Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Finish: MATTE TIN; No. of Elements: 1;
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DigiKey
$2.320
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Rochester
$0.732
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Future Electronics
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Arrow
Verical
$0.579
RS (Exports)
$0.413
Chip1Stop
$0.499
Farnell
$0.455
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$0.441
Digiode
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Nova Conductors
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Maritex
$1.251
Component Electronics Inc.
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IBS Electronics
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Vyrian
Chip Stock
Rutronik
$0.567
NAC Semi
$0.653
Component Sense
Goldney Electronics S.L.
Cyclops Electronics Ltd
Bristol Electronics
Atlantic Semiconductor
Fibra_Brandt Electronic GMBH
Semicontronic
$0.351
$0.342
$0.340
Ampacity Inc.
Corphita
$0.554
Argo Parts USA
$0.810
Netroflash
Modulus Dynamics
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$0.814
Corohmni
Advanced Electronics
Continental Prestige Electronics
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$1.030
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Aztec Data Supply Inc.
$1.883
Microchip USA
$4.665
Eastek
RC Electronics
$0.880
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$0.780
Perfect Parts
Infinite Electronics LLP (Excess)
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$0.867
Lucentia Tech
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Power Field Effect Transistors (FET) IRF7493TRPBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier
Configuration:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
Operating Mode:
Maximum Operating Temperature:
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
Terminal Finish:
Maximum Time At Peak Reflow Temperature (s):
IRF7493TRPBF Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
LL4148-GS08
Vishay Intertechnology
The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.
LM78L05ACMX/NOPB
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
SS14
Vishay Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Transistor & Electronic
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
M39029/58-360
Itt Cannon
CONNECTOR ACCESSORY; Alternate Contacts: 030-2042-000; DIN Conformity: NO; Contact Gender: MALE; Terminal Type: WIRE; MIL-Connector Accessory Name: CONTACT;
BSS138W-7-F
Diodes Incorporated
Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
LL4148
Micronas Semiconductor Holding Ag
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;
BAV99
Zetex Plc
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
FDLL4148
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
MBRS130LT3G
Onsemi
MBRS130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.445V. It operates b/w -65 to 125°C, has a reverse test voltage of 30V, and is ideal for power applications due to its small outline package style.
Kec
1N4148
Gulf Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Microchip Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;
2N7002
Silicon Standard
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;
M24308/2-1F
Cristek Interconnects
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Maximum Reverse Recovery Time: .004 us; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V;
LM358MX
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
Motorola
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; JESD-609 Code: e0;
LM555CMX
Texas Instruments
LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.
IRLML2502TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .045 ohm;
IRFZ44NS
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Drain Current (ID): 49 A; Terminal Position: SINGLE;
IRF9Z34NSTRLPBF
Infineon Technologies
IRF9Z34NSTRLPBF by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 68A and 0.1 ohm RDS(ON), suitable for ENHANCEMENT MODE operation in various electronic devices. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, making it easy to mount on PCBs.
2N7000
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Matte Tin (Sn);
NTMFS5C670NLT1G
NTMFS5C670NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 60V DS breakdown voltage, and 440A pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages, such as power supplies and motor control systems.
RFD16N05LSM9A
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Terminal Finish: TIN LEAD; JEDEC-95 Code: TO-252AA;
BSC014N04LSIATMA1
Infineon BSC014N04LSIATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 780A IDM, and 0.002 ohm RDS(ON). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in various electronic devices due to its small outline package and high power dissipation capability.
NTMFS5C604NLT1G
NTMFS5C604NLT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 900A IDM, and 0.0017 ohm RDS(on). It is used in power applications due to its 200W max power dissipation, -55 to 175 °C operating temp range, and built-in diode configuration.
IRF530A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; JESD-609 Code: e3; Maximum Operating Temperature: 175 Cel;
IRLML6401GTRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Minimum DS Breakdown Voltage: 12 V;
NTD2955T4G
NTD2955T4G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 18A.
IRFZ44NLPBF
IRFZ44NLPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 150mJ EAS, and 0.0175 ohm RDS(on). Operating at up to 175°C, it has a power dissipation of 94W in an IN-LINE package.
IRLR3110ZTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Form: GULL WING;
IRFH5004TRPBF
The Infineon Technologies IRFH5004TRPBF is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A ID. Ideal for SWITCHING applications, it features a built-in diode, 400A IDM, and 0.0026 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 250W and can withstand temperatures up to 150°C.
Transys Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 55 V; Terminal Form: GULL WING; No. of Terminals: 2;
FQD3P50TM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
SISS71DN-T1-GE3
Vishay Intertechnology's SISS71DN-T1-GE3 is a P-channel FET with 100V DS breakdown voltage, ideal for switching applications. Featuring 40A max pulsed drain current and 0.082 ohm max on-resistance, it operates in enhancement mode with -50 to 150°C temperature range. Suitable for surface mount designs, this transistor offers high performance in a compact square package.
JANTX2N6796
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Package Shape: ROUND; Transistor Application: SWITCHING;
SI7469ADP-T1-RE3
Vishay Intertechnology's SI7469ADP-T1-RE3 is a P-channel FET with 80V DS breakdown voltage and 125A IDM. Ideal for switching applications, it features a built-in diode, 0.027 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount with 5 terminals, this MOSFET has a max power dissipation of 73.5W and can withstand temperatures from -55 to 150°C.
BSC028N06NSTATMA1
BSC028N06NSTATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.0028 ohm max RDS(on), and 400A IDM. It's used for switching applications due to its built-in diode, small outline package style, and high pulsed drain current capacity.
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IRF7240TRPBF
IRF7240TRPBF by Infineon is a P-CHANNEL FET for switching applications. It features a 40V DS breakdown voltage, 10.5A max drain current, and 0.015 ohm max on resistance. With a small outline package style and operating temperature range of -55 to 150 °C, it's ideal for power management in various electronic devices.
IRF7425TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
IRF7425TRPBF by Infineon Technologies is a P-CHANNEL FET with 20V DS Breakdown Voltage, 15A Drain Current, and 0.0082 ohm On Resistance. Ideal for SWITCHING applications, it features a built-in diode in a RECTANGULAR package with GULL WING terminals. Operating in ENHANCEMENT MODE, it can handle up to 60A Pulsed Drain Current.
IRF7343TRPBF
IRF7343TRPBF by Infineon is a Power FET with N-Channel and P-Channel types. It has 2 separate elements with built-in diode for switching applications. Features include 55V DS breakdown voltage, 38A max pulsed drain current, and 0.05 ohm max drain-source resistance. Ideal for enhancement mode operation in various electronic devices.
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8;
IRF7341TRPBF
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 4.7 A;
Infineon's IRF7341TRPBF is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 42A IDM, 140mJ EAS, and 0.05 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it suits various high-power electronic designs.
IRF7416TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: MS-012AA; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;
IRF7103TRPBF
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Body Material: PLASTIC/EPOXY; Additional Features: LOGIC LEVEL COMPATIBLE;
IRF7103TRPBF by Infineon Technologies is a N-CHANNEL Power FET with 50V DS Breakdown Voltage and 3A Drain Current. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring a 0.13 ohm On Resistance. This small outline transistor has 2 elements with built-in diode, operating up to 150°C.
IRF7410TRPBF
Infineon's IRF7410TRPBF is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 65A IDM, 0.007 ohm RDS(on), and operates in ENHANCEMENT MODE. With GULL WING terminals and SMALL OUTLINE package, it can withstand -55 to 150 °C temperatures.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 30;
IRF7319TRPBF
IRF7319TRPBF by Infineon is a Power FET with N- and P-channel types. It features 2 separate elements with built-in diode, ideal for switching applications. With a max pulsed drain current of 30A and low on-resistance of 0.029 ohm, it operates in enhancement mode for efficient performance.
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
IRF740PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Vishay Intertechnology's IRF740PBF is a N-CHANNEL Power FET with 400V DS Breakdown Voltage and 40A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 520mJ EAS rating, and 0.55 ohm RDS(on).
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-220AB; Package Style (Meter): FLANGE MOUNT;
IRF7425TRPBF-1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;
IRF7425TRPBF-1 by Infineon is a P-channel Power FET with 20V DS breakdown voltage, 15A max drain current, and 0.0082 ohm RDS(on). It's used in power management applications due to its small outline package, 60A pulsed drain current, and -55 to +150°C operating temperature range.
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