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NTBG020N120SC1

Onsemi

NTBG020N120SC1 by Onsemi

NTBG020N120SC1 by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 98A, Avalanche Energy Rating of 264mJ, and Operating Temperature up to 175°C. This SINGLE configuration transistor has GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology in a RECTANGULAR package.

Median Price

$38.960

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 846 parts In-Stock

1+ parts

$30.902

100+ parts

$26.210

1k+ parts

$22.976

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846

$30.902

$26.210

$22.976

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Mouser Electronics

USA . 1,384 parts In-Stock

1+ parts

$38.960

100+ parts

$29.460

1k+ parts

$27.900

10k+ parts

-

1,384

$38.960

$29.460

$27.900

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DigiKey

USA . 951 parts In-Stock

1+ parts

$38.960

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951

$38.960

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Newark

USA . 947 parts In-Stock

1+ parts

$48.910

100+ parts

$41.810

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947

$48.910

$41.810

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Element14

Singapore . 904 parts In-Stock

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$56.330

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$42.600

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904

$56.330

$42.600

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Chip1Stop

Japan . 651 parts In-Stock

1+ parts

$127.000

100+ parts

$62.700

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$45.300

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651

$127.000

$62.700

$45.300

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EBV Elektronik

Germany . 2,400 parts In-Stock

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2,400

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Avnet

USA . 800 parts In-Stock

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$24.688

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$23.484

800

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$24.688

$23.484

Verical

USA . 800 parts In-Stock

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$23.900

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$23.900

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Rochester

USA . 15 parts In-Stock

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-

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$24.070

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$21.540

10k+ parts

$20.270

15

-

$24.070

$21.540

$20.270

Distributors (In-Stock)

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Digiode

USA . 470 parts In-Stock

1+ parts

$21.764

100+ parts

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470

$21.764

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Nova Conductors

Japan . 71 parts In-Stock

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$34.487

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71

$34.487

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IBS Electronics

USA . 30 parts In-Stock

1+ parts

$37.068

100+ parts

$28.162

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$35.301

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30

$37.068

$28.162

$35.301

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Flip Electronics

USA . 1,600 parts In-Stock

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1,600

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NAC Semi

USA . 1,600 parts In-Stock

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$49.890

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$45.350

1,600

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$49.890

$45.350

Vyrian

USA . 1,027 parts In-Stock

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1,027

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 12,623 parts In-Stock

1+ parts

$0.349

100+ parts

$0.349

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$0.349

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12,623

$0.349

$0.349

$0.349

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Aztec Data Supply Inc.

USA . 3,160 parts In-Stock

1+ parts

$0.483

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3,160

$0.483

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$1.637

100+ parts

$1.555

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$1.555

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50

$1.637

$1.555

$1.555

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Ampacity Inc.

Singapore . 895 parts In-Stock

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$4.910

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$4.910

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Corohmni

South Africa . 334 parts In-Stock

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$5.777

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334

$5.777

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Semicontronic

India . 1,118 parts In-Stock

1+ parts

$19.470

100+ parts

$18.983

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$18.886

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$19.470

$18.983

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Corphita

USA . 74 parts In-Stock

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$20.619

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$20.619

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Aranea Global

USA . 100 parts In-Stock

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$33.797

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$32.445

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$33.797

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$32.445

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Microchip USA

USA . 5,933 parts In-Stock

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$73.665

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Lixinc

USA . 13,195 parts In-Stock

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Problanco Electronics

Mexico . 6,558 parts In-Stock

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Eastek

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Perfect Parts

USA . 5,553 parts In-Stock

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TANS Electronics

Latvia . 3,531 parts In-Stock

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Argo Parts USA

USA . 1,681 parts In-Stock

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SupplyDigital Components

Austria . 1,374 parts In-Stock

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Kulean Microsystems

USA . 1,258 parts In-Stock

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GreenTree Electronics

Israel . 751 parts In-Stock

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Authorized Procurement Solutions

USA . 670 parts In-Stock

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Continental Prestige Electronics

USA . 450 parts In-Stock

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$22.410

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UHIMA Technologies

Türkiye . 101 parts In-Stock

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101

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Overview

Discover the power of the Onsemi NTBG020N120SC1 Power Field Effect Transistor (FET) - a game-changer in the world of switching applications. With a high DS Breakdown Voltage of 1200V and an impressive Maximum Drain Current of 98A, this N-CHANNEL transistor offers unparalleled performance and reliability. Its single configuration with built-in diode makes it a versatile choice for various projects. Whether you're looking to enhance your system's efficiency or increase its power handling capabilities, the NTBG020N120SC1 delivers exceptional value and benefits that will elevate your designs to new heights. Choose Onsemi for quality you can trust.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better performance and efficiency compared to P-channel FETs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation.

Minimum DS Breakdown Voltage: 1200 V

High breakdown voltage allows for reliable operation in high voltage applications.

Maximum Power Dissipation (Abs): 468 W

High power dissipation capability enables the transistor to handle high current loads without overheating.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures without compromising performance, making it suitable for demanding environments.

Maximum Drain Current (ID): 98 A

High drain current rating allows the transistor to handle large current loads effectively.

Maximum Drain-Source On Resistance: 0.028 ohm

Low on-resistance ensures minimal power loss and efficient operation.

Technical Specifications

Power Field Effect Transistors (FET) NTBG020N120SC1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

264 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

1200 V

Maximum Drain Current (Abs) (ID):

98 A

Maximum Drain Current (ID):

98 A

Maximum Drain-Source On Resistance:

.028 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

24 pF

JEDEC-95 Code:

TO-263CB

JESD-30 Code:

R-PSSO-G7

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

7

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

392 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON CARBIDE

Maximum Turn Off Time (toff):

94 ns

Maximum Turn On Time (ton):

106 ns

Trade Compliance

NTBG020N120SC1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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