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NTBG020N090SC1

Onsemi

NTBG020N090SC1 by Onsemi

The Onsemi NTBG020N090SC1 is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 112A, 0.028 ohm On Resistance, and an Avalanche Energy Rating of 264mJ. This PLASTIC/EPOXY package has GULL WING terminals and operates in ENHANCEMENT MODE up to 175°C.

Median Price

$21.445

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 279 parts In-Stock

1+ parts

$20.950

100+ parts

$16.010

1k+ parts

$15.520

10k+ parts

$15.020

279

$20.950

$16.010

$15.520

$15.020

Newark

USA . 64 parts In-Stock

1+ parts

$21.940

100+ parts

$21.410

1k+ parts

$20.560

10k+ parts

-

64

$21.940

$21.410

$20.560

-

Future Electronics

Canada . 20 parts In-Stock

1+ parts

$26.130

100+ parts

$21.940

1k+ parts

$19.330

10k+ parts

-

20

$26.130

$21.940

$19.330

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Mouser Electronics

USA . 1,859 parts In-Stock

1+ parts

$28.380

100+ parts

$21.670

1k+ parts

$20.510

10k+ parts

-

1,859

$28.380

$21.670

$20.510

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DigiKey

USA . 714 parts In-Stock

1+ parts

$30.480

100+ parts

$21.662

1k+ parts

-

10k+ parts

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714

$30.480

$21.662

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Element14

Singapore . 279 parts In-Stock

1+ parts

$37.450

100+ parts

$28.630

1k+ parts

$26.030

10k+ parts

$25.540

279

$37.450

$28.630

$26.030

$25.540

Arrow

USA . 4,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$18.553

10k+ parts

-

4,800

-

-

$18.553

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Verical

USA . 4,800 parts In-Stock

1+ parts

-

100+ parts

-

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$18.613

10k+ parts

-

4,800

-

-

$18.613

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Chip1Stop

Japan . 1,870 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$18.400

10k+ parts

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1,870

-

-

$18.400

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EBV Elektronik

Germany . 800 parts In-Stock

1+ parts

-

100+ parts

-

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800

-

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Rochester

USA . 60 parts In-Stock

1+ parts

-

100+ parts

$17.710

1k+ parts

$15.840

10k+ parts

$14.910

60

-

$17.710

$15.840

$14.910

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 294 parts In-Stock

1+ parts

$18.430

100+ parts

-

1k+ parts

-

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294

$18.430

-

-

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Nova Conductors

Japan . 75 parts In-Stock

1+ parts

$27.676

100+ parts

-

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75

$27.676

-

-

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IBS Electronics

USA . 2,510 parts In-Stock

1+ parts

$36.647

100+ parts

-

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-

10k+ parts

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2,510

$36.647

-

-

-

Chip Stock

USA . 44,000 parts In-Stock

1+ parts

-

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44,000

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Flip Electronics

USA . 3,200 parts In-Stock

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3,200

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Vyrian

USA . 515 parts In-Stock

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515

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NAC Semi

USA . 32 parts In-Stock

1+ parts

-

100+ parts

$33.600

1k+ parts

-

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32

-

$33.600

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,619 parts In-Stock

1+ parts

$0.895

100+ parts

-

1k+ parts

-

10k+ parts

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1,619

$0.895

-

-

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Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$0.950

100+ parts

$0.865

1k+ parts

$0.779

10k+ parts

-

270

$0.950

$0.865

$0.779

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Corohmni

South Africa . 349 parts In-Stock

1+ parts

$5.921

100+ parts

-

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-

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349

$5.921

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Ampacity Inc.

Singapore . 660 parts In-Stock

1+ parts

$15.040

100+ parts

-

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-

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660

$15.040

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Semicontronic

India . 514 parts In-Stock

1+ parts

$15.040

100+ parts

$14.664

1k+ parts

$14.589

10k+ parts

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514

$15.040

$14.664

$14.589

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Corphita

USA . 210 parts In-Stock

1+ parts

$17.460

100+ parts

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210

$17.460

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Microchip USA

USA . 4,634 parts In-Stock

1+ parts

$66.408

100+ parts

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4,634

$66.408

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Problanco Electronics

Mexico . 8,345 parts In-Stock

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8,345

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Kulean Microsystems

USA . 7,112 parts In-Stock

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TANS Electronics

Latvia . 4,803 parts In-Stock

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4,803

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Argo Parts USA

USA . 2,195 parts In-Stock

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Eastek

USA . 800 parts In-Stock

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800

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SupplyDigital Components

Austria . 591 parts In-Stock

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591

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Continental Prestige Electronics

USA . 499 parts In-Stock

1+ parts

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$19.670

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499

-

$19.670

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Bastille Electronics

Australia . 200 parts In-Stock

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200

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UHIMA Technologies

Türkiye . 122 parts In-Stock

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122

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GreenTree Electronics

Israel . 77 parts In-Stock

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77

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Overview

Experience the power of innovation with the NTBG020N090SC1 by Onsemi, a top-tier manufacturer known for delivering high-quality Power Field Effect Transistors (FET). Ideal for switching applications, this N-CHANNEL transistor offers a single configuration with a built-in diode, ensuring optimal performance and reliability. With a maximum DS Breakdown Voltage of 900V and a low on-resistance of 0.028 ohm, this FET provides exceptional efficiency and durability. Whether you're looking to enhance your electronics or improve energy management systems, the NTBG020N090SC1 is the perfect choice for those seeking superior quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs have lower ON-state resistance and higher switching speeds compared to P-channel FETs, making them ideal for efficient power management.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps prevent reverse voltage spikes, making it suitable for switching applications where back EMF protection is required.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET ensures efficient power handling and fast switching speeds.

Surface Mount: YES

Being surface-mount compatible allows for easy and efficient PCB assembly, making it a convenient choice for modern electronics manufacturing.

Minimum DS Breakdown Voltage: 900 V

With a high breakdown voltage, this FET can handle high voltage levels safely, making it suitable for high-power applications.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact footprint, allowing for space-saving designs in various applications.

Terminal Form: GULL WING

The gull wing terminals make soldering easy and secure, ensuring reliable connections for stable performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer easier control over the switching process, making this product versatile and reliable for different applications.

Maximum Pulsed Drain Current (IDM): 448 A

This high current rating allows for handling short-duration peak currents, making it suitable for applications with high power demands.

Technical Specifications

Power Field Effect Transistors (FET) NTBG020N090SC1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

264 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

900 V

Maximum Drain Current (Abs) (ID):

112 A

Maximum Drain Current (ID):

112 A

Maximum Drain-Source On Resistance:

.028 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

25 pF

JEDEC-95 Code:

TO-263CB

JESD-30 Code:

R-PSSO-G7

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

7

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

448 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON CARBIDE

Trade Compliance

NTBG020N090SC1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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