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IRFP4568PBF

Infineon Technologies

IRFP4568PBF by Infineon Technologies

Infineon's IRFP4568PBF is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 684A IDM and 0.0059 ohm RDS(on), it operates in ENHANCEMENT MODE up to 175°C. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance in high-power circuits.

Median Price

$6.575

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1 parts In-Stock

1+ parts

$4.330

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1

$4.330

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Chip1Stop

Japan . 4,401 parts In-Stock

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$5.850

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$3.780

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Element14

Singapore . 877 parts In-Stock

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$7.300

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$5.890

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Mouser Electronics

USA . 3,371 parts In-Stock

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$7.520

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$5.670

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$4.490

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$4.210

3,371

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$5.670

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$4.210

Farnell

UK . 484 parts In-Stock

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$7.660

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Arrow

USA . 1,200 parts In-Stock

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$7.960

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$4.197

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$3.916

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$4.197

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$3.722

Verical

USA . 6,321 parts In-Stock

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$3.520

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Rochester

USA . 16 parts In-Stock

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$2.450

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Maritex

Poland . 255 parts In-Stock

1+ parts

$2.534

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$1.647

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$1.511

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255

$2.534

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Digiode

USA . 440 parts In-Stock

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$4.854

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TME

Poland . 117 parts In-Stock

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Voyager Components

USA . 1 parts In-Stock

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$5.668

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$5.668

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$5.668

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$5.668

1

$5.668

$5.668

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$5.668

Nova Conductors

Japan . 55 parts In-Stock

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$6.445

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Flip Electronics

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Chip Stock

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Cyclops Electronics Ltd

UK . 27,610 parts In-Stock

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IBS Electronics

USA . 18,400 parts In-Stock

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Vyrian

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Magnum Semiconductors LLP

India . 1,000 parts In-Stock

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Infinite Electronics LLP

India . 800 parts In-Stock

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Sensible Micro Corp

USA . 762 parts In-Stock

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Rutronik

Germany . 725 parts In-Stock

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Prism Electronics

USA . 199 parts In-Stock

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ComSIT Distribution GmbH

Germany . 190 parts In-Stock

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Schukat

Germany . 150 parts In-Stock

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South Electronics

USA . 115 parts In-Stock

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Goldney Electronics S.L.

Spain . 100 parts In-Stock

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LWI Electronics Inc

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Speed Components Ltd

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Bristol Electronics

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Martec Srl

Italy . 8 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 8,505 parts In-Stock

1+ parts

$0.676

100+ parts

$0.649

1k+ parts

$0.622

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8,505

$0.676

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Aztec Data Supply Inc.

USA . 1,359 parts In-Stock

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$0.921

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Corohmni

South Africa . 189 parts In-Stock

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$1.345

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$1.545

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$1.406

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$1.267

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$1.545

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Semicontronic

India . 2,404 parts In-Stock

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$1.780

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$1.736

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$1.727

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2,404

$1.780

$1.736

$1.727

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Ampacity Inc.

Singapore . 2,334 parts In-Stock

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$1.780

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Corphita

USA . 49 parts In-Stock

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$4.599

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Component Stockers USA

USA . 11,920 parts In-Stock

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$6.250

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$1.910

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$1.760

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11,920

$6.250

$1.910

$1.760

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Continental Prestige Electronics

USA . 185 parts In-Stock

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$7.920

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$5.390

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$7.920

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Microchip USA

USA . 5,527 parts In-Stock

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$23.212

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GreenTree Electronics

Israel . 127,600 parts In-Stock

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Infinite Electronics LLP (Excess)

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Perfect Parts

USA . 43,588 parts In-Stock

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Futuretech Components

Singapore . 17,091 parts In-Stock

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Formix International (Excess)

India . 10,000 parts In-Stock

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Lixinc

USA . 7,484 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,831 parts In-Stock

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5,831

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Robosynatics

Brazil . 4,431 parts In-Stock

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$1.622

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$1.589

10k+ parts

$1.589

4,431

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$1.622

$1.589

$1.589

Lucentia Tech

USA . 4,431 parts In-Stock

1+ parts

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$1.622

1k+ parts

$1.589

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$1.589

4,431

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$1.589

$1.589

Argo Parts USA

USA . 4,027 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,887 parts In-Stock

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3,887

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iodParts Technologies Inc.

India . 2,956 parts In-Stock

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$2.794

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$2.484

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2,956

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$2.794

$2.484

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S.R.D Solutions

India . 2,500 parts In-Stock

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Assy Fe

Spain . 10 parts In-Stock

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10

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Overview

Discover the superior performance and reliability of the IRFP4568PBF power FET by Infineon Technologies. With a reputation for excellence in semiconductor technology, Infineon brings you a high-quality N-CHANNEL transistor with a built-in diode, perfect for switching applications. This product boasts a maximum pulsing drain current of 684A, ensuring efficient operation even in the most demanding scenarios. Trust in Infineon's expertise and elevate your projects with the unmatched value and benefits of the IRFP4568PBF.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides durability and good thermal conductivity, ensuring the product's longevity and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high efficiency and low on-resistance, making this product suitable for various switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies the design and protects the circuit from reverse current flow, enhancing the overall performance of the product.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and low power consumption, making it ideal for efficient power management.

Minimum DS Breakdown Voltage: 150 V

With a minimum breakdown voltage of 150V, this FET can handle high voltages, ensuring reliable operation in various power applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting on circuit boards, saving space and facilitating efficient PCB layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, ensuring reliable electrical connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers easy control of the FET, allowing for precise switching and efficient power management.

Maximum Pulsed Drain Current (IDM): 684 A

High maximum pulsed drain current rating allows this FET to handle large current spikes, making it suitable for high-power applications.

Avalanche Energy Rating (EAS): 763 mJ

High avalanche energy rating ensures the FET can withstand high-energy transients, increasing its reliability in demanding environments.

Maximum Drain Current (Abs) (ID): 171 A

With a maximum drain current rating of 171A, this FET can handle high current loads, making it suitable for power-hungry applications.

No. of Terminals: 3

3 terminals provide easy connectivity and control of the FET, simplifying the circuit design.

Maximum Power Dissipation (Abs): 517 W

High maximum power dissipation rating ensures the FET can handle high power levels without overheating, increasing its reliability in demanding conditions.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy mounting and secure attachment to heat sinks, improving heat dissipation and enhancing overall performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and fast switching speeds, making this FET suitable for demanding power applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature rating of 175°C ensures the FET can operate reliably in high-temperature environments, increasing its versatility.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making this FET suitable for long-term operation in various power applications.

Terminal Finish: MATTE TIN OVER NICKEL

Matte tin over nickel finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections and longevity.

Maximum Drain-Source On Resistance: 0.0059 ohm

Low maximum drain-source on-resistance minimizes power loss and improves efficiency, making this FET suitable for high-efficiency power management.

Terminal Position: SINGLE

Single terminal position simplifies the installation and connection of the FET, reducing the chances of error during assembly.

Case Connection: DRAIN

Drain connection allows for easy integration into the circuit and effective control of the FET, enhancing overall performance and reliability.

Technical Specifications

Power Field Effect Transistors (FET) IRFP4568PBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

763 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (Abs) (ID):

171 A

Maximum Drain Current (ID):

171 A

Maximum Drain-Source On Resistance:

.0059 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

684 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFP4568PBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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