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IRFP250NPBF

Infineon Technologies

IRFP250NPBF by Infineon Technologies

IRFP250NPBF by Infineon is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A IDM, 315mJ EAS, and 0.075ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 214W and can withstand temperatures from -55 to 150 °C.

Median Price

$1.920

Lifecycle Status

Suppliers In-Stock

40

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 2,000 parts In-Stock

1+ parts

$0.415

100+ parts

$0.394

1k+ parts

$0.394

10k+ parts

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2,000

$0.415

$0.394

$0.394

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Chip1Stop

Japan . 564 parts In-Stock

1+ parts

$1.460

100+ parts

-

1k+ parts

-

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564

$1.460

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Bürklin Elektronik

Germany . 5,224 parts In-Stock

1+ parts

$1.740

100+ parts

$1.360

1k+ parts

$1.190

10k+ parts

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5,224

$1.740

$1.360

$1.190

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Arrow

USA . 64,843 parts In-Stock

1+ parts

$2.099

100+ parts

$1.491

1k+ parts

$1.461

10k+ parts

$1.428

64,843

$2.099

$1.491

$1.461

$1.428

Farnell

UK . 949 parts In-Stock

1+ parts

$2.790

100+ parts

$1.400

1k+ parts

$1.070

10k+ parts

$1.060

949

$2.790

$1.400

$1.070

$1.060

Element14

Singapore . 901 parts In-Stock

1+ parts

$2.878

100+ parts

$1.609

1k+ parts

$1.520

10k+ parts

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901

$2.878

$1.609

$1.520

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Newark

USA . 3,245 parts In-Stock

1+ parts

$3.780

100+ parts

$1.930

1k+ parts

$1.660

10k+ parts

$1.490

3,245

$3.780

$1.930

$1.660

$1.490

Mouser Electronics

USA . 3,907 parts In-Stock

1+ parts

$4.590

100+ parts

$2.240

1k+ parts

$1.880

10k+ parts

$1.630

3,907

$4.590

$2.240

$1.880

$1.630

Verical

USA . 64,836 parts In-Stock

1+ parts

-

100+ parts

$1.496

1k+ parts

$1.466

10k+ parts

$1.433

64,836

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$1.496

$1.466

$1.433

Rochester

USA . 6,159 parts In-Stock

1+ parts

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$1.300

1k+ parts

$1.160

10k+ parts

$1.100

6,159

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$1.160

$1.100

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 923 parts In-Stock

1+ parts

$0.394

100+ parts

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1k+ parts

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923

$0.394

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Ozdisan Elektronik

Türkiye . 2,281 parts In-Stock

1+ parts

$0.526

100+ parts

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2,281

$0.526

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Maritex

Poland . 4 parts In-Stock

1+ parts

$1.060

100+ parts

$0.604

1k+ parts

$0.515

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4

$1.060

$0.604

$0.515

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Greenchips

USA . 225 parts In-Stock

1+ parts

$1.232

100+ parts

$1.173

1k+ parts

$1.117

10k+ parts

$1.008

225

$1.232

$1.173

$1.117

$1.008

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$1.472

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100

$1.472

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Component Electronics Inc.

Canada . 320 parts In-Stock

1+ parts

$2.310

100+ parts

$1.730

1k+ parts

$1.500

10k+ parts

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320

$2.310

$1.730

$1.500

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Bristol Electronics

USA . 36 parts In-Stock

1+ parts

$2.353

100+ parts

$1.177

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36

$2.353

$1.177

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Voyager Components

USA . 55 parts In-Stock

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$3.605

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$3.605

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Chip Stock

USA . 29,343 parts In-Stock

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Cyclops Electronics Ltd

UK . 18,000 parts In-Stock

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NAC Semi

USA . 9,200 parts In-Stock

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$3.640

10k+ parts

$3.310

9,200

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$3.310

Vyrian

USA . 6,373 parts In-Stock

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Euro-Tech

UK . 1,167 parts In-Stock

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IBS Electronics

USA . 575 parts In-Stock

1+ parts

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$1.501

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$1.038

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575

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$1.038

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Amar Radio Corporation

India . 300 parts In-Stock

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300

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EZ Electronic Parts

Israel . 231 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 225 parts In-Stock

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225

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Rutronik

Germany . 200 parts In-Stock

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$0.898

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$0.734

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200

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$0.898

$0.734

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Rebound Electronics

UK . 75 parts In-Stock

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75

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Micros

Poland . 57 parts In-Stock

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ComSIT Distribution GmbH

Germany . 57 parts In-Stock

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Huijzer Components

Netherlands . 35 parts In-Stock

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35

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Legend Electronics Inc.

USA . 31 parts In-Stock

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31

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LWI Electronics Inc

India . 25 parts In-Stock

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25

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Holdelec - ElecDif-Pro

France . 25 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 21 parts In-Stock

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Tech-Mark Corp

USA . 21 parts In-Stock

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Dan-Mar Components

USA . 21 parts In-Stock

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Sogenti Electronics

Canada . 10 parts In-Stock

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10

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Martec Srl

Italy . 4 parts In-Stock

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 6,011 parts In-Stock

1+ parts

$0.353

100+ parts

-

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6,011

$0.353

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Corphita

USA . 928 parts In-Stock

1+ parts

$0.374

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928

$0.374

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.415

100+ parts

$0.394

1k+ parts

$0.394

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2,000

$0.415

$0.394

$0.394

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Corohmni

South Africa . 287 parts In-Stock

1+ parts

$0.419

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287

$0.419

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Modulus Dynamics

Lithuania . 12,742 parts In-Stock

1+ parts

$1.314

100+ parts

$1.261

1k+ parts

$1.209

10k+ parts

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12,742

$1.314

$1.261

$1.209

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$1.443

100+ parts

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1k+ parts

$1.385

10k+ parts

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100

$1.443

-

$1.385

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Argo Parts USA

USA . 978 parts In-Stock

1+ parts

$1.472

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978

$1.472

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Aztec Data Supply Inc.

USA . 3,758 parts In-Stock

1+ parts

$1.657

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3,758

$1.657

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Continental Prestige Electronics

USA . 1,817 parts In-Stock

1+ parts

$2.990

100+ parts

$1.680

1k+ parts

$1.410

10k+ parts

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1,817

$2.990

$1.680

$1.410

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Metaverse IC Inc.

Canada . 75,474 parts In-Stock

1+ parts

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75,474

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Eastek

USA . 66,800 parts In-Stock

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66,800

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Infinite Electronics LLP (Excess)

. 30,025 parts In-Stock

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30,025

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Perfect Parts

USA . 29,200 parts In-Stock

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29,200

-

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iodParts Technologies Inc.

India . 22,180 parts In-Stock

1+ parts

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$0.752

10k+ parts

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22,180

-

-

$0.752

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Lixinc

USA . 19,666 parts In-Stock

1+ parts

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100+ parts

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19,666

-

-

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Robosynatics

Brazil . 15,949 parts In-Stock

1+ parts

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100+ parts

$1.703

1k+ parts

$1.668

10k+ parts

$1.668

15,949

-

$1.703

$1.668

$1.668

Lucentia Tech

USA . 15,949 parts In-Stock

1+ parts

-

100+ parts

$1.703

1k+ parts

$1.668

10k+ parts

$1.668

15,949

-

$1.703

$1.668

$1.668

Authorized Procurement Solutions

USA . 15,000 parts In-Stock

1+ parts

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100+ parts

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15,000

-

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GreenTree Electronics

Israel . 15,000 parts In-Stock

1+ parts

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15,000

-

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Formix International (Excess)

India . 15,000 parts In-Stock

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15,000

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QUARKTWIN TECHNOLOGY LTD

USA . 12,989 parts In-Stock

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12,989

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A-Z Elektronik GmbH

Germany . 6,317 parts In-Stock

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6,317

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Kepictronics

USA . 5,500 parts In-Stock

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5,500

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Alle Elektronik GmbH

Germany . 4,211 parts In-Stock

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4,211

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Glotronic Ltd.

UK . 2,042 parts In-Stock

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2,042

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Epart123

USA . 2,000 parts In-Stock

1+ parts

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$0.725

10k+ parts

$0.725

2,000

-

-

$0.725

$0.725

S.R.D Solutions

India . 1,000 parts In-Stock

1+ parts

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1,000

-

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Overview

Unlock the power of innovation with the IRFP250NPBF by Infineon Technologies. As a leader in the semiconductor industry, Infineon Technologies delivers top-quality Power Field Effect Transistors that are designed to excel in various switching applications. With a built-in diode and a 200V DS breakdown voltage, this N-CHANNEL transistor offers unmatched performance and reliability. Experience enhanced efficiency and superior functionality with this product, making it an essential component for your next project. Elevate your designs with the IRFP250NPBF and discover the difference that quality engineering can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and protection for the transistor, making it long-lasting and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high efficiency and faster switching speeds, making this product suitable for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and protects the transistor from voltage spikes, enhancing its overall performance.

Transistor Application: SWITCHING

Designed for switching applications, this FET can efficiently control the flow of current in electronic circuits.

Minimum DS Breakdown Voltage: 200 V

High breakdown voltage ensures safe operation in high voltage applications, providing reliable performance under different conditions.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration into various circuit designs, making it versatile and space-efficient.

Terminal Form: THROUGH-HOLE

Through-hole terminals facilitate easy soldering and secure connection to the circuit board, ensuring stable performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control of the transistor, making it suitable for a wide range of applications.

Maximum Pulsed Drain Current (IDM): 120 A

High pulsed drain current rating ensures the transistor can handle sudden spikes in current, making it reliable in demanding applications.

Avalanche Energy Rating (EAS): 315 mJ

A high avalanche energy rating indicates the FET can withstand voltage surges without damage, increasing the overall robustness of the product.

Maximum Drain Current (Abs) (ID): 30 A

High drain current rating allows for efficient current flow in the circuit, ensuring reliable performance under varying load conditions.

Maximum Power Dissipation (Abs): 214 W

High power dissipation rating indicates the transistor can handle heat dissipation effectively, preventing overheating and ensuring long-term operation.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides easy mounting and secure attachment to heatsinks, enhancing thermal performance and reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and low power consumption, making this FET a good choice for energy-efficient applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance allows for reliable operation in elevated temperature environments, ensuring stable performance under varying conditions.

Transistor Element Material: SILICON

Silicon-based transistor element material ensures high performance and reliability, making this FET suitable for a wide range of applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature rating allows for operation in cold environments, making this FET versatile and suitable for different temperature conditions.

Terminal Finish: MATTE TIN OVER NICKEL

Matte tin over nickel terminal finish provides corrosion resistance and secure electrical contact, ensuring long-term reliability in various operating conditions.

Maximum Drain Current (ID): 30 A

High drain current rating ensures efficient current flow in the circuit, allowing for reliable operation under varying load conditions.

Maximum Drain-Source On Resistance: 0.075 ohm

Low drain-source on resistance results in minimal power loss and high efficiency, making this FET suitable for high-performance applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and installation, ensuring easy integration into different electronic systems.

Case Connection: DRAIN

Drain case connection allows for efficient heat dissipation and thermal management, ensuring reliable performance even in high-power applications.

Technical Specifications

Power Field Effect Transistors (FET) IRFP250NPBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (EAS):

315 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

30 A

Maximum Drain Current (ID):

30 A

Maximum Drain-Source On Resistance:

.075 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

120 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFP250NPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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