Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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FQP13N50C-F105
Onsemi
FQP13N50C-F105 by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 52A and EAS of 860mJ, operating in ENHANCEMENT MODE. The transistor has a RECTANGULAR package shape with THROUGH-HOLE terminals, suitable for high-power FLANGE MOUNT designs.
860 mJ
SINGLE WITH BUILT-IN DIODE
500 V
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
52 A
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
NVMFS5C670NLWFAFT3G
NVMFS5C670NLWFAFT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 440A IDM, and 0.0088 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
166 mJ
DRAIN
60 V
71 A
.0088 ohm
15 pF
R-PDSO-F5
5
175 Cel
-55 Cel
SMALL OUTLINE
260
61 W
440 A
AEC-Q101
YES
FLAT
DUAL
30
NVD6828NLT4G-VF01
NVD6828NLT4G-VF01 by Onsemi is a Power FET with 90V DS Breakdown Voltage, 206A IDM, and 0.025 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
90 mJ
90 V
41 A
.025 ohm
R-PSSO-G2
2
83 W
206 A
GULL WING
NVMFS6H801NWFT3G
NVMFS6H801NWFT3G by Onsemi is a Power FET with 80V DS Breakdown Voltage, 900A IDM, and 960mJ EAS. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics. Operating from -55 to 175 °C, it features an N-CHANNEL configuration with built-in diode and metal-oxide semiconductor technology.
960 mJ
80 V
157 A
.0028 ohm
22 pF
R-PDSO-F6
6
166 W
900 A
Matte Tin (Sn) - annealed
FCPF190N60E-F154
FCPF190N60E-F154 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 61.8A IDM and 0.19 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 39W and can handle up to 150°C operating temperature.
400 mJ
ISOLATED
600 V
20.6 A
.19 ohm
165 pF
150 Cel
39 W
61.8 A
252 ns
94 ns
FCPF190N60-F154
FCPF190N60-F154 by Onsemi is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 60.6A IDM, 400mJ EAS, and 0.199 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150 °C and -55°C min temp.
20.2 A
.199 ohm
128 pF
60.6 A
158 ns
80 ns
FCPF260N60E-F154
FCPF260N60E-F154 by Onsemi is a N-CHANNEL FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 45A IDM and 292.5mJ EAS. Operating in ENHANCEMENT MODE, it has 0.26 ohm RDS(on) and can handle up to 36W power dissipation.
292.5 mJ
15 A
.26 ohm
130 pF
36 W
45 A
224 ns
82 ns
FCPF260N65FL1-F154
FCPF260N65FL1-F154 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has 45A IDM, 293mJ EAS for SWITCHING applications. With 0.26 ohm RDS(on), it operates in ENHANCEMENT MODE at -55 to 150 °C, making it ideal for high-power switching circuits.
293 mJ
650 V
1 pF
140 ns
86 ns
FCPF400N80ZL1-F154
FCPF400N80ZL1-F154 by Onsemi is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It has a max IDM of 33A and EAS of 339mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.4 ohm RDS(on), -55 to 150 °C temperature range, and fast ton of 84ns/toff of 127ns.
339 mJ
800 V
11 A
.4 ohm
.5 pF
35.7 W
33 A
127 ns
84 ns
NTBGS3D5N06C
NTBGS3D5N06C by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 491A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0037 ohm RDS(on), and 176mJ EAS rating. Operating in ENHANCEMENT MODE, this transistor has a max temp of 175°C and DRAIN connection.
176 mJ
127 A
.0037 ohm
21 pF
TO-263CB
R-PSSO-G6
115 W
491 A
NVH050N65S3F
The Onsemi NVH050N65S3F is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 145A IDM, 830mJ EAS, and 0.05 ohm RDS(ON). With a max power dissipation of 403W and operating temperature range from -55 to 150 °C, it offers reliable performance in various industrial settings.
830 mJ
58 A
.05 ohm
13 pF
TO-247
403 W
145 A
NVH4L027N65S3F
NVH4L027N65S3F by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 187.5A IDM. Ideal for applications requiring high power dissipation, such as automotive systems due to its AEC-Q101 reference standard compliance.
1610 mJ
75 A
.0274 ohm
26 pF
R-PSFM-T4
4
595 W
187.5 A
NVHL050N65S3F
The Onsemi NVHL050N65S3F is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 145A IDM. Ideal for SWITCHING applications, it features a max power dissipation of 403W, -55 to 150 °C operating temperature range, and METAL-OXIDE SEMICONDUCTOR technology.
NVMFS4C308NWFT1G
NVMFS4C308NWFT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 144A IDM, and 0.007 ohm RDS(ON). It's used for SWITCHING applications in ENHANCEMENT MODE. This SMALL OUTLINE transistor operates b/w -55 to 175 °C with 39pF Crss.
42 mJ
30 V
17.2 A
.007 ohm
39 pF
30.6 W
144 A
NVH4L018N075SC1
NVH4L018N075SC1 by Onsemi is a N-CHANNEL FET with 750V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 483A and EAS of 162mJ, suitable for high-power operations. With an RDS(on) of 0.018 ohm and operating temperature range from -55 to 175 °C, it offers reliable performance in various environments.
162 mJ
750 V
140 A
.018 ohm
31 pF
500 W
483 A
SILICON CARBIDE
NVHL040N65S3HF
NVHL040N65S3HF by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 162.5A IDM. Ideal for SWITCHING applications, it features 0.04 ohm RDS(on) and 446W Pdiss in a RECTANGULAR package with Matte Tin finish.
1009 mJ
65 A
.04 ohm
446 W
162.5 A
NVHL065N65S3F
NVHL065N65S3F by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 115A IDM. Ideal for applications requiring high power dissipation up to 337W, such as automotive systems due to AEC-Q101 standard compliance.
635 mJ
46 A
.065 ohm
11 pF
NOT SPECIFIED
337 W
115 A
NVHL082N65S3HF
NVHL082N65S3HF by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max IDM of 100A and 0.082 ohm Drain-Source Resistance. Operating in ENHANCEMENT MODE, this transistor has an EAS of 510mJ and can handle up to 313W power dissipation.
510 mJ
40 A
.082 ohm
313 W
100 A
NVTYS005N06CLTWG
NVTYS005N06CLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 430A IDM, and 155mJ EAS. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.
155 mJ
18 A
.0073 ohm
R-PDSO-X8
8
76 W
430 A
UNSPECIFIED
NTHL099N60S5
NTHL099N60S5 by Onsemi is a Power FET with 600V DS Breakdown Voltage, 95A IDM, and 0.099 ohm RDS(on). It is used for switching applications in enhancement mode with a max power dissipation of 184W. The transistor operates b/w -55 to 150 °C and features an avalanche energy rating of 232mJ.
232 mJ
.099 ohm
184 W
95 A
NVMFWS003P03P8ZT1G
NVMFWS003P03P8ZT1G by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage and 900A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0018 ohm RDS(on), and operates in ENHANCEMENT MODE. AEC-Q101 compliant, it has a max power dissipation of 168.7W and can withstand up to 175 °C operating temperature.
186 mJ
234 A
.0018 ohm
4100 pF
P-CHANNEL
168.7 W
NVH082N65S3F
NVH082N65S3F by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It is ideal for SWITCHING applications, offering 100A IDM and 510mJ EAS. Operating in ENHANCEMENT MODE, it has a max power dissipation of 313W and can handle up to 150 °C temperature.
NVTFS015P03P8ZTAG
NVTFS015P03P8ZTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 353A IDM and 88mJ EAS, suitable for high-power operations. With -55 to 175 °C operating range and AEC-Q101 standard, it ensures reliable performance in automotive environments.
88 mJ
17 A
.0075 ohm
875 pF
S-PDSO-F8
SQUARE
88.2 W
353 A
NTBL070N65S3
NTBL070N65S3 by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 110A and EAS of 214mJ, suitable for high-power operations. With a Drain Current of 44A and 0.07 ohm RDS(on), it offers efficient performance in ENHANCEMENT MODE operation.
214 mJ
44 A
.07 ohm
14.6 pF
R-PSSO-F8
312 W
110 A
NTMT185N60S5H
NTMT185N60S5H by Onsemi is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 53A IDM and 124mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 116W and -55 to 150 °C operating temperature range, it offers reliable performance in various electronic systems.
124 mJ
.185 ohm
S-PDSO-N8
116 W
53 A
NO LEAD
NTTFS012N10MD
NTTFS012N10MD by Onsemi is a Power FET with 100V DS Breakdown Voltage, 217A IDM, and 0.0144 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150 °C. This N-CHANNEL transistor has a built-in diode and comes in an 8-terminal package.
121 mJ
100 V
.0144 ohm
8.4 pF
62 W
217 A
NVTYS002N03CLTWG
NVTYS002N03CLTWG by Onsemi is a Power FET with N-CHANNEL polarity, 30V DS Breakdown Voltage, and 675A IDM. Ideal for applications requiring high power dissipation up to 75W in enhancement mode operation. Features include a built-in diode, avalanche energy rating of 320mJ, and AEC-Q101 compliance for automotive use.
320 mJ
29 A
.0031 ohm
43 pF
3.2 W
75 W
675 A
PCFA86210F
PCFA86210F by Onsemi is an N-CHANNEL FET with a 150V DS Breakdown Voltage and 0.0063 ohm Drain-Source On Resistance. Ideal for high-power applications, it operates in Enhancement Mode with a max power dissipation of 500W. AEC-Q101 certified, suitable for automotive and industrial sectors.
502 mJ
150 V
169 A
.0063 ohm
16 pF
R-XUUC-N2
UNCASED CHIP
UPPER
PCFA86361F
PCFA86361F by Onsemi is a N-CHANNEL FET with 80V DS Breakdown Voltage, 429W Power Dissipation, and 371A Drain Current. Ideal for high-power applications in automotive electronics due to its AEC-Q101 standard compliance and robust design.
819 mJ
371 A
.0014 ohm
139 pF
429 W
PCFA86561F
PCFA86561F by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 429W Power Dissipation, and 441A Drain Current. Ideal for high-power applications in automotive systems due to its AEC-Q101 standard compliance and robust design.
1167 mJ
441 A
.0011 ohm
255 pF
NTC020N120SC1
NTC020N120SC1 by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a 1200V DS breakdown voltage, 412A max pulsed drain current, and 264mJ avalanche energy rating. Operating in enhancement mode, it has a max power dissipation of 535W and can withstand temperatures from -55 to 175 °C.
264 mJ
1200 V
103 A
.028 ohm
R-XUUC-N4
535 W
412 A
NTC040N120SC1
NTC040N120SC1 by Onsemi is a Power FET with 1200V DS Breakdown Voltage, 240A IDM, and 0.056 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with SILICON CARBIDE material. With a max power dissipation of 348W and operating temperature range from -55 to 175 °C, it offers reliable performance.
613 mJ
60 A
.056 ohm
12 pF
348 W
240 A
NTC080N120SC1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 178 W; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
171 mJ
31 A
.11 ohm
6.5 pF
R-XUUC-N3
178 W
132 A
NTHL019N60S5F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 568 W; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-PSFM-T3;
1208 mJ
.019 ohm
568 W
393 A
NTLJS14D0P03P8ZTAG
NTLJS14D0P03P8ZTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 165A IDM, 0.0135 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 2.4W and peak reflow temperature of 260C, it offers reliable performance in various electronic devices.
.0135 ohm
690 pF
S-PDSO-N6
2.4 W
165 A
254 ns
52 ns
NVMFS5831NLWFT1G
NVMFS5831NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0048 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Operating in enhancement mode with a max power dissipation of 143W at temperatures ranging from -55 to 175 °C.
683 mJ
40 V
26 A
.0048 ohm
389 pF
143 W
NTHL120N60S5Z
NTHL120N60S5Z by Onsemi is a Power FET with 600V DS Breakdown Voltage, 81A IDM, and 0.12 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150 °C. The transistor features a SINGLE configuration with BUILT-IN DIODE and METAL-OXIDE SEMICONDUCTOR technology.
191 mJ
28 A
.12 ohm
160 W
81 A
NVMFWS0D7N04XMT1G
NVMFWS0D7N04XMT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 987mJ EAS. Ideal for power applications in automotive electronics due to AEC-Q101 standard compliance and high drain current capacity.
987 mJ
331 A
.0007 ohm
112 pF
134 W
NVMYS2D3N06CTWG
NVMYS2D3N06CTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Features include SINGLE configuration, GULL WING terminals, and ENHANCEMENT MODE operation.
622 mJ
171 A
.0023 ohm
24 pF
R-PSSO-G4
134.4 W
NXH020P120MNF1PG
NXH020P120MNF1PG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 153A IDM, and 0.03ohm RDS(on). Ideal for switching applications, it features SERIES CONNECTED configuration with 2 elements, built-in diode & thermistor. Operating in enhancement mode, this MOSFET has a max power dissipation of 119W and operates b/w -40 to 175 °C.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
51 A
.03 ohm
19 pF
R-XUFM-X18
18
-40 Cel
119 W
153 A
NXH040P120MNF1PG
NXH040P120MNF1PG by Onsemi is an N-CHANNEL FET with 1200V DS breakdown voltage and 74A IDM. Ideal for switching applications, it features a package style of FLANGE MOUNT, operating temperature range of -40 to 175 °C, and 0.056 ohm max drain-source resistance.
30 A
74 W
74 A
NVTFS012P03P8ZTAG
NVTFS012P03P8ZTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 47A IDM, and 0.02 ohm RDS(ON). Ideal for SWITCHING applications in automotive (AEC-Q101) and industrial sectors. Operating range from -55 to 175 °C with METAL-OXIDE SEMICONDUCTOR technology.
7 A
.02 ohm
506 pF
47 A
NVTFWS012P03P8ZTAG
NVTFWS012P03P8ZTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 47A IDM, 0.02 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a compact SQUARE package and -55 to 175 °C temperature range, it's suitable for various power management needs.
NVHL055N60S5F
NVHL055N60S5F by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It is used for SWITCHING applications, featuring a max IDM of 159A and EAS of 417mJ. Operating in ENHANCEMENT MODE, it has a Drain Current of 45A and 0.055ohm RDS(on), suitable for high-power requirements.
417 mJ
.055 ohm
275 W
159 A
NVMFS4C05NT3G
NVMFS4C05NT3G by Onsemi is a N-CHANNEL FET with 116A ID and 79W power dissipation. Ideal for high-power applications, it operates at up to 175 °C, making it suitable for industrial use in demanding environments. With surface mount configuration and matte tin finish, it offers reliable performance in various power systems.
116 A
79 W
FET General Purpose Power
NVMFS4C05NWFT3G
NVMFS4C05NWFT3G by Onsemi is a single N-channel Power FET with 116A max drain current and 79W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C. Ideal for high-power applications requiring efficient switching in surface-mount configurations.
TIN
NTMFS6B05NT3G
NTMFS6B05NT3G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 370A IDM, and 0.008 ohm RDS(on). It is used in power management applications due to its high current handling capability and low on-resistance.
125 mJ
104 A
16 A
.008 ohm
138 W
370 A
CPH6354-TL-W
Onsemi's CPH6354-TL-W is a P-CHANNEL FET with 60V DS breakdown voltage, 16A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates in SMALL OUTLINE package style.
4 A
.1 ohm
R-PDSO-G6
e6
TIN BISMUTH
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