputation for excellence in semiconductor technology, Onsemi delivers top-notch products like this N-CHANNEL transistor designed for switching applications. Offering a maximum operating temperature of 150°C and a maximum power dissipation of 85W, this transistor provides outstanding performance and durability. Whether you're in need of enhanced power management or efficient switching solutions, the FQP2N80 offers the value and reliability you're looking for.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance and efficiency compared to P-channel FETs, making this product a better choice for switching applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation in various electronic systems.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easier to control and operate, providing better efficiency and performance in switching applications.

Maximum Power Dissipation (Abs): 85 W

With a high power dissipation rating, this FET can handle a significant amount of power without overheating, making it suitable for high-power applications.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, making it suitable for applications where temperature may vary.

Technical Specifications

Power Field Effect Transistors (FET) FQP2N80 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

180 mJ

Minimum DS Breakdown Voltage:

800 V

Maximum Drain Current (Abs) (ID):

2.4 A

Maximum Drain Current (ID):

2.4 A

Maximum Drain-Source On Resistance:

6.3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

9.6 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQP2N80 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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