Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTP75N03L09G
Onsemi
NTP75N03L09G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 225A IDM, and 0.008 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
AVALANCHE RATED
1500 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
75 A
.008 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
260
N-CHANNEL
150 W
225 A
Not Qualified
FET General Purpose Power
NO
TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
NTP75N06G
NTP75N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max temp of 175 °C and EAS of 844 mJ.
844 mJ
60 V
.0095 ohm
175 Cel
-55 Cel
2.4 W
NTP52N10G
NTP52N10G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 156A IDM, 800mJ EAS, and 0.03 ohm RDS(on). Package style is FLANGE MOUNT with SILICON element material and 175 °C max operating temp.
800 mJ
100 V
60 A
.03 ohm
214 W
156 A
NTD32N06-1G
NTD32N06-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high performance with 90A Pulsed Drain Current capability.
313 mJ
32 A
.026 ohm
R-PSIP-T3
IN-LINE
93.75 W
90 A
FET General Purpose Powers
NTD32N06G
NTD32N06G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm RDS(ON). Ideal for switching applications, it features an Enhancement Mode in a small outline package with Gull Wing terminals. Operating at up to 175 °C, it has a max power dissipation of 93.75W.
R-PSSO-G2
2
SMALL OUTLINE
YES
GULL WING
NTD32N06T4G
NTD32N06T4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm RDS(ON). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, it has a max power dissipation of 93.75W at 175 °C.
NTB45N06LG
NTB45N06LG by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 45A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 150A Pulsed Drain Current, and 0.028 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
LOGIC LEVEL COMPATIBLE
240 mJ
45 A
.028 ohm
150 A
NTB45N06LT4G
NTB45N06LT4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 45A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.028 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this transistor has a max power dissipation of 2.4W and can handle up to 150A pulsed drain current.
MATTE TIN
30
NTB30N06LG
NTB30N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 30A Drain Current, 0.046 ohm On Resistance, and 88.2W Power Dissipation in a SMALL OUTLINE package. Operating at up to 175 °C, it offers high performance in various electronic devices.
101 mJ
30 A
.046 ohm
88.2 W
Tin (Sn)
40
NTB30N06LT4G
NTB30N06LT4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 30A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 90A Pulsed Drain Current, and 0.046 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
NTB60N06G
NTB60N06G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 180A and EAS of 454mJ, operating in ENHANCEMENT MODE. With a Drain Current of 60A and 0.014 ohm RDS(on), this MOSFET is suitable for high-power circuit designs.
454 mJ
.014 ohm
180 A
NTB75N06G
NTB75N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
NTB75N06T4G
NTB75N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 2.4W Pdiss and 175 °C Tmax.
NTD110N02R-001G
NTD110N02R-001G by Onsemi is a Power FET with 24V DS Breakdown Voltage, 110A IDM, and 0.0062 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 175 °C Max Temp. With a built-in diode, this N-CHANNEL transistor has a 120mJ EAS rating.
120 mJ
24 V
12.5 A
.0062 ohm
110 W
110 A
NTD110N02R-001
NTD110N02R-001 by Onsemi is a Power FET with 24V DS Breakdown Voltage, 110A IDM, and 0.0062 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 120mJ EAS rating. With a max power dissipation of 110W and operating temperature up to 175 °C, this N-CHANNEL transistor in PLASTIC/EPOXY package is suitable for high-power electronic designs.
e0
235
TIN LEAD
NTD110N02RG
NTD110N02RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 110A IDM, and 0.0062 ohm RDS(on). This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 92.5W.
92.5 W
NTD110N02RT4G
NTD110N02RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 110A IDM, and 0.0062 ohm RDS(on). With a max power dissipation of 92.5W and operating temperature of 175 °C, it is ideal for high-power electronic systems requiring efficient switching capabilities.
NTD20N06-1G
NTD20N06-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.046 ohm On Resistance. Ideal for switching applications, it features an Enhancement Mode operation and a built-in diode in a rectangular package with through-hole terminals.
170 mJ
20 A
60 W
MLD1N06CLT4G
MLD1N06CLT4G by Onsemi is a N-CHANNEL Power FET with 59V DS Breakdown Voltage and 1.8A Pulsed Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with built-in BIPOLAR TRANSISTOR, DIODE, and RESISTOR in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 40W at 150 °C temperature.
80 mJ
SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR
59 V
2 A
1 A
.75 ohm
40 W
1.8 A
MTD6N20ET4G
MTD6N20ET4G by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 18A Max Pulsed Drain Current, 0.7 ohm Max RDS(on), and 50W Max Power Dissipation. The transistor operates in ENHANCEMENT MODE and has a max temperature of 150 °C, making it suitable for various power control systems.
54 mJ
200 V
6 A
.7 ohm
50 W
18 A
NTD3055-150G
NTD3055-150G by Onsemi is a N-channel Power FET with 60V DS breakdown voltage and 27A IDM. Ideal for switching applications, it features a built-in diode, 30mJ EAS rating, and 0.15 ohm RDS(on). Operating in enhancement mode, it has a max power dissipation of 28.8W and temp range of -55 to 175 °C.
30 mJ
9 A
.15 ohm
40 pF
28.8 W
27 A
75 ns
105 ns
NTD32N06LT4G
NTD32N06LT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.028 ohm RDS(ON). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, it has a max power dissipation of 93.75W and can handle up to 90A pulsed drain current.
NTD4302T4G
NTD4302T4G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 28A IDM, and 0.01 ohm RDS. Ideal for SWITCHING applications, it features a built-in DIODE in a SMALL OUTLINE package suitable for surface mount technology. Operating at up to 150°C, this MOSFET offers high power dissipation of 1.04W.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
722 mJ
8.4 A
.01 ohm
1.04 W
28 A
NTP18N06G
NTP18N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.09 ohm RDS(on). It is used for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 48.4W at 175 °C.
61 mJ
15 A
.09 ohm
48.4 W
NTP60N06LG
NTP60N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.016 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
.016 ohm
NTP85N03G
NTP85N03G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 85A ID, and 0.0068 ohm RDS(ON). It is used for switching applications in enhancement mode with 45A IDM. The transistor operates at a max temperature of 150 °C and has a package style of Flange Mount.
85 A
.0068 ohm
80 W
NTD85N02RG
NTD85N02RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 85A, Max Pulsed Drain Current of 192A, and Min DS Breakdown Voltage of 24V. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 78.1W in a SMALL OUTLINE package style.
85 mJ
12 A
.0052 ohm
78.1 W
192 A
NTD85N02RT4G
NTD85N02RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 192A Max Pulsed Drain Current, and 0.0052 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
NTD4302G
NTD4302G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 28A Pulsed Drain Current, and 0.01 ohm Drain-Source On Resistance. This small outline transistor operates in ENHANCEMENT MODE at up to 150 °C, making it ideal for high-power switching circuits.
75 W
NTP2955
NTP2955 by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Features include 42A pulsed drain current, 216mJ avalanche energy rating, and 0.196 ohm max on resistance. Package style is flange mount with through-hole terminals.
216 mJ
2.4 A
.196 ohm
P-CHANNEL
62.5 W
42 A
Other Transistors
NIC9N05TS1
NIC9N05TS1 by Onsemi is a N-CHANNEL FET with SINGLE configuration, suitable for surface mount applications. Features include 150 °C max operating temp, 260°C peak reflow temp, and METAL-OXIDE SEMICONDUCTOR technology. Ideal for power management in various electronic devices.
R-XUUC-N4
4
UNSPECIFIED
UNCASED CHIP
NO LEAD
UPPER
NTD5414NT4G
NTD5414NT4G by Onsemi is an N-channel Power FET with 60V DS breakdown voltage and 24A max drain current. Ideal for switching applications, it features a built-in diode, 55W power dissipation, and operates in enhancement mode. Suitable for surface mount assembly with Gull Wing terminals, this MOSFET has a compact rectangular package style.
86.4 mJ
24 A
.037 ohm
55 W
AEC-Q101
NTMFS4108NT3G
NTMFS4108NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 203A IDM, and 0.0022 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating at 150 °C max temp, it offers high power dissipation of 6.25W in a small outline package.
450 mJ
22 A
13.5 A
.0022 ohm
R-PDSO-F5
5
6.25 W
203 A
FLAT
DUAL
NTD14N03R-001
NTD14N03R-001 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 11.4A Drain Current, and 0.13 ohm On Resistance. With a max power dissipation of 20.8W and operating temperature up to 150 °C, it is ideal for various electronic devices requiring high-performance transistors.
25 V
11.4 A
.13 ohm
20.8 W
NTD14N03R-1G
NTD14N03R-1G by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 25V, max drain current of 11.4A, and max power dissipation of 20.8W. This MOSFET operates in enhancement mode with a max operating temperature of 150 °C, making it suitable for various power control applications.
NTD65N03RT4G
NTD65N03RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 32A, Min DS Breakdown Voltage of 25V, and Max Pulsed Drain Current of 130A. This MOSFET has a PLASTIC/EPOXY package body material and operates in ENHANCEMENT MODE.
71.7 mJ
.0146 ohm
130 A
NTD78N03-35G
NTD78N03-35G by Onsemi is a Power FET with N-CHANNEL configuration and built-in diode, ideal for SWITCHING applications. It features a 25V DS Breakdown Voltage, 210A IDM, and 0.006 ohm Drain-Source Resistance. This METAL-OXIDE SEMICONDUCTOR transistor has a SILICON element and operates in ENHANCEMENT MODE.
722.5 mJ
.006 ohm
210 A
NTD78N03
NTD78N03 by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max pulsed drain current of 210A, min DS breakdown voltage of 25V, and max drain-source on resistance of 0.006 ohm. This MOSFET in small outline package is ideal for high-power enhancement mode operations.
NTB65N02RG
NTB65N02RG by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features 160A IDM and 60mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 62.5W and small outline package style, it offers efficient performance up to 150 °C.
60 mJ
65 A
7.6 A
.0105 ohm
160 A
NTB65N02RT4G
NTB65N02RT4G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 160A IDM, and 0.0105 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 62.5W.
NTLTD7900ZR2G
NTLTD7900ZR2G by Onsemi is an N-CHANNEL FET with 2 elements, built-in diode and resistor. It has a max pulsed drain current of 30A and min DS breakdown voltage of 20V. Ideal for switching applications, this transistor operates in enhancement mode with a max power dissipation of 3.2W at a max temp of 150 °C.
ESD PROTECTED
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
20 V
R-XDSO-N8
8
3.2 W
NTP27N06G
NTP27N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.046 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 88.2W at 175 °C.
109 mJ
80 A
MTP12P10G
MTP12P10G by Onsemi is a P-CHANNEL FET with 100V DS Breakdown Voltage, 12A Max ID, and 0.3 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 28A IDM. Package: PLASTIC/EPOXY, RECTANGULAR shape, THROUGH-HOLE terminals.
LEADFORM OPTIONS ARE AVAILABLE
.3 ohm
MTP23P06VG
MTP23P06VG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 81A IDM, and 0.12 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 175°C max temp. It has a built-in DIODE, 794mJ EAS rating, and comes in RECTANGULAR package style.
794 mJ
23 A
.12 ohm
90 W
81 A
NTD25P03L1G
NTD25P03L1G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 75A IDM, and 0.08 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE at up to 150 °C, it offers high power dissipation of 75W.
200 mJ
25 A
.08 ohm
NTP18N06LG
NTP18N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
.1 ohm
NTP2955G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 62.5 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
NTP45N06G
NTP45N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications due to its 150A Pulsed Drain Current and 125W Power Dissipation capabilities in ENHANCEMENT MODE operation.
125 W
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