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Onsemi Power Field Effect Transistors (FET) 1,070

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NXH010P120MNF1PTNG by Onsemi

NXH010P120MNF1PTNG

Onsemi

NXH010P120MNF1PTNG by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 342A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications, it features SERIES CONNECTED configuration with METAL-OXIDE SEMICONDUCTOR technology. Operating from -40 to 175 °C, this RECTANGULAR package has 18 terminals and a max power dissipation of 250W.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

114 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

39 pF

R-XUFM-X18

2

18

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

342 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH010P120MNF1PNG by Onsemi

NXH010P120MNF1PNG

Onsemi

NXH010P120MNF1PNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 342A IDM, and 0.014 ohm RDS(on). Ideal for switching applications, it features SERIES CONNECTED configuration with 2 elements, built-in diode & thermistor. Operating in enhancement mode, it has a max power dissipation of 250W and operates b/w -40 to 175 °C.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

114 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

39 pF

R-XUFM-X18

2

18

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

342 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH006P120MNF2PTG by Onsemi

NXH006P120MNF2PTG

Onsemi

NXH006P120MNF2PTG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 912A IDM, and 0.0072 ohm RDS(on). It is used for switching applications in power systems. The transistor features a rectangular package shape, 36 terminals, and operates in enhancement mode up to 175°C.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

304 A

.0072 ohm

METAL-OXIDE SEMICONDUCTOR

49 pF

R-XUFM-X36

2

36

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

950 W

912 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NVHL110N65S3HF by Onsemi

NVHL110N65S3HF

Onsemi

NVHL110N65S3HF by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 69A and EAS of 380mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.11 ohm RDS(on) and can handle up to 240W power dissipation.

380 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

30 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

240 W

69 A

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVH4L020N090SC1 by Onsemi

NVH4L020N090SC1

Onsemi

NVH4L020N090SC1 by Onsemi is a N-CHANNEL FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features 504A IDM, 264mJ EAS, and 0.028 ohm RDS(on). With a max power dissipation of 484W and operating temperature range from -55 to 175 °C, it's suitable for high-power environments.

264 mJ

SINGLE WITH BUILT-IN DIODE

900 V

116 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

24 pF

TO-247

R-PSFM-T4

e3

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

484 W

504 A

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

NXH020U90MNF2PTG by Onsemi

NXH020U90MNF2PTG

Onsemi

NXH020U90MNF2PTG by Onsemi is a N-CHANNEL FET with 900V DS Breakdown Voltage and 447A IDM. Ideal for SWITCHING applications, it features 0.014 ohm Drain-Source On Resistance and operates b/w -40 to 175 °C.

ISOLATED

COMPLEX

900 V

149 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

44 pF

R-XUFM-X20

2

20

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

352 W

447 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH040F120MNF1PTG by Onsemi

NXH040F120MNF1PTG

Onsemi

NXH040F120MNF1PTG by Onsemi is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a BRIDGE configuration with 4 elements, it has a max IDM of 90A and 0.056 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this FET utilizes SILICON CARBIDE technology and can handle temperatures from -40 to 175 °C.

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

30 A

.056 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-XUFM-X22

4

22

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

74 W

90 A

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

NXH020F120MNF1PG by Onsemi

NXH020F120MNF1PG

Onsemi

N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 119 W; Transistor Element Material: SILICON CARBIDE; Package Body Material: UNSPECIFIED;

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

51 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

19 pF

R-XUFM-X22

4

22

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

119 W

153 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH020F120MNF1PTG by Onsemi

NXH020F120MNF1PTG

Onsemi

NXH020F120MNF1PTG by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 153A IDM, and 0.03 ohm RDS(on). Ideal for SWITCHING applications, it features a BRIDGE configuration with 4 elements, SILICON CARBIDE material, and operates b/w -40 to 175 °C.

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

51 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

19 pF

R-XUFM-X22

4

22

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

119 W

153 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH040F120MNF1PG by Onsemi

NXH040F120MNF1PG

Onsemi

NXH040F120MNF1PG by Onsemi is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage, 90A IDM, and 0.056 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. This RECTANGULAR package has 4 elements with built-in diode and thermistor, ideal for high-power operations up to 175°C.

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

30 A

.056 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-XUFM-X22

4

22

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

74 W

90 A

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

NXH010P120MNF1PTG by Onsemi

NXH010P120MNF1PTG

Onsemi

NXH010P120MNF1PTG by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 342A IDM, and 0.014 ohm RDS(on). It is used for SWITCHING applications in SERIES CONNECTED configuration. Operating from -40 to 175 °C, it features METAL-OXIDE SEMICONDUCTOR tech and SILICON CARBIDE material.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

114 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

39 pF

R-XUFM-X18

2

18

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

342 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH010P120MNF1PG by Onsemi

NXH010P120MNF1PG

Onsemi

NXH010P120MNF1PG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 342A IDM, and 0.014 ohm RDS(on). Ideal for switching applications in power electronics due to its SERIES CONNECTED configuration. Operating from -40 to 175 °C, it features a METAL-OXIDE SEMICONDUCTOR technology and built-in diode & thermistor.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

114 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

39 pF

R-XUFM-X18

2

18

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

342 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

FQP50N06L-EPKE0003 by Onsemi

FQP50N06L-EPKE0003

Onsemi

FQP50N06L-EPKE0003 by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It has 210A IDM and 990mJ EAS, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.025 ohm RDS(on) and can handle up to 121W power dissipation.

990 mJ

SINGLE WITH BUILT-IN DIODE

60 V

52.4 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

120 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

121 W

210 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

470 ns

820 ns

FCPF11N65 by Onsemi

FCPF11N65

Onsemi

FCPF11N65 by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 33A IDM, 340mJ EAS, and 0.38 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 36W and operates b/w -55 to 150 °C.

340 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

11 A

.38 ohm

METAL-OXIDE SEMICONDUCTOR

63 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

36 W

33 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

370 ns

285 ns