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NTP18N06G

Onsemi

NTP18N06G by Onsemi

NTP18N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.09 ohm RDS(on). It is used for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 48.4W at 175 °C.

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Vyrian

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

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Atlantic Semiconductor

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LWI Electronics Inc

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AZTECH Wire

Italy . 255 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

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Overview

Discover the power and reliability of the NTP18N06G by Onsemi, a leading manufacturer in the field of Power Field Effect Transistors. Ideal for switching applications, this N-CHANNEL transistor offers a minimum DS Breakdown Voltage of 60V and a maximum Drain Current of 15A. With a built-in diode and an operating mode of Enhancement Mode, this transistor provides efficient and high-performance functionality. Whether you're working on industrial automation, consumer electronics, or automotive systems, the NTP18N06G delivers the quality and value you need to bring your projects to life. Choose Onsemi for superior technology and trusted performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the FET lightweight and resistant to physical damage, increasing its durability during operation.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are known for their higher electron mobility and faster switching speed, making this product suitable for high-speed switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient freewheeling and protection against reverse voltage spikes, enhancing the reliability of the switching operation.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET provides high efficiency and fast response times, making it ideal for controlling power flow in various circuits.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this FET can handle higher voltages, ensuring reliable operation in circuits with varying power requirements.

Package Shape: RECTANGULAR

The rectangular package shape offers efficient space utilization and ease of mounting, making it suitable for compact designs and dense circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, making installation and maintenance of the FET straightforward for users.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for easy control of the FET's conductivity, enabling precise switching and modulation of power flow in the circuit.

Maximum Pulsed Drain Current (IDM): 45 A

With a high pulsed drain current rating of 45A, this FET can handle brief surges of power without overheating or damage, ensuring reliable performance in dynamic applications.

Avalanche Energy Rating (EAS): 61 mJ

The high avalanche energy rating of 61mJ indicates that this FET can withstand sudden voltage spikes or power surges, protecting the device and circuit from damage.

Maximum Drain Current (Abs) (ID): 15 A

The maximum drain current rating of 15A enables this FET to handle high current loads with ease, ensuring stable operation in demanding applications.

Maximum Power Dissipation (Abs): 48.4 W

With a maximum power dissipation of 48.4W, this FET can effectively dissipate heat generated during operation, preventing overheating and ensuring long-term reliability.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure mechanical support and thermal management, making it suitable for high-power applications that require efficient heat dissipation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides low ON-resistance and high switching speed, enhancing the overall performance and efficiency of this FET in power control applications.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this FET can withstand high-temperature environments without performance degradation, ensuring reliable operation in harsh conditions.

Transistor Element Material: SILICON

Silicon transistors offer high reliability and temperature stability, making this FET suitable for long-term use in industrial and automotive applications where durability is essential.

Terminal Finish: Tin (Sn)

The tin terminal finish provides corrosion resistance and reliable solder connections, ensuring consistent performance and longevity of the FET in various operating environments.

Maximum Drain-Source On Resistance: 0.09 ohm

With a low ON-resistance of 0.09 ohm, this FET minimizes power loss and heat generation during operation, resulting in higher efficiency and improved thermal management.

Terminal Position: SINGLE

The single terminal position simplifies circuit design and connection, making it easy to integrate this FET into existing systems or new projects.

Case Connection: DRAIN

The drain case connection allows for efficient heat dissipation and electrical isolation, enhancing the overall reliability and performance of the FET in demanding applications.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures reliable solder joints and prevents damage to the FET during the manufacturing or rework process, enhancing the product's quality and durability.

Technical Specifications

Power Field Effect Transistors (FET) NTP18N06G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

61 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

15 A

Maximum Drain Current (ID):

15 A

Maximum Drain-Source On Resistance:

.09 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

45 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTP18N06G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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