Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTMFS5C406NT1G
Onsemi
NTMFS5C406NT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0008 ohm RDS(on). Ideal for power applications in small outline packages with operating temperatures from -55 to 175 °C.
439 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
353 A
.0008 ohm
METAL-OXIDE SEMICONDUCTOR
150 pF
R-PDSO-F5
e3
1
5
ENHANCEMENT MODE
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
179 W
900 A
YES
Matte Tin (Sn) - annealed
FLAT
DUAL
30
SILICON
NTMFS5C670NT1G
NTMFS5C670NT1G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 440A IDM, and 0.007 ohm RDS(on). It is used in power management applications due to its high drain current capacity and low on-resistance. The transistor operates in enhancement mode with a max operating temperature of 175 °C.
166 mJ
60 V
71 A
.007 ohm
8.5 pF
61 W
440 A
NTTFS5CS70NLTWG
NTTFS5CS70NLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 16A ID, and 0.0091 ohm RDS(ON). Ideal for applications requiring high power dissipation in small outline packages. Operating from -55 to 175 °C, it suits various enhancement mode circuit designs.
16 A
.0091 ohm
15 pF
R-PDSO-F8
8
NOT SPECIFIED
63 W
Matte Tin (Sn)
NVBLS0D7N06C
NVBLS0D7N06C by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 900A IDM, 800mJ EAS, and 0.00075 ohm RDS(on). Operating from -55 to 175 °C, it has a small outline package style and meets AEC-Q101 standard.
800 mJ
470 A
.00075 ohm
METAL SEMICONDUCTOR
92 pF
MO-299A
R-PSSO-F2
2
314 W
AEC-Q101
SINGLE
SWITCHING
NVHL060N090SC1
NVHL060N090SC1 by Onsemi is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 184A and EAS of 162mJ, operating in ENHANCEMENT MODE. With a package style of FLANGE MOUNT and SILICON CARBIDE element material, it offers high performance in various power electronics systems.
162 mJ
900 V
46 A
.084 ohm
11 pF
TO-247
R-PSFM-T3
3
FLANGE MOUNT
221 W
184 A
NO
THROUGH-HOLE
SILICON CARBIDE
94 ns
106 ns
NVTFWS016N06CTAG
NVTFWS016N06CTAG by Onsemi is a Power FET with N-CHANNEL polarity, 60V DS Breakdown Voltage, and 160A IDM. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.
22 mJ
32 A
.0163 ohm
5.7 pF
S-PDSO-F8
SQUARE
36 W
160 A
NVTYS003N04CTWG
NVTYS003N04CTWG by Onsemi is a Power FET with 40V DS Breakdown Voltage, 740A IDM, and 0.0031 ohm RDS(ON). It's an N-CHANNEL transistor in PLASTIC/EPOXY package for applications requiring high power dissipation and low on-resistance. Ideal for automotive electronics due to AEC-Q101 compliance and 175 °C operating temperature.
215 mJ
107 A
.0031 ohm
42 pF
R-PDSO-X5
68 W
740 A
UNSPECIFIED
NVTYS004N04CTWG
NVTYS004N04CTWG by Onsemi is a Power FET with 40V DS Breakdown Voltage, 520A IDM, and 202mJ EAS. Ideal for applications requiring high power dissipation in a small outline package, such as automotive electronics.
202 mJ
20 A
.004 ohm
21 pF
55 W
520 A
NVTYS005N04CTWG
NVTYS005N04CTWG by Onsemi is a Power FET with 40V DS Breakdown Voltage, 321A IDM, and 0.0048 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
104 mJ
19 A
.0048 ohm
22 pF
50 W
321 A
NVTYS006N06CLTWG
NVTYS006N06CLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 440A IDM, and 0.005 ohm RDS(on). It is an N-CHANNEL transistor in PLASTIC/EPOXY package for applications requiring high power dissipation and low on-resistance. Ideal for automotive electronics due to AEC-Q101 compliance and 175 °C operating temperature.
142 mJ
18 A
.005 ohm
16 pF
114 W
MATTE TIN
FDWS9511L-F085
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68.2 W; JEDEC-95 Code: MO-240AA; No. of Terminals: 5;
25 mJ
30 A
.0205 ohm
MO-240AA
P-CHANNEL
68.2 W
298 A
AMPLIFIER
FDP2D9N12C
FDP2D9N12C by Onsemi is a N-CHANNEL Power FET with 120V DS Breakdown Voltage and 18A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.005 ohm On Resistance, and can handle up to 333W power dissipation.
120 V
TO-220AB
333 W
FDWS9510L-F085
Onsemi's FDWS9510L-F085 is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 50A Drain Current, 0.0135 ohm On Resistance, and operates in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and AEC-Q101 standard compliance, it ensures reliable performance in automotive electronics.
32 mJ
50 A
.0135 ohm
75 W
222 ns
20 ns
FDU5N60NZTU
FDU5N60NZTU by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 16A IDM and 216mJ EAS. With a max power dissipation of 83W, this transistor operates in ENHANCEMENT MODE and has a -55 to 150 °C temperature range.
216 mJ
600 V
4 A
2 ohm
7.5 pF
TO-251AA
R-PSIP-T3
150 Cel
IN-LINE
83 W
130 ns
90 ns
FDD9510L-F085
Onsemi's FDD9510L-F085 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, 50A Drain Current, and 0.022 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) and industrial sectors due to its high power dissipation of 75W and fast turn on/off times of 44ns/220ns.
35.3 mJ
.022 ohm
TO-252AA
R-PSSO-G2
GULL WING
220 ns
44 ns
FDMD8430
FDMD8430 by Onsemi is an N-CHANNEL Power FET with 30V DS Breakdown Voltage and 562A IDM. Commonly used for SWITCHING applications, it features a 96mJ EAS rating and 0.00212 ohm Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
96 mJ
SOURCE
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
28 A
.00212 ohm
160 pF
R-PDSO-N8
2.1 W
29 W
562 A
NO LEAD
150 ns
36 ns
NTTFS5C478NLTAG
NTTFS5C478NLTAG by Onsemi is a Power FET with 40V DS Breakdown Voltage, 104A IDM, and 0.025 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.
43 mJ
26 A
10 A
.025 ohm
8 pF
20 W
104 A
FDD9511L-F085
FDD9511L-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 25A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an EAS of 25mJ.
25 A
.021 ohm
48.4 W
235 ns
45 ns
FCH165N65S3R0-F155
FCH165N65S3R0-F155 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, 47.5A IDM, and 0.165 ohm RDS(on). Ideal for SWITCHING applications due to its 154W Pdiss, -55 to 150 °C operating temp range, and EAS of 87mJ.
87 mJ
650 V
.165 ohm
TO-247AB
154 W
47.5 A
FCH125N65S3R0-F155
FCH125N65S3R0-F155 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 60A Max Pulsed Drain Current, 115mJ Avalanche Energy Rating, and 0.125 ohm Max RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 181W and can withstand temperatures from -55 to 150 °C.
115 mJ
24 A
.125 ohm
181 W
60 A
FDD9509L-F085
FDD9509L-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage. It features SINGLE configuration with BUILT-IN DIODE for SWITCHING applications. Operating in ENHANCEMENT MODE, it has 0.0075 ohm Drain-Source On Resistance and 175°C Max Temp, suitable for AEC-Q101 standards.
82 mJ
.0075 ohm
NXH40B120MNQ1SNG
NXH40B120MNQ1SNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features 44A max drain current, 156W power dissipation, and operates in enhancement mode. With a max operating temperature of 150 °C and silicon carbide element material, it offers high performance in various industrial settings.
ISOLATED
COMPLEX
1200 V
44 A
19 pF
R-XUFM-X32
32
-40 Cel
156 W
132 A
UPPER
NXH40B120MNQ0SNG
NXH40B120MNQ0SNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 38A max drain current, and 0.055 ohm RDS(on). Ideal for switching applications, it features common drain configuration with built-in diode and thermistor. Operating in depletion mode, this MOSFET has a max power dissipation of 118W and can withstand temperatures up to 150 °C.
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
38 A
.055 ohm
R-XUFM-P22
22
DEPLETION MODE
118 W
114 A
PIN/PEG
NXH80B120MNQ0SNG
NXH80B120MNQ0SNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring common drain configuration, it has 2 elements with built-in diode and operates in enhancement mode. With a max pulsed drain current of 69A and max power dissipation of 69W, this MOSFET is designed for high-power applications.
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
23 A
.11 ohm
R-XUFM-X22
69 W
69 A
NXH027B120MNF2PTG
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 134 W; Terminal Form: UNSPECIFIED; Package Body Material: UNSPECIFIED;
84 A
.038 ohm
64 pF
R-XUFM-X23
23
134 W
NVH4L060N065SC1
NVH4L060N065SC1 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features 232A Max Pulsed Drain Current and 269W Max Power Dissipation, suitable for high-power applications in industrial electronics and power supplies.
50.3 A
10.17 pF
R-PSFM-T4
4
269 W
232 A
NVBG060N065SC1
NVBG060N065SC1 by Onsemi is a Power FET with 650V DS Breakdown Voltage, 231A IDM, and 344W Power Dissipation. Ideal for high-power applications in industries like automotive, renewable energy, and industrial equipment due to its N-CHANNEL configuration and SILICON CARBIDE material.
57.5 A
10.18 pF
TO-263CB
R-PSSO-G7
7
344 W
231 A
NVD6416ANT4G-VF01
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Terminal Position: SINGLE; No. of Elements: 1;
100 V
17 A
.081 ohm
50 pF
71 W
62 A
NTH4L015N065SC1
NTH4L015N065SC1 by Onsemi is a Power FET with 650V DS Breakdown Voltage, 859A IDM, and 753W Max Power Dissipation. Ideal for high-power applications requiring N-CHANNEL configuration in RECTANGULAR package style with SILICON CARBIDE element material.
164 A
39.33 pF
753 W
859 A
NTBG045N065SC1
NTBG045N065SC1 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features a Max IDM of 315A and ID of 73.7A, suitable for high-power applications like industrial motor drives and power supplies. With an operating temperature range from -55 to 175 °C, it offers reliable performance in various environments.
73.7 A
13.78 pF
245
425 W
315 A
NVH4L045N065SC1
NVH4L045N065SC1 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 65.5A Drain Current. Ideal for high-power applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 338W, this MOSFET is suitable for various industrial uses.
65.5 A
13.76 pF
338 W
312 A
NVH4L015N065SC1
NVH4L015N065SC1 by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage. It has a max IDM of 859A and ID of 164A, making it suitable for high-power applications. With a package style of FLANGE MOUNT, it operates in temperatures ranging from -55 to 175 °C, ideal for power electronics.
NVHL040N65S3
NVHL040N65S3 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a Max ID of 65A and 0.04 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with an EAS of 358mJ.
358 mJ
65 A
.04 ohm
417 W
162.5 A
FCH029N65S3-F155
FCH029N65S3-F155 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 463W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
503 mJ
75 A
.029 ohm
463 W
200 A
NVH4L050N65S3F
NVH4L050N65S3F by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, 145A IDM, and 403W Power Dissipation. Ideal for high-power applications in automotive electronics due to its AEC-Q101 standard compliance and robust design.
830 mJ
58 A
.05 ohm
14 pF
403 W
145 A
NVH040N65S3F
NVH040N65S3F by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 162.5A IDM and 0.04ohm RDS(ON), operating in ENHANCEMENT MODE at temperatures from -55 to 150 °C. Suitable for high-power applications requiring reliable performance.
1009 mJ
446 W
NTHL095N65S3H
NTHL095N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 84A IDM, and 0.095 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with METAL-OXIDE SEMICONDUCTOR technology.
284 mJ
.095 ohm
208 W
NTHL067N65S3H
NTHL067N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 112A IDM, and 0.067 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration. Operating in ENHANCEMENT MODE, it can handle up to 266W power dissipation.
422 mJ
40 A
.067 ohm
266 W
112 A
NVH4L110N65S3F
NVH4L110N65S3F by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 69A IDM. Ideal for applications requiring high power dissipation up to 240W, such as automotive systems due to AEC-Q101 standard compliance.
380 mJ
240 W
NTHL125N65S3H
NTHL125N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 67A IDM, and 0.125 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 171W and can handle up to 24A ID.
171 W
67 A
NVTFS8D1N08HTAG
NVTFS8D1N08HTAG by Onsemi is a Power FET with 80V DS Breakdown Voltage, 216A IDM, and 0.0083 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance.
113 mJ
80 V
61 A
.0083 ohm
46 pF
216 A
NTH4LN067N65S3H
NTH4LN067N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 112A IDM, and 0.067 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 266W.
NTH4L067N65S3H
NTH4L067N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 112A IDM, and 0.067 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 266W. The transistor features an avalanche energy rating of 422mJ and can withstand temperatures from -55 to 150 °C.
NVTFS007N08HLTAG
NVTFS007N08HLTAG by Onsemi is a Power FET with 80V DS Breakdown Voltage, 347A IDM, and 0.007 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance.
1433 mJ
14.1 pF
79 W
347 A
NVTFWS007N08HLTAG
NVTFWS007N08HLTAG by Onsemi is a Power FET with 80V DS Breakdown Voltage, 347A IDM, and 1433mJ EAS. Ideal for applications requiring high power dissipation in a small outline package, such as automotive systems or industrial equipment.
NTH4LN095N65S3H
NTH4LN095N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 84A IDM, and 0.095 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
NTH4LN019N65S3H
NTH4LN019N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 328A IDM, and 0.0193 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE operation. Features include SINGLE configuration with BUILT-IN DIODE, METAL-OXIDE SEMICONDUCTOR tech, and -55 to 150 °C operating temp range.
1421 mJ
.0193 ohm
5 W
328 A
NVBGS1D2N08H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 259 W; Maximum Feedback Capacitance (Crss): 45 pF; Minimum DS Breakdown Voltage: 80 V;
1500 mJ
290 A
.00134 ohm
45 pF
TO-263
R-PSSO-G6
6
259 W
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