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NTBG015N065SC1

Onsemi

NTBG015N065SC1 by Onsemi

NTBG015N065SC1 by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for power applications. It features a max Drain Current of 176A and Power Dissipation of 867W. With ENHANCEMENT MODE operation and SILICON CARBIDE material, it ensures high performance in various industrial settings.

Median Price

$23.519

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 670 parts In-Stock

1+ parts

$22.228

100+ parts

$16.189

1k+ parts

$14.591

10k+ parts

-

670

$22.228

$16.189

$14.591

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Mouser Electronics

USA . 3,914 parts In-Stock

1+ parts

$24.810

100+ parts

$21.300

1k+ parts

$19.940

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3,914

$24.810

$21.300

$19.940

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DigiKey

USA . 2,661 parts In-Stock

1+ parts

$28.150

100+ parts

-

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$17.439

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2,661

$28.150

-

$17.439

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Chip1Stop

Japan . 1,234 parts In-Stock

1+ parts

$93.600

100+ parts

$43.800

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$29.200

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1,234

$93.600

$43.800

$29.200

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Richardson RFPD

USA . 800 parts In-Stock

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$17.440

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$17.440

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Verical

USA . 600 parts In-Stock

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$21.788

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$19.500

10k+ parts

$18.350

600

-

$21.788

$19.500

$18.350

Rochester

USA . 600 parts In-Stock

1+ parts

-

100+ parts

$17.430

1k+ parts

$15.600

10k+ parts

$14.680

600

-

$17.430

$15.600

$14.680

RS (Exports)

UK . 407 parts In-Stock

1+ parts

-

100+ parts

$26.481

1k+ parts

$25.170

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407

-

$26.481

$25.170

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Farnell

UK . 76 parts In-Stock

1+ parts

-

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$20.645

1k+ parts

$19.835

10k+ parts

$19.025

76

-

$20.645

$19.835

$19.025

Element14

Singapore . 76 parts In-Stock

1+ parts

-

100+ parts

$162.100

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$151.150

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76

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$162.100

$151.150

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Avnet

USA . 64 parts In-Stock

1+ parts

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100+ parts

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$82.123

10k+ parts

$77.053

64

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$82.123

$77.053

Newark

USA . 13 parts In-Stock

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-

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$21.940

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13

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$21.940

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Distributors (In-Stock)

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Digiode

USA . 1,863 parts In-Stock

1+ parts

$19.332

100+ parts

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1,863

$19.332

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$31.793

100+ parts

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500

$31.793

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Flip Electronics

USA . 8,000 parts In-Stock

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8,000

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NAC Semi

USA . 1,600 parts In-Stock

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$27.370

10k+ parts

$25.260

1,600

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-

$27.370

$25.260

Vyrian

USA . 765 parts In-Stock

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765

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Sensible Micro Corp

USA . 30 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 774 parts In-Stock

1+ parts

$4.920

100+ parts

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774

$4.920

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Corohmni

South Africa . 357 parts In-Stock

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$5.786

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357

$5.786

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Corphita

USA . 762 parts In-Stock

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$18.315

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$18.315

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Netroflash

USA . 50 parts In-Stock

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$31.793

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$31.793

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Microchip USA

USA . 7,634 parts In-Stock

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$64.890

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$64.890

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Lixinc

USA . 14,877 parts In-Stock

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Problanco Electronics

Mexico . 5,702 parts In-Stock

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Kulean Microsystems

USA . 5,290 parts In-Stock

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SupplyDigital Components

Austria . 4,914 parts In-Stock

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Perfect Parts

USA . 4,843 parts In-Stock

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Argo Parts USA

USA . 2,393 parts In-Stock

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iodParts Technologies Inc.

India . 1,600 parts In-Stock

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TANS Electronics

Latvia . 581 parts In-Stock

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Allen Electronics Distributors

USA . 407 parts In-Stock

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$25.823

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$25.247

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407

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$25.823

$25.247

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Continental Prestige Electronics

USA . 361 parts In-Stock

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$27.000

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UHIMA Technologies

Türkiye . 71 parts In-Stock

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71

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Overview

Discover the power and reliability of Onsemi's NTBG015N065SC1 Power FET. This high-quality N-CHANNEL transistor offers superior performance in a range of applications, from industrial to automotive. With a robust design and built-in diode, this transistor provides unmatched efficiency and durability. Trust Onsemi's expertise and innovation to deliver value and benefits that exceed expectations. Experience the difference with the NTBG015N065SC1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FET.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have better performance and lower on-resistance compared to P-Channel FETs.

Minimum DS Breakdown Voltage: 650 V

High breakdown voltage ensures reliability and protection against voltage surges.

Maximum Power Dissipation (Abs): 867 W

High power dissipation allows for reliable operation under heavy load conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers low on-resistance and high switching speeds.

Maximum Operating Temperature: 175 °C

Can operate in high-temperature environments without overheating.

Transistor Element Material: SILICON CARBIDE

Silicon carbide offers higher thermal conductivity and can handle higher temperatures compared to silicon.

Technical Specifications

Power Field Effect Transistors (FET) NTBG015N065SC1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (Abs) (ID):

176 A

Maximum Drain Current (ID):

176 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

39.42 pF

JEDEC-95 Code:

TO-263CB

JESD-30 Code:

R-PSSO-G7

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

7

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

873 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON CARBIDE

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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