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2N7002-T1-E3

Vishay Intertechnology

2N7002-T1-E3 by Vishay Intertechnology

Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.

Median Price

$0.228

Lifecycle Status

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43

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1k+

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Mouser Electronics

USA . 415,605 parts In-Stock

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Arrow

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Adafruit Industries

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Avnet

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TTI

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Chip1Stop

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Farnell

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Verical

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Freelance Electronics

USA . 3,870 parts In-Stock

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Nova Conductors

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Component Sense

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NAC Semi

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Bristol Electronics

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LIBRA Elektronik GmbH

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Micros

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Partservice

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Semi Source

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Connector Distribution Corp

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TME

Poland . 3,763 parts In-Stock

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Martec Srl

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Micros sp.j. W. Kędra i J. Lic

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Prism Electronics

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Semicontronic

India . 67,021 parts In-Stock

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Ampacity Inc.

Singapore . 74,367 parts In-Stock

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Continental Prestige Electronics

USA . 6,965 parts In-Stock

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Argo Parts USA

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Netroflash

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Modulus Dynamics

Lithuania . 38 parts In-Stock

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CoreStaff

Japan . 2,980 parts In-Stock

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Corohmni

South Africa . 13 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,042 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

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Eastek

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Glotronic Ltd.

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Robosynatics

Brazil . 5,655 parts In-Stock

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Lucentia Tech

USA . 5,655 parts In-Stock

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ChipTracer

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Overview

Unleash the power of cutting-edge technology with the 2N7002-T1-E3 by Vishay Intertechnology. Crafted with precision and expertise, this Small Signal Field Effect Transistor offers unparalleled performance in switching applications. With a sleek design and high-quality construction, this N-Channel transistor is a game-changer in the world of electronics. Experience seamless operation and enhanced efficiency with the 2N7002-T1-E3. Elevate your projects to new heights with this innovative solution from Vishay Intertechnology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have better performance characteristics and are commonly used in switching applications.

Configuration: SINGLE

Simplified design with a single transistor for easier installation and maintenance.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in those scenarios.

Surface Mount: YES

Easily mounted on PCBs, facilitating automated assembly processes and saving space.

Minimum DS Breakdown Voltage: 60 V

Can handle relatively high voltages, expanding the range of applications where it can be used.

Maximum Drain Current (Abs) (ID): 0.115 A

Can handle moderate current loads, suitable for many small signal applications.

Maximum Power Dissipation (Abs): 0.2 W

Efficient power handling capability for its size, ensuring reliable operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Known for low power consumption and high switching speeds, enhancing overall performance.

Maximum Operating Temperature: 150 °C

Can operate in higher temperature environments, expanding its range of applications.

Maximum Drain-Source On Resistance: 7.5 ohm

Low on-resistance minimizes power loss and heat generation, improving efficiency.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N7002-T1-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW THRESHOLD

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.115 A

Maximum Drain Current (ID):

.115 A

Maximum Drain-Source On Resistance:

7.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N7002-T1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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