Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTR4503NT3
Onsemi
NTR4503NT3 by Onsemi is an N-CHANNEL FET with 2A max drain current and 0.73W power dissipation. Ideal for applications requiring a single configuration, surface mount capability, and operating temperature up to 150 °C. Perfect for enhancing performance in power management systems.
SINGLE
2 A
METAL-OXIDE SEMICONDUCTOR
e0
1
ENHANCEMENT MODE
150 Cel
235
N-CHANNEL
.73 W
FET General Purpose Power
YES
TIN LEAD
2SK3816-DL-E
The Onsemi 2SK3816-DL-E is a N-CHANNEL Power FET with 40A max drain current and 50W max power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies and motor control systems.
40 A
e6
50 W
Tin/Bismuth (Sn/Bi)
2SK3820-DL-E
2SK3820-DL-E by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 104A and EAS of 84.5mJ, making it suitable for high-power tasks. With an ID of 26A and 0.08ohm RDS(on), this transistor offers efficient performance in ENHANCEMENT MODE operation at up to 150 °C ambient temperature.
84.5 mJ
100 V
26 A
.08 ohm
110 pF
R-PSIP-T3
3
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
1.65 W
104 A
NO
THROUGH-HOLE
SWITCHING
SILICON
2SK4066-DL-E
The Onsemi 2SK4066-DL-E is a N-CHANNEL Power FET with 100A max drain current and 90W max power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies and motor control systems.
100 A
90 W
2SK4065-DL-E
The Onsemi 2SK4065-DL-E is a N-CHANNEL Power FET with 100A max drain current and 90W max power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies and motor control systems.
2SK3817-DL-E
The Onsemi 2SK3817-DL-E is a N-CHANNEL FET with 60A max drain current and 65W power dissipation. It operates in enhancement mode, suitable for high-power applications. With surface mount capability and metal-oxide semiconductor technology, it can handle up to 150 °C operating temperature.
60 A
65 W
ECH8659-M-TL-H
ECH8659-M-TL-H by Onsemi is an N-CHANNEL Power FET with 7A max drain current and 1.5W max power dissipation. It operates in enhancement mode with a max temp of 150 °C, making it suitable for high-power applications like motor control and power supplies.
7 A
1.5 W
CPH6444-TL-E
CPH6444-TL-E by Onsemi is a N-CHANNEL FET with 4.5A ID and 1.6W power dissipation. Ideal for applications requiring high drain current capabilities, such as power management systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with surface mount configuration for easy installation.
4.5 A
1.6 W
FW811-TL-E
FW811-TL-E by Onsemi is an N-CHANNEL Power FET with 8A max drain current and 2.2W power dissipation. It operates in enhancement mode, suitable for applications requiring high power efficiency at up to 150 °C. This surface-mount transistor features metal-oxide semiconductor technology and tin/bismuth terminal finish.
8 A
2.2 W
2SK4099LS-1E
The Onsemi 2SK4099LS-1E is an N-channel Power FET with a max drain current of 8.5A and power dissipation of 35W. It operates in enhancement mode, suitable for applications requiring high power handling such as power supplies or motor control systems at up to 150°C.
8.5 A
e3
35 W
TIN
EFC6602R-A-TR
EFC6602R-A-TR by Onsemi is an N-channel Power FET with 18A max drain current and 2W max power dissipation. Ideal for applications requiring high power efficiency, it operates in enhancement mode at up to 150 °C. With surface mount capability, it suits various electronic designs needing reliable performance.
18 A
260
2 W
30
NVMFD5853NT1G
NVMFD5853NT1G by Onsemi is an N-CHANNEL Power FET with 53A max drain current and 58W power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies and motor control systems.
53 A
175 Cel
58 W
FET General Purpose Powers
MATTE TIN
NVMFD5853NWFT1G
NVMFD5853NWFT1G by Onsemi is an N-CHANNEL Power FET with 53A max drain current and 58W max power dissipation. It operates in enhancement mode, suitable for applications requiring high power handling such as motor control and power supplies.
NTTFS4965NFTWG
NTTFS4965NFTWG by Onsemi is a single N-channel Power FET with 64A max drain current and 22.73W max power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as automotive electronics and industrial control systems.
64 A
22.73 W
NTMFS4965NFT3G
NTMFS4965NFT3G by Onsemi is a N-CHANNEL FET with 65A max drain current and 22.73W power dissipation. Ideal for power applications, it operates in enhancement mode with a max temp of 150 °C. Suitable for surface mount configurations, this MOSFET is widely used in high-power electronic devices.
65 A
NTLLD4951NFTWG
NTLLD4951NFTWG by Onsemi is an N-CHANNEL Power FET with 13A max drain current and 3.2W max power dissipation. Ideal for applications requiring high power efficiency in a compact form factor, such as power supplies and motor control systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with surface mount capability for easy integration.
13 A
3.2 W
BMS4007-1E
BMS4007-1E by Onsemi is a N-CHANNEL FET with 60A ID and 30W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power management systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with a single configuration design.
30 W
Tin (Sn)
SFT1431-W
SFT1431-W by Onsemi is a N-CHANNEL Power FET with 11A ID and 15W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power supplies and motor control systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with TIN BISMUTH terminal finish.
11 A
15 W
TIN BISMUTH
NTMFS4C09NT1G-001
NTMFS4C09NT1G-001 by Onsemi is a N-channel FET with 52A max drain current and 25.5W power dissipation. Ideal for high-power applications, it operates in enhancement mode at up to 150 °C. Suitable for surface mount configurations, this MOSFET is commonly used in power management systems.
52 A
25.5 W
SFT1443-TL-W
The Onsemi SFT1443-TL-W is a N-CHANNEL FET with 9A max drain current and 19W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power supplies and motor control systems.
9 A
19 W
NTMKB4895NT1G
The Onsemi NTMKB4895NT1G is a N-CHANNEL FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it features 0.006 ohm Drain-Source Resistance and 80mJ EAS rating. This ENHANCEMENT MODE transistor in CHIP CARRIER package is suitable for high-power circuit designs.
80 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
15 A
.006 ohm
R-XBCC-N2
2
UNSPECIFIED
CHIP CARRIER
NOT SPECIFIED
120 A
Not Qualified
NO LEAD
BOTTOM
NTMKE4891NT1G
NTMKE4891NT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features 210A IDM and 0.0026 ohm RDS(ON), suitable for high-power operations. With METAL-OXIDE SEMICONDUCTOR technology and SILICON material, it offers efficient performance in ENHANCEMENT MODE operation.
184 mJ
25 V
26.7 A
.0026 ohm
R-XBCC-N3
210 A
NTMD5838NLR2G
NTMD5838NLR2G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 35A IDM, and 0.0308 ohm RDS(on). It is used in applications requiring high power dissipation up to 3W, such as power management systems and motor control circuits.
20 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
40 V
8.9 A
7.4 A
.0308 ohm
R-PDSO-G8
8
SMALL OUTLINE
3 W
35 A
GULL WING
DUAL
NTMFS5832NLT1G
NTMFS5832NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 443A pulsed drain current. Ideal for applications requiring high power dissipation and low on-resistance in small outline packages.
134 mJ
111 A
20 A
.0065 ohm
R-PDSO-F5
5
96 W
443 A
FLAT
NVMFD5877NLT1G
NVMFD5877NLT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 74A IDM, and 0.06 ohm RDS. It's used for SWITCHING applications due to its 2 ELEMENTS WITH BUILT-IN DIODE configuration. Operating at 175°C max temp, it's ideal for high-power requirements in various electronic devices.
10.5 mJ
60 V
17 A
6 A
.06 ohm
R-PDSO-F6
6
23 W
74 A
NVMFD5877NLT3G
NVMFD5877NLT3G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 74A Max Pulsed Drain Current, 10.5mJ Avalanche Energy Rating, and 0.06ohm Max Drain-Source Resistance. This METAL-OXIDE SEMICONDUCTOR FET operates in ENHANCEMENT MODE with a max temp of 175 °C, making it suitable for high-power switching circuits.
NDD02N60Z-1G
NDD02N60Z-1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 9A IDM, and 4.8 ohm RDS(on). It's an N-CHANNEL transistor in PLASTIC/EPOXY package ideal for power applications requiring high voltage handling and low on-resistance.
120 mJ
600 V
2.2 A
4.8 ohm
57 W
NDF06N60ZH
NDF06N60ZH by Onsemi is a Power FET with 600V DS Breakdown Voltage, 28A IDM, and 113mJ EAS. Ideal for applications requiring high power dissipation in enhancement mode operation. Suitable for use in circuits where low drain-source resistance and high current handling are essential.
113 mJ
ISOLATED
7.1 A
1.2 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
28 A
NTP5863NG
NTP5863NG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 383A IDM, and 0.0078 ohm RDS(ON). It is used in power applications requiring high drain current handling capabilities.
157 mJ
97 A
.0078 ohm
383 A
NTP5864NG
NTP5864NG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 252A IDM, and 0.0124 ohm RDS(on). It is an N-CHANNEL transistor in PLASTIC/EPOXY package for high-power applications. Ideal for circuits requiring high current handling and low on-resistance.
63 A
.0124 ohm
107 W
252 A
NTD2955PT4G
NTD2955PT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 36A Max IDM and 0.18 ohm RDS(ON), suitable for ENHANCEMENT MODE operation. With a compact GULL WING package style and 175°C Max Operating Temp, it offers high power dissipation of 55W in various electronic designs.
216 mJ
12 A
.18 ohm
R-PSSO-G2
P-CHANNEL
55 W
36 A
Other Transistors
NTD4959NH-35G
NTD4959NH-35G by Onsemi is a N-channel Power FET with 30V DS Breakdown Voltage and 130A IDM. Ideal for switching applications, it features 0.0125 ohm RDS(on) and 112.5mJ EAS rating. Package: PLASTIC/EPOXY, Configuration: SINGLE WITH DIODE, Technology: MOSFET.
112.5 mJ
.0125 ohm
130 A
NTD4959NHT4G
NTD4959NHT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 130A IDM, and 0.0125 ohm Drain-Source Resistance. With a built-in diode and GULL WING terminals, this MOSFET operates in ENHANCEMENT MODE for efficient power management in various electronic devices.
NTBV5605T4G
The Onsemi NTBV5605T4G is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 55A IDM and 0.14 ohm RDS(ON), suitable for high-power operations. With a max power dissipation of 88W and operating temperature of 175 °C, it offers reliable performance in various electronic systems.
338 mJ
18.5 A
.14 ohm
88 W
55 A
NTDV18N06LT4G
NTDV18N06LT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 18A Drain Current, and 0.065 ohm On Resistance. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and built-in DIODE in a PLASTIC/EPOXY package. AEC-Q101 compliant, it operates b/w -55 to 175 °C with fast turn-on/off times of 180/120 ns.
72 mJ
.065 ohm
80 pF
-55 Cel
54 A
AEC-Q101
120 ns
180 ns
NTDV20P06LT4G
NTDV20P06LT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and EAS of 304mJ, suitable for high-power operations. With a compact SMALL OUTLINE package and -55 to 175 °C operating range, it offers efficient performance in various electronic designs.
304 mJ
15.5 A
.15 ohm
120 pF
50 A
185 ns
200 ns
NTMFS4933NT1G
Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 210 A; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;
NTMFD4901NFT1G
NTMFD4901NFT1G by Onsemi is an N-CHANNEL Power FET with 30V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a 28.8mJ EAS rating and 0.01 ohm RDS(on). Operating from -55 to 150 °C, this MOSFET has a compact SMALL OUTLINE package with DUAL terminals.
28.8 mJ
DRAIN SOURCE
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
23.4 A
13.5 A
.01 ohm
R-PDSO-F8
3.45 W
NTMFD4902NFT1G
NTMFD4902NFT1G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, 60A IDM, and 0.01 ohm RDS. Ideal for SWITCHING applications, it features SERIES configuration with 2 elements and built-in diode in a small outline package. Operating at up to 150 °C, it offers high power dissipation of 3.45W for efficient performance.
23 A
NTMFS5830NLT1G
NTMFS5830NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 0.0036 ohm max RDS(on). It is used in applications requiring high power dissipation up to 125W, such as power supplies and motor control systems.
361 mJ
172 A
.0036 ohm
125 W
690 A
NVD5117PLT4G
NVD5117PLT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 419A IDM, and 0.022 ohm RDS(on). Ideal for power applications requiring high drain current handling capabilities. Suitable for use in enhancement mode operation at up to 175°C operating temperature.
240 mJ
61 A
.022 ohm
118 W
419 A
Matte Tin (Sn) - annealed
NVMFS5832NLT1G
NVMFS5832NLT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 120A Drain Current, and 0.0072 ohm On Resistance. It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package suitable for high-power applications like motor control and power supplies. Operating in ENHANCEMENT MODE, it can handle up to 523A Pulsed Drain Current.
.0072 ohm
127 W
523 A
NVMFS5832NLT3G
NVMFS5832NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 120A Drain Current, and 0.0072 ohm On Resistance. It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for high-power applications requiring fast switching capabilities. Operating in ENHANCEMENT MODE, it offers a max power dissipation of 127W at temperatures up to 175°C.
NVTFS4824NTAG
NVTFS4824NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 46A Drain Current, and 0.0075 ohm On Resistance. Ideal for power applications requiring high current handling in compact spaces. Operates in Enhancement Mode with built-in diode, suitable for surface mount designs.
46 A
.0075 ohm
21 W
402 A
NVTFS4824NTWG
NVTFS4824NTWG by Onsemi is a single N-channel FET with built-in diode, featuring a min DS breakdown voltage of 30V and max pulsed drain current of 402A. Ideal for power applications, this MOSFET has an avalanche energy rating of 72mJ and max operating temperature of 175 °C.
NTMFS4946NT1G
NTMFS4946NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 200A IDM, 205mJ EAS, and 0.0051 ohm RDS(ON). Operating temp range -55 to 150 °C.
205 mJ
12.7 A
.0051 ohm
289 pF
55.5 W
200 A
NTDV3055L104-1G
NTDV3055L104-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.104 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and a built-in DIODE. Operating at up to 175 °C, this N-CHANNEL transistor has a max power dissipation of 48W in a RECTANGULAR package.
61 mJ
.104 ohm
48 W
45 A
NTDV3055L104T4G
NTDV3055L104T4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.104 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration with a built-in diode in a PLASTIC/EPOXY package. Operating in enhancement mode, this MOSFET has a max power dissipation of 48W and can handle up to 175 °C temperature.
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