Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NVMFS5C423NLT1G
Onsemi
NVMFS5C423NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS Breakdown Voltage, and 900A Max Pulsed Drain Current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive systems or industrial equipment.
280 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
150 A
.003 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-F5
e3
1
5
ENHANCEMENT MODE
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
83 W
900 A
AEC-Q101
YES
Matte Tin (Sn) - annealed
FLAT
DUAL
30
SILICON
NVMFS5C423NLT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain-Source On Resistance: .003 ohm; Package Body Material: PLASTIC/EPOXY;
NVMFS5C423NLWFT1G
NVMFS5C423NLWFT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 900A pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics meeting AEC-Q101 standards.
NVMFS5C423NLWFT3G
NVMFS5C423NLWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.003 ohm RDS(on). Ideal for power management applications in automotive industry due to AEC-Q101 compliance and 175 °C max operating temp.
NTMFS4C250NT1G
Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 69 A;
69 A
MATTE TIN
NTMFS4C290NT1G
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 8.2 A; Terminal Finish: MATTE TIN;
8.2 A
NTMFS5H400NLT1G
NTMFS5H400NLT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0011 ohm RDS(on). Ideal for power applications due to its 160W Pdiss, -55 to 150°C operating temp range, and DUAL terminal position.
360 mJ
330 A
.0011 ohm
87 pF
150 Cel
160 W
NVATS5A304PLZT4G
NVATS5A304PLZT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 480A IDM, 656mJ EAS, and 0.0089 ohm Drain-Source On Resistance. With a max power dissipation of 108W and operating temperature range from -55 to 175 °C, it is suitable for high-power switching applications in automotive electronics.
656 mJ
60 V
120 A
.0089 ohm
R-PSSO-G2
e6
2
P-CHANNEL
108 W
480 A
TIN BISMUTH
GULL WING
SINGLE
SWITCHING
NTMFS4C020NT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 161 W; No. of Elements: 1; No. of Terminals: 5;
862 mJ
30 V
370 A
.00095 ohm
350 pF
161 W
NTMFS4C022NT3G
NTMFS4C022NT3G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 352A Pulsed Drain Current. Ideal for applications requiring high power efficiency, such as power supplies and motor control systems. Operating in Enhancement Mode, it offers low 0.0024 ohm Drain-Source Resistance for improved performance.
549 mJ
136 A
.0024 ohm
67 pF
352 A
TIN
NTMFS5C404NT3G
NTMFS5C404NT3G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 900A Pulsed Drain Current. Ideal for applications requiring high power dissipation, such as automotive systems and industrial equipment due to its low on-resistance of 0.0007 ohm. Operating in enhancement mode, it offers a max operating temperature of 175 °C.
907 mJ
378 A
.0007 ohm
120 pF
200 W
NTMFS5C450NT1G
NTMFS5C450NT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 102A ID, and 0.0033 ohm RDS(on). It's used in power applications due to its 800A IDM, 215mJ EAS rating, and -55 to 175°C operating temperature range.
215 mJ
102 A
.0033 ohm
28 pF
68 W
800 A
NTMFS5C450NT3G
NTMFS5C450NT3G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 800A IDM, and 0.0033 ohm RDS(on). It is used in applications requiring high power dissipation and operates in enhancement mode.
NVATS5A107PLZT4G
NVATS5A107PLZT4G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage and 165A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.017 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. Suitable for high-power systems requiring efficient switching capabilities.
80 mJ
55 A
.017 ohm
60 W
165 A
NVATS5A108PLZT4G
NVATS5A108PLZT4G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 231A IDM, 95mJ EAS, and 0.0104 ohm Drain-Source Resistance. With a temperature range of -55 to 175 °C, it is suitable for automotive electronics meeting AEC-Q101 standards.
95 mJ
77 A
.0104 ohm
72 W
231 A
NVATS5A302PLZT4G
NVATS5A302PLZT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A IDM, 197mJ EAS, and 0.018 ohm RDS(ON). With a max power dissipation of 84W and operating temperature range of -55 to 175 °C, it is suitable for high-power electronic systems.
197 mJ
80 A
.018 ohm
84 W
320 A
NVMFS6B25NLT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: DRAIN;
170 mJ
100 V
33 A
8 A
.039 ohm
62 W
177 A
NVMFS6B25NLT3G
NVMFS6B25NLT3G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 177A IDM, and 0.039 ohm RDS(on). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS6B25NLWFT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62 W; JESD-30 Code: R-PDSO-F5; Maximum Pulsed Drain Current (IDM): 177 A;
NVMFS6B25NLWFT3G
NVMFS6B25NLWFT3G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 177A IDM, and 0.039 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS6B75NLT1G
NVMFS6B75NLT1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 141A IDM, and 0.046 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
177 mJ
28 A
7 A
.046 ohm
56 W
141 A
NVMFS6B75NLWFT1G
NVMFS6B75NLWFT1G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 141A IDM, and 0.046 ohm RDS(ON). Ideal for power applications in automotive electronics due to AEC-Q101 compliance and 177mJ EAS rating.
NVMFS6B85NLT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Reference Standard: AEC-Q101; Package Shape: RECTANGULAR;
116 mJ
19 A
5.6 A
.072 ohm
42 W
93 A
NVMFS6B85NLT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 175 Cel;
NVMFS6B85NLWFT1G
NVMFS6B85NLWFT1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 93A IDM, and 0.072 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
NTMFS4C032NT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 21.6 W; Maximum Feedback Capacitance (Crss): 127 pF; Maximum Drain Current (ID): 7.2 A;
22 mJ
38 A
7.2 A
.00735 ohm
127 pF
21.6 W
106 A
NVATS5A114PLZT4G
NVATS5A114PLZT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 180A IDM and 0.016 ohm RDS(ON), suitable for high-power operations. With a small outline package and AEC-Q101 standard, it ensures reliable performance in automotive electronics.
100 mJ
60 A
.016 ohm
180 A
NVD6415ANLT4G-VF01
NVD6415ANLT4G-VF01 by Onsemi is a Power FET with 100V DS Breakdown Voltage, 80A IDM, and 79mJ EAS. Ideal for automotive applications due to AEC-Q101 standard compliance and -55 to 175 °C operating temperature range.
79 mJ
23 A
.056 ohm
70 pF
NTMFS4C028NT3G
NTMFS4C028NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 146A IDM, and 0.00473 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150 °C.
42 mJ
52 A
9 A
.00473 ohm
25.5 W
146 A
SVD5803NT4G
The Onsemi SVD5803NT4G is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 85A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 240mJ Avalanche Energy Rating, and operates in ENHANCEMENT MODE. Perfect for high-power circuit designs requiring efficient switching capabilities.
240 mJ
85 A
.0057 ohm
228 A
SVD5806NT4G
SVD5806NT4G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 67A and EAS of 39mJ, operating in ENHANCEMENT MODE. This small outline transistor has a max ID of 33A, 0.019 ohm RDS(on), and can withstand temperatures from -55 to 175 °C.
39 mJ
.019 ohm
67 A
NTMFS5C609NLT1G
NTMFS5C609NLT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for power applications in automotive electronics due to its high current handling capability and low on-resistance.
451 mJ
250 A
.0023 ohm
167 W
NTMFS5H600NLT3G
NTMFS5H600NLT3G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 900A IDM. Ideal for applications requiring high power dissipation, such as automotive systems and industrial equipment due to its low on-resistance of 0.0017 ohm and max operating temperature of 150 °C.
338 mJ
.0017 ohm
NVATS4A102PZT4G
NVATS4A102PZT4G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 132A IDM, 58mJ EAS, and 0.0185 ohm RDS(ON). With a temperature range of -55 to 175 °C, it is suitable for automotive (AEC-Q101) and industrial applications.
58 mJ
44 A
.0185 ohm
48 W
132 A
NVATS4A103PZT4G
NVATS4A103PZT4G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 180A IDM and 0.013 ohm RDS(ON), suitable for high-power operations. With a compact SMALL OUTLINE package and -55 to 175 °C operating range, it meets AEC-Q101 standards for automotive use.
57 mJ
.013 ohm
NVATS4A104PZT4G
NVATS4A104PZT4G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 246A IDM, 130mJ EAS, and 0.0084 ohm RDS(ON). With a temperature range of -55 to 175 °C, it is suitable for automotive (AEC-Q101) and industrial applications.
130 mJ
82 A
.0084 ohm
246 A
NID9N05BCLT4G
NID9N05BCLT4G by Onsemi is a single N-channel FET with built-in diode and resistor, ideal for switching applications. It features a min DS breakdown voltage of 52V, max pulsed drain current of 35A, and max operating temperature of 175 °C. This MOSFET has a package style of small outline and terminal finish of matte tin, making it suitable for high-power applications.
160 mJ
SINGLE WITH BUILT-IN DIODE AND RESISTOR
52 V
.181 ohm
40 pF
1.74 W
35 A
3850 ns
950 ns
NVD6416ANLT4G-VF01
NVD6416ANLT4G-VF01 by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 70A IDM, and 0.074 ohm RDS(ON). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
50 mJ
.074 ohm
71 W
70 A
NTDV20P06LT4G-VF01
NTDV20P06LT4G-VF01 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and EAS of 304mJ, operating in ENHANCEMENT MODE with -55 to 175 °C temperature range. The transistor has 0.15 ohm RDS(on), DRAIN case connection, and AEC-Q101 compliance.
304 mJ
15.5 A
.15 ohm
65 W
50 A
185 ns
200 ns
SSVD5804NT4G
SSVD5804NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 125A IDM, 195mJ EAS, and 0.0075 ohm Drain-Source Resistance. Suitable for high-power switching circuits in automotive and industrial electronics due to its robust design and high power dissipation capability.
195 mJ
.0075 ohm
280 pF
125 A
FDB9409L-F085
The Onsemi FDB9409L-F085 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 90A ID. Ideal for SWITCHING applications, it features a built-in DIODE, 94W power dissipation, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max temp of 175 °C and meets AEC-Q101 standards.
33.7 mJ
90 A
.0047 ohm
TO-263AB
245
94 W
72 ns
53 ns
NVATS4A101PZT4G
NVATS4A101PZT4G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 81A IDM, 25mJ EAS, and 0.03ohm RDS(ON), operating in the -55 to 175 °C temperature range. Suitable for automotive use (AEC-Q101) due to its robust design and high power dissipation of 36W.
25 mJ
27 A
.03 ohm
36 W
81 A
FDMS1D4N03S
FDMS1D4N03S by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 211A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 1140A Pulsed Drain Current, and operates in ENHANCEMENT MODE. Suitable for surface mount with a max power dissipation of 74W.
384 mJ
211 A
.00109 ohm
180 pF
MO-240AA
74 W
1140 A
92 ns
45 ns
NTD5C464NT4G
NTD5C464NT4G by Onsemi is an N-channel Power FET with a 40V DS breakdown voltage and 59A max drain current. Ideal for applications requiring high power dissipation, such as motor control systems or power supplies. Features include a built-in diode, small outline package style, and -55 to 175 °C operating temperature range.
136 mJ
59 A
.0058 ohm
TO-252AA
40 W
NTD5C688NLT4G
NTD5C688NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 77A IDM, and 0.04 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package ideal for power management applications. Operating from -55 to 175 °C, it features a built-in diode and avalanche energy rating of 48 mJ.
48 mJ
17 A
.04 ohm
18 W
NVD5407NT4G
NVD5407NT4G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 75A IDM, and 0.026 ohm RDS(on). Ideal for applications requiring high power dissipation in small outline packages. Suitable for enhancement mode operation in various electronic devices.
150 mJ
.026 ohm
80 pF
75 W
75 A
STD5406NT4G-VF01
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Terminal Finish: Matte Tin (Sn) - annealed; Case Connection: DRAIN;
450 mJ
.01 ohm
300 pF
100 W
SVD14N03RT4G
SVD14N03RT4G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 28A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 20.8W and operates in the temperature range of -55 to 150 °C.
FAST SWITCHING
25 V
14 A
11.4 A
.13 ohm
20.8 W
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