Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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FDB9503L-F085
Onsemi
FDB9503L-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 110A ID. Ideal for SWITCHING applications, it features SINGLE configuration, METAL-OXIDE SEMICONDUCTOR tech, and operates b/w -55 to 175 °C.
984 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
110 A
.0026 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
245
P-CHANNEL
AEC-Q101
YES
Matte Tin (Sn) - annealed
GULL WING
SINGLE
30
SWITCHING
SILICON
FDD9409L-F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Terminal Position: SINGLE; Case Connection: DRAIN;
33.7 mJ
90 A
.0044 ohm
TO-252AA
260
N-CHANNEL
150 W
70 ns
47 ns
FDD9411L-F085
FDD9411L-F085 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 25A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.0115 ohm.
22 mJ
25 A
.0115 ohm
28 pF
48.4 W
MATTE TIN
36 ns
17 ns
FCPF165N65S3L1
FCPF165N65S3L1 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 47.5A and EAS of 87mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.165 ohm RDS(on) and can handle up to 35W power dissipation at temperatures ranging from -55 to 150 °C.
87 mJ
ISOLATED
650 V
19 A
.165 ohm
TO-220AB
R-PSFM-T3
3
150 Cel
FLANGE MOUNT
35 W
47.5 A
NO
THROUGH-HOLE
NVMFS5A140PLZT1G
NVMFS5A140PLZT1G by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 140A Drain Current. Ideal for applications requiring high power dissipation, such as automotive systems, it features a built-in diode and operates in enhancement mode. With a compact rectangular package and matte tin finish, it ensures efficient performance in harsh environments.
420 mJ
140 A
7.2 ohm
R-PDSO-F5
5
3.8 W
200 W
560 A
FLAT
DUAL
NVMFS5A140PLZT3G
NVMFS5A140PLZT3G by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 140A Drain Current. Ideal for applications requiring high power dissipation up to 200W, such as automotive electronics due to AEC-Q101 standard compliance. Features include 560A Pulsed Drain Current and 7.2ohm On Resistance for efficient performance in enhancement mode operation.
NVMFS5A140PLZWFT1G
NVMFS5A140PLZWFT1G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage, 560A IDM, and 420mJ EAS. Ideal for power applications in automotive industry due to AEC-Q101 compliance and high drain current capacity.
NVMFS5A140PLZWFT3G
NVMFS5A140PLZWFT3G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage and 560A IDM. Ideal for power applications, it features a built-in diode, 140A ID, and 7.2 ohm RDS(on). Suitable for automotive use with AEC-Q101 standard compliance.
NVMFS5A160PLZT1G
NVMFS5A160PLZT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage and 400A IDM. Ideal for power applications, it operates in Enhancement Mode with 0.0105 ohm Drain-Source On Resistance. Its AEC-Q101 standard makes it suitable for automotive electronics.
335 mJ
60 V
.0105 ohm
400 A
NVMFS5A160PLZT3G
NVMFS5A160PLZT3G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 400A IDM, and 0.0105 ohm RDS(ON). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5A160PLZWFT1G
NVMFS5A160PLZWFT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 400A IDM, and 0.0105 ohm RDS(ON). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance and high operating temperature range of -55 to 175 °C.
10
NVMFS5A160PLZWFT3G
NVMFS5A160PLZWFT3G by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, 400A IDM, and 0.0105 ohm RDS. It's used in automotive applications due to AEC-Q101 standard compliance and can operate b/w -55 to 175 °C for enhanced performance.
FCPF190N65S3L1
FCPF190N65S3L1 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has 35A IDM, 76mJ EAS, and 0.19 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, it operates b/w -55 to 150 °C. Suitable for high-power circuits requiring efficient switching capabilities.
76 mJ
14 A
.19 ohm
33 W
35 A
FDB9406L-F085
The Onsemi FDB9406L-F085 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 110A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an EAS of 217mJ. Suitable for surface mount with GULL WING terminals, it can handle up to 176W power dissipation at temperatures ranging from -55°C to 175°C.
217 mJ
.0022 ohm
176 W
145 ns
90 ns
NVMFS5C442NLWFAFT1G
NVMFS5C442NLWFAFT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS Breakdown Voltage, and 900A Pulsed Drain Current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.
265 mJ
130 A
.0037 ohm
37 pF
83 W
900 A
NVMFS5C410NLWFAFT1G
NVMFS5C410NLWFAFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0012 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
706 mJ
330 A
.0012 ohm
116 pF
167 W
NVMFS5C682NLAFT1G
NVMFS5C682NLAFT1G by Onsemi is a power FET with N-channel configuration and a min DS breakdown voltage of 60V. It has a max pulsed drain current of 130A and an avalanche energy rating of 43mJ. This transistor is suitable for applications requiring high power dissipation and temperature resistance, such as automotive electronics or industrial equipment.
43 mJ
.0315 ohm
28 W
EFC3J018NUZTDG
EFC3J018NUZTDG by Onsemi is a N-CHANNEL FET with COMMON DRAIN configuration, ideal for SWITCHING applications. It features 2 ELEMENTS with built-in DIODE and RESISTOR, operating in DEPLETION MODE. With a max power dissipation of 2.5W and max temperature of 150°C, it is suitable for various power management tasks.
SOURCE
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
R-PBCC-N6
6
DEPLETION MODE
CHIP CARRIER
2.5 W
NO LEAD
BOTTOM
NTDV20N06T4G-VF01
NTDV20N06T4G-VF01 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.046 ohm On Resistance. Ideal for switching applications in automotive electronics due to its AEC-Q101 standard compliance and high power dissipation of 60W.
170 mJ
20 A
.046 ohm
120 pF
60 W
60 A
140 ns
FCPF250N65S3L1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-PSFM-T3;
57 mJ
12 A
.25 ohm
31 W
30 A
FDMD8440L
FDMD8440L by Onsemi is an N-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 521A and EAS of 265mJ, making it suitable for high-power operations. With a compact SMALL OUTLINE package style and low 0.0026 ohm RDS(on), it ensures efficient performance in various electronic designs.
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
87 A
70 pF
R-PDSO-N8
8
NOT SPECIFIED
521 A
68 ns
35 ns
NVD4810NT4G-VF01
NVD4810NT4G-VF01 by Onsemi is a Power FET with 30V DS Breakdown Voltage, 120A IDM, and 0.0157 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 50W. AEC-Q101 compliant, this N-CHANNEL FET has a temperature range from -55 to 175 °C.
98 mJ
30 V
45 A
9 A
.0157 ohm
200 pF
50 W
120 A
FDMC035N10X1
FDMC035N10X1 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 130A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 50W and operates b/w -55 to 150 °C.
181 mJ
100 V
5.5 A
.037 ohm
MO-240BA
S-PDSO-N5
SQUARE
115 ns
34 ns
NVMFS5C460NLWFAFT3G
NVMFS5C460NLWFAFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 396A IDM, and 0.0072 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
107 mJ
78 A
.0072 ohm
22 pF
396 A
FDWS9508L-F085
FDWS9508L-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 80A ID. Ideal for SWITCHING applications, it features a built-in DIODE, 214W Power Dissipation, and operates in ENHANCEMENT MODE. This METAL-OXIDE SEMICONDUCTOR device has a -55 to 175 °C temperature range and AEC-Q101 certification.
211 mJ
80 A
.0085 ohm
MO-240
214 W
780 ns
23 ns
FCPF360N65S3R0L
FCPF360N65S3R0L by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 25A IDM and 40mJ EAS. Operating in ENHANCEMENT MODE, it has a max power dissipation of 27W and -55 to 150 °C operating temperature range.
40 mJ
10 A
.36 ohm
27 W
FCPF250N65S3R0L
FCPF250N65S3R0L by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, 30A IDM, and 0.25 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 31W Power Dissipation and -55 to 150 °C temperature range.
FCPF600N60ZL1
FCPF600N60ZL1 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 22.2A IDM, 135mJ EAS, and 0.6 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150 °C and turn on/off times of 60ns/116ns.
135 mJ
600 V
7.4 A
.6 ohm
45 pF
22.2 A
116 ns
60 ns
FDP4D5N10C
FDP4D5N10C by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 512A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 150W, this transistor has a turn on time of 126ns and turn off time of 90ns.
486 mJ
128 A
91 A
.0045 ohm
35 pF
2.4 W
512 A
126 ns
FDPF8D5N10C
FDPF8D5N10C by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 304A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 35W, this transistor has an operating temperature range of -55 to 175 °C.
76 A
25 pF
304 A
38 ns
42 ns
FDWS9509L-F085
FDWS9509L-F085 by Onsemi is a P-CHANNEL FET for switching applications. It features a 40V DS breakdown voltage, 65A max drain current, and 0.0153 ohm max on-resistance. With an EAS of 84mJ, it operates in the -55 to 175°C temperature range.
84 mJ
65 A
.0153 ohm
MO-240AA
107 W
405 ns
22 ns
FDMC4D9P20X8
FDMC4D9P20X8 by Onsemi is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, 335A IDM, and 0.0049 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 40W.
54 mJ
20 V
75 A
.0049 ohm
1455 pF
S-PDSO-N8
40 W
335 A
781 ns
54 ns
FDD9507L-F085
FDD9507L-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.0072 ohm. Suitable for high-power systems requiring fast switching speeds.
259 mJ
100 A
227 W
710 ns
21 ns
NVMFD5C478NLWFT1G
NVMFD5C478NLWFT1G by Onsemi is an N-CHANNEL Power FET with 40V DS Breakdown Voltage and 98A Pulsed Drain Current. Ideal for automotive applications due to AEC-Q101 standard compliance, it features a compact rectangular package and low on-resistance of 0.025 ohm.
48 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
29 A
10.5 A
.025 ohm
9 pF
R-PDSO-F8
23 W
98 A
FCP260N65S3
FCP260N65S3 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 30A and an Avalanche Energy Rating of 57mJ. Operating in ENHANCEMENT MODE, it has a Max Power Dissipation of 90W and can handle up to 12A Drain Current.
.26 ohm
90 W
FCP360N65S3R0
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Terminal Position: SINGLE; Package Shape: RECTANGULAR;
NTHL040N65S3F
NTHL040N65S3F by Onsemi is a power FET with 650V DS breakdown voltage, 162.5A IDM, and 0.04 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 446W. This N-channel transistor has a rectangular package shape and can handle up to 65A ID.
1009 mJ
.04 ohm
TO-247
446 W
162.5 A
NVMFS5C460NWFT1G
NVMFS5C460NWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 352A IDM, and 0.0053 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
1667 mJ
71 A
.0053 ohm
352 A
NVMFS5C466NT1G
NVMFS5C466NT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 226A pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.
70 mJ
49 A
.0081 ohm
15 pF
37 W
226 A
FDMC010N08LC
FDMC010N08LC by Onsemi is a N-CHANNEL Power FET with 80V DS Breakdown Voltage, 200A IDM, and 96mJ EAS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with -55 to 150 °C temperature range.
96 mJ
80 V
50 A
.0109 ohm
30 pF
52 W
200 A
26 ns
FPF1C2P5BF07A
FPF1C2P5BF07A by Onsemi is an N-CHANNEL Power FET with 650V DS Breakdown Voltage and 156A IDM. Ideal for POWER CONTROL applications, it features a max power dissipation of 250W, 0.09 ohm RDS(on), and operates b/w -40 to 150 °C.
LOW CONDUCTION LOSS
COMPLEX
36 A
.09 ohm
R-XUFM-X24
24
-40 Cel
UNSPECIFIED
250 W
156 A
UL APPROVED
PRESS FIT
UPPER
POWER CONTROL
SVD5865NLT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Minimum DS Breakdown Voltage: 60 V; Maximum Pulsed Drain Current (IDM): 203 A;
36 mJ
.019 ohm
203 A
NTMFS4H013NFT3G
NTMFS4H013NFT3G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 505A IDM, and 0.0014 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 150 °C max temp.
390 mJ
25 V
269 A
43 A
.0014 ohm
104 W
505 A
NTTFS6H854NTAG
NTTFS6H854NTAG by Onsemi is a Power FET with 80V DS Breakdown Voltage, 175A IDM, and 0.0231 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.
205 mJ
9.5 A
.0231 ohm
5.4 pF
S-PDSO-F8
68 W
175 A
NVHL025N65S3
NVHL025N65S3 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 187.5A and EAS of 2025mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.025 ohm RDS(on) and can handle up to 595W power dissipation at temperatures ranging from -55 to 150 °C.
2025 mJ
595 W
187.5 A
NVMTS0D4N04CLTXG
NVMTS0D4N04CLTXG by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for power applications. Featuring 900A IDM and 4454mJ EAS, it operates in Enhancement Mode with 0.00064 ohm RDS(ON). With AEC-Q101 standard compliance, this MOSFET is suitable for automotive and industrial electronics.
4454 mJ
553.8 A
.00064 ohm
390 pF
244 W
NVMFS6H858NT1G
NVMFS6H858NT1G by Onsemi is a Power FET with 80V DS Breakdown Voltage, 137A IDM, and 0.0207 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current and low resistance capabilities.
151 mJ
.0207 ohm
4.7 pF
42 W
137 A
FDWS9520L-F085
FDWS9520L-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 281A IDM. Ideal for AMPLIFIER applications, it features a 90mJ EAS rating, 0.0125 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with a small outline package style, it has a max temp of 175°C and -55°C min operating temp.
90 mJ
60.8 A
.0125 ohm
R-PDSO-F6
75 W
281 A
AMPLIFIER
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