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FDS6875_NL

Fairchild Semiconductor

FDS6875_NL by Fairchild Semiconductor

FDS6875_NL by Fairchild Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage, 6A Max ID, and 0.03 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, this transistor has 2 elements with built-in diode in a GULL WING package.

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Overview

Experience the unmatched quality and reliability of Fairchild Semiconductor with the FDS6875_NL Power Field Effect Transistor. Designed for switching applications, this P-CHANNEL transistor offers exceptional performance and efficiency. With a maximum pulsed drain current of 20A and a minimum DS breakdown voltage of 20V, this transistor is perfect for a wide range of electronic projects. Trust in Fairchild Semiconductor to deliver cutting-edge technology and reliable products that exceed expectations. Upgrade your design with the FDS6875_NL and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their low on-resistance and high current-handling capabilities, making this transistor efficient for switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Having separate elements with a built-in diode allows for more flexibility in circuit design and enhances performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and efficient performance.

Surface Mount: YES

The surface mount capability of this FET makes it easy to integrate into compact electronic designs and saves space.

Minimum DS Breakdown Voltage: 20 V

The minimum breakdown voltage of 20V ensures reliable operation and protection against voltage spikes.

Maximum Pulsed Drain Current (IDM): 20 A

With a high maximum pulsed drain current, this FET can handle sudden surges in current without damage, making it reliable in demanding applications.

Maximum Drain Current (Abs) (ID): 6 A

The maximum drain current of 6A allows for efficient power handling and reliable operation within the specified limits.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this FET can handle heat dissipation effectively, ensuring long-term reliability.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this FET to operate in a wide range of temperature conditions without performance degradation.

Technical Specifications

Power Field Effect Transistors (FET) FDS6875_NL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

6 A

Maximum Drain Current (ID):

6 A

Maximum Drain-Source On Resistance:

.03 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Maximum Pulsed Drain Current (IDM):

20 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDS6875_NL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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