Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
FDS6675BZ by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage and 55A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package. Operating in ENHANCEMENT MODE, it offers low 0.013 ohm Drain-Source On Resistance and can handle up to 2.5W power dissipation.
Median Price
$0.501
Lifecycle Status
Suppliers In-Stock
40
In-Stock Inventory
1k+
Adafruit Industries
1+ parts
$1.089
100+ parts
$1.034
1k+ parts
10k+ parts
-
Mouser Electronics
$1.420
$0.536
DigiKey
$0.592
$0.462
Rochester
$0.405
$0.336
$0.300
Verical
$0.420
$0.375
Element14
$0.439
EBV Elektronik
Master Electronics
$0.534
$0.406
$0.384
Farnell
$0.453
Newark
$0.654
Arrow
$0.475
$0.382
$0.324
Chip1Stop
Flip Electronics (Authorized)
RS (Exports)
$0.319
Digiode
$0.315
Electronics Source Co.
Nova Conductors
$0.456
Bristol Electronics
$0.863
$0.224
Maritex
$0.903
$0.476
$0.371
TME
$1.340
$0.586
$0.430
Component Electronics Inc.
$3.850
$2.880
$2.500
Ozdisan Elektronik
$57.130
Chip Stock
Cyclops Electronics Ltd
Vyrian
Semtec, LLC
Flip Electronics
NAC Semi
$0.716
IBS Electronics
$0.692
$0.491
$0.443
ComSIT Distribution GmbH
Prism Electronics
LIBRA Elektronik GmbH
Dan-Mar Components
Conversion2
ACDS - Activité Composants Distribution Service
Holdelec - ElecDif-Pro
Sensible Micro Corp
Speed Components Ltd
Rebound Electronics
Atlantic Semiconductor
Ampacity Inc.
$0.252
Decca Corp
$0.247
$0.244
Corohmni
$0.283
Corphita
$0.299
Argo Parts USA
$0.409
$0.397
Netroflash
$0.434
$0.425
Semicontronic
$0.550
Benley Electronics
$0.750
Continental Prestige Electronics
$0.821
$0.489
$0.309
Aztec Data Supply Inc.
$0.956
Advanced Electronics
Perfect Parts
RC Electronics
$0.390
$0.380
Kepictronics
Glotronic Ltd.
Robosynatics
$1.903
$1.864
Lucentia Tech
Speed Components Ltd (Excess)
iodParts Technologies Inc.
GreenTree Electronics
SupplyDigital Components
Allen Electronics Distributors
Problanco Electronics
Cyclops Electronics Ltd (Excess)
TANS Electronics
Kulean Microsystems
Futuretech Components
Authorized Procurement Solutions
Assy Fe
UHIMA Technologies
Supply Digital
The use of plastic/epoxy material in the package body provides durability and resistance to moisture, making this FET suitable for a variety of environments.
P-channel FETs are known for their low on-state resistance and high input impedance, making them efficient for power switching applications.
The built-in diode helps to protect the circuit from voltage spikes and reverse current flow, enhancing the reliability of the switching operation.
Designed specifically for switching applications, this FET offers fast switching speeds and low power dissipation, making it ideal for power control circuits.
The surface mount feature allows for easy and compact installation on PCBs, saving space and simplifying the assembly process.
With a minimum breakdown voltage of 30V, this FET can handle higher voltages, making it suitable for a wide range of power applications.
The rectangular package shape offers a standardized form factor that is easy to handle and mount on circuit boards.
The gull-wing terminal form provides a reliable connection and allows for easy soldering, ensuring a secure electrical connection.
Enhancement mode FETs offer better control over the switching operation and lower power consumption, making them ideal for efficient power management.
With a high pulsed drain current rating of 55A, this FET can handle short duration high power loads, suitable for applications requiring high current switching.
The maximum continuous drain current of 11A ensures reliable performance under normal operating conditions, meeting the power requirements of the application.
The low power dissipation rating of 2.5W enhances the efficiency of the FET and helps in reducing heat buildup, ensuring reliable operation.
The small outline package style saves space on the PCB, making it suitable for compact electronic devices and applications with limited board space.
Metal-oxide semiconductor technology offers high reliability and stable performance, making this FET suitable for industrial and automotive applications.
With a maximum operating temperature of 150°C, this FET can withstand high-temperature environments, ensuring reliable performance in demanding conditions.
Silicon transistor elements offer high efficiency and low leakage current, making this FET suitable for power switching applications where reliability is crucial.
The fast turn-on time of 26ns ensures quick response in switching operations, reducing power losses and enhancing overall efficiency.
With a minimum operating temperature of -55°C, this FET can operate in extremely cold environments, making it suitable for a wide range of temperature conditions.
The maximum turn-off time of 300ns ensures fast switching transitions, reducing the switching losses and improving the efficiency of the power circuit.
The matte tin terminal finish provides corrosion resistance and ensures a reliable connection, making this FET suitable for long-term use in various environmental conditions.
The low drain-source on-resistance of 0.013 ohm minimizes power losses and heat dissipation, improving the efficiency of the power switching operation.
The dual terminal position provides flexibility in circuit design and allows for easy integration into different types of electronic systems.
The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and reliability during the assembly process, reducing the risk of solder joint failure.
The peak reflow temperature of 260°C ensures proper soldering of the FET onto the PCB, providing a reliable electrical connection for optimal performance.
The maximum feedback capacitance of 500pF ensures stable operation and reduces the risk of oscillations in the circuit, enhancing the overall reliability of the power switching system.
Power Field Effect Transistors (FET) FDS6675BZ attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Maximum Turn Off Time (toff):
Maximum Turn On Time (ton):
FDS6675BZ Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
M24308/2-1F
Esterline Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Option-1: HOLE .115-.125; Mounting Type: CABLE AND PANEL; Mating Contact Finish: NOT SPECIFIED;
AT90CAN128-16AU
Microchip Technology
AT90CAN128-16AU by Microchip Technology is a microcontroller with 8-bit data RAM and 16-bit address bus width. It operates at a max clock frequency of 16 MHz, making it suitable for industrial applications requiring low power mode and connectivity options like CAN, SPI, and USART. With 53 I/O lines and 8-channel 10-bit ADCs, this microcontroller offers versatile peripheral support for various embedded systems.
C1206C104M5RACTU
KEMET Corporation
KEMET C1206C104M5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±20% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
SMBJ18CA
STMicroelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Pro-an Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
CL31B104KBCNNNC
Samsung Electro-mechanics
Samsung Electro-mechanics CL31B104KBCNNNC is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It features X7R temperature characteristics, -55 to 125 °C operating range, and compact SMT package style. Ideal for applications requiring high reliability in compact electronic devices.
BAV99
Vishay Intertechnology
Vishay Intertechnology's BAV99 diode features a max forward voltage of 1.3V and a max output current of 0.15A, making it ideal for rectification applications. With a small outline package style and dual terminal position, this series-connected diode is designed for surface mount usage in various electronic circuits with an operating temperature range from -55°C to 150°C.
Rectron
ESD5Z5.0T1G
Onsemi
ESD5Z5.0T1G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 5V reverse test voltage and 174W peak power dissipation. It is used for transient suppression in electronic circuits, meeting IEC-61000-4-2, 4-4 standards and UL recognized for reliability.
BAV99+
Multicomp Pro
BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.
1552200253
Molex
WIRE AND CABLE;
2N2222A
Bytesonic Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
RN41N-I/RM
Microchip Technology's RN41N-I/RM is a telecom IC with 35 terminals, operating from -40 to 85°C. It has a supply voltage of 3.3V and is surface mountable in industrial applications. The package style is rectangular, measuring 13.2mm x 20.1mm with a seated height of 2.2mm, suitable for telecom interface functions.
American Power Devices
ULN2803A
NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;
Raytheon Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;
M39029/58-360
Fct Electronic
CONNECTOR ACCESSORY; IEC Conformity: NO; Alternate Contact Sources: MILITARY; MIL Conformity: YES; Contact Gender: MALE; MIL-Connector Accessory Name: CONTACT;
ABS10-32.768KHZ-T
Abracon
Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.
LM358N
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
2N7002DW
Diodes Incorporated
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Tin/Lead (Sn/Pb); Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
FDS4675
FDS4675 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and ID of 11A, with 0.013 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 175 °C.
IRFP260NPBF
Infineon Technologies
IRFP260NPBF by Infineon is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a 300W Power Dissipation, -55 to 175 °C Operating Temp, and 0.04 ohm On Resistance.
FDT439N
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Qualification: Not Qualified; Transistor Element Material: SILICON;
STD12NF06LT4
STD12NF06LT4 by STMicroelectronics is an N-channel power FET with a 60V DS breakdown voltage and 48A max pulsed drain current. It is used for switching applications, operates in enhancement mode, and has a built-in diode. The transistor features a 0.12 ohm max drain-source resistance and can handle up to 30W of power dissipation.
IRFL9014PBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G3; No. of Terminals: 3; No. of Elements: 1;
RFD14N05LSM9A
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Package Style (Meter): SMALL OUTLINE; JEDEC-95 Code: TO-252AA;
FDMS86101A
FDMS86101A by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 180A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.008 ohm RDS(on), and 104W Pdiss. Suitable for surface mount with 5 terminals in a RECTANGULAR package style.
SI4532DY
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 30 V;
BSC340N08NS3GATMA1
Infineon's BSC340N08NS3GATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 92A IDM, 20mJ EAS, and 0.034 ohm RDS(on). Operating from -55 to 150 °C, this MOSFET has a max power dissipation of 32W in a small outline package.
2N7002W
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; JESD-609 Code: e0; No. of Elements: 1;
PMV20ENR
NXP Semiconductors
PMV20ENR by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 7.6A and power dissipation of 6.94W in enhancement mode. Ideal for applications requiring high-power handling, it operates at temperatures up to 150°C and features surface mount configuration for easy installation.
FDS6982AS
FDS6982AS by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 ELEMENTS WITH BUILT-IN DIODE in a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE. With a Max Drain Current of 8.6A and 0.0135 ohm On Resistance, it offers efficient performance up to 150°C.
BSC016N06NSATMA1
Infineon's BSC016N06NSATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max IDM of 400A and EAS of 380mJ, ensuring efficient operation. With a drain-source on resistance of 0.0016 ohm and operating temperature up to 150°C, it offers high performance in a small outline package.
IRFZ44NS
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; No. of Elements: 1; Package Shape: RECTANGULAR;
DMP4051LK3-13
DMP4051LK3-13 by Diodes Inc. is a P-CHANNEL FET with 40V DS Breakdown Voltage, 28.9A IDM, and 0.051 ohm RDS(ON). Ideal for SWITCHING applications in small outline packages, operating at up to 150°C with single terminal position and built-in diode.
FDD4243-F085
FDD4243-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 24A, 0.044 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a package style of SMALL OUTLINE and operating temperature range from -55 to 175 °C, it meets AEC-Q101 standards for automotive use.
IRF640PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 18 A; Terminal Form: THROUGH-HOLE;
NDT3055
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain-Source On Resistance: .1 ohm; Package Body Material: PLASTIC/EPOXY;
FDS2582
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum DS Breakdown Voltage: 150 V; Maximum Drain Current (Abs) (ID): 4.1 A;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
AO4407A
Alpha Omega
AO4407A by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 12A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.013 ohm On Resistance, and operates in ENHANCEMENT MODE at up to 150°C.
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .0135 ohm; Package Style (Meter): SMALL OUTLINE;
FDS6680A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
FDS6680A by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 50A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.5W and can handle up to 12.5A drain current.
FDS6890A
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Pulsed Drain Current (IDM): 20 A;
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 7.5 A; Terminal Finish: MATTE TIN;
FDS6982AS_NL
Fairchild Semiconductor's FDS6982AS_NL is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 8.6A Max Drain Current. Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE up to 150°C.
FDS6875
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDS6375
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G8;
FDS6375 by Onsemi is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and ID of 8A, with 0.024 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE, suitable for high-power switching circuits.
FDS6690A
FDS6690A by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 50A and EAS of 96mJ, making it suitable for high-power operations. With a compact RECTANGULAR package and GULL WING terminals, it offers efficient performance in ENHANCEMENT MODE operation.
FDS6910
FDS6910 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 2 ELEMENTS WITH BUILT-IN DIODE in a PLASTIC/EPOXY package, it offers 20A Max Pulsed Drain Current and 0.013 ohm Max Drain-Source Resistance. Suitable for ENHANCEMENT MODE operation at temperatures ranging from -55 to 150 °C.
FDS6875_NL
FDS6875_NL by Fairchild Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage, 6A Max ID, and 0.03 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, this transistor has 2 elements with built-in diode in a GULL WING package.
FDS6680A-NBBI005A
Fairchild Semiconductor's FDS6680A-NBBI005A is a N-CHANNEL Power FET with 12.5A max drain current and 2.5W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, operating at up to 150°C with matte tin finish for enhanced thermal performance.
FDS6890A_NL
FDS6890A_NL by Fairchild Semiconductor is a N-CHANNEL Power FET for SWITCHING applications. Features include 20V DS Breakdown Voltage, 7.5A Drain Current, and 0.034 ohm On Resistance. With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic devices.
FDS6690AS
FDS6690AS by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 10A, 0.012 ohm On Resistance, and 2.5W Power Dissipation in a SMALL OUTLINE package. Operating b/w -55 to 150 °C, it offers fast switching times of 40ns turn on and 43ns turn off for efficient performance.
FDS6670A
FDS6670A by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 13A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 50A Pulsed Drain Current, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 2.5W and can withstand temperatures up to 150°C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .008 ohm;
FDS6672A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; Moisture Sensitivity Level (MSL): 1;
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