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IRFP250R

Harris Semiconductor

IRFP250R by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Minimum DS Breakdown Voltage: 200 V; Terminal Form: THROUGH-HOLE;

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Sea View Technologies

USA . 1,707 parts In-Stock

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Bristol Electronics

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LittleDiode

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Inventory MP

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Supply Digital

USA . 1,231 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) IRFP250R attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Harris Semiconductor

Specs

Avalanche Energy Rating (EAS):

810 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

33 A

Maximum Drain Current (ID):

33 A

Maximum Drain-Source On Resistance:

.085 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

180 W

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

130 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

220 ns

Maximum Turn On Time (ton):

210 ns

Trade Compliance

IRFP250R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

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