Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NTBG028N170M1 by Onsemi is a N-CHANNEL Power FET for switching applications. It features a 1700V DS breakdown voltage, 195A max pulsed drain current, and 0.04 ohm max drain-source resistance. Ideal for high-power switching circuits requiring efficient performance in a compact small outline package.
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Plastic/Epoxy package body material provides durability and protection for the internal components of the FET, making it suitable for various environmental conditions.
N-channel FETs generally have lower ON resistance and higher switching speeds compared to P-channel FETs, making them efficient for switching applications.
High breakdown voltage ensures reliable operation and protection against voltage spikes in high voltage applications.
High power dissipation capability allows the FET to handle large amounts of power without overheating, making it reliable for high-power applications.
High drain current rating allows the FET to handle large current flows, suitable for high-current switching applications.
Silicon carbide material offers high thermal conductivity and efficiency, allowing for improved performance and reliability in high-temperature applications.
Power Field Effect Transistors (FET) NTBG028N170M1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
NTBG028N170M1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - NTBG0x/NVBG0x 14/Dec/2022
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
FDV303N
Onsemi
FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
ULN2803ADWRG4
Texas Instruments
ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.
LL4148
Goodwork Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
FDC5614P
MSKSEMI SEMICONDUCTOR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
BAT54SLT1G
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
1N4148WT
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM107H
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Minimum Voltage Gain: 25000;
2N2222A
SPC TECHNOLOGY/ MULTICOMP
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138K-13
Diodes Incorporated
BSS138K-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, operating in enhancement mode. With 3 terminals and 0.31A max drain current, it offers high performance in small outline package style.
SS14
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Littelfuse
Infineon Technologies
NDT2955
NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.
MBR0520LT3G
MBR0520LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, ideal for applications requiring high-speed switching and low power loss in compact electronic devices. The package style is small outline, making it suitable for surface mount designs in various electronics.
NE555/D
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;
LM358AN
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Bias Current (IIB) @25C: .075 uA;
CGA3E2X7R1H104K080AA
TDK
CGA3E2X7R1H104K080AA by TDK is a fixed ceramic capacitor with a capacitance of 0.1 uF and a rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate at temperatures ranging from -55 to 125 °C. This capacitor is commonly used in surface mount applications for various electronic devices.
SUM90P10-19L-E3
Vishay Intertechnology
Vishay Intertechnology's SUM90P10-19L-E3 is a P-channel power FET with 100V DS breakdown voltage and 90A IDM. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 375W, this MOSFET has a drain-source on resistance of 0.019 ohm and can withstand temperatures from -55 to 175°C.
IRLL024NTRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; Case Connection: DRAIN;
SI7431DP-T1-GE3
Vishay Intertechnology's SI7431DP-T1-GE3 is a P-CHANNEL FET for switching applications. Features include 200V DS breakdown voltage, 30A pulsed drain current, and 0.174 ohm max on-resistance. Ideal for high-power applications requiring efficient switching with a max operating temperature of 150°C.
FQD1N80TM
FQD1N80TM by Onsemi is a N-CHANNEL Power FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 4A and EAS of 90mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in small outline designs at up to 150°C.
NTTFS5116PLTAG
NTTFS5116PLTAG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 76A and EAS of 45mJ, operating in ENHANCEMENT MODE. With a compact SQUARE package style and high power dissipation of 40W, it offers reliable performance in various electronic systems.
LND150N8-G
Microchip Technology
LND150N8-G by Microchip is a N-CHANNEL FET with 0.03A IDM, ideal for SWITCHING applications. Operating in DEPLETION MODE, it has a 1.6W power dissipation and 1000 ohm RDS(on). With a peak temperature of 260C, it's suitable for surface mount designs in various electronic systems.
SIS413DN-T1-GE3
Vishay Intertechnology's SIS413DN-T1-GE3 is a P-channel FET with 30V DS breakdown voltage, ideal for switching applications. Features include 70A max pulsed drain current, 0.0094 ohm max RDS(on), and 20mJ avalanche energy rating. Suitable for enhancement mode operation in small outline packages with drain case connection.
AUIRFZ44NSTRR
AUIRFZ44NSTRR by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 160A and Max Power Dissipation of 94W. With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology, it offers high performance in various power management systems.
NTD2955T4G
NTD2955T4G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 18A.
STP55NF06
STMicroelectronics
STP55NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 200A IDM, and 0.018 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
BSS138
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 240;
JANTX2N6796
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
NDT3055
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain-Source On Resistance: .1 ohm; Package Body Material: PLASTIC/EPOXY;
SUM110P06-08L-E3
Vishay Intertechnology's SUM110P06-08L-E3 is a P-channel FET with 60V DS breakdown voltage and 200A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.008 ohm max RDS(on), and 272W max power dissipation.
SIRA01DP-T1-GE3
Vishay Intertechnology's SIRA01DP-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 150A IDM, 31.2mJ EAS, and 0.0049 ohm RDS(ON). Operating from -55 to 150 °C, it has a fast ton of 42ns and toff of 98ns in a small outline package.
FDML7610S
Fairchild Semiconductor
N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF640STRRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 18 A;
SUM70101EL-GE3
Vishay Intertechnology's SUM70101EL-GE3 is a P-channel FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 240A pulsed drain current. Operating in enhancement mode, it has a max operating temperature of 175°C and low on-resistance of 0.0101 ohm.
BSP317PH6327XTSA1
BSP317PH6327XTSA1 by Infineon is a P-CHANNEL FET with 250V DS breakdown voltage. It features a single configuration with built-in diode, suitable for enhancement mode operation. This MOSFET has 1.72A max pulsed drain current and is ideal for automotive applications meeting AEC-Q101 standards.
2N7002
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;
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NTBG020N120SC1
NTBG020N120SC1 by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 98A, Avalanche Energy Rating of 264mJ, and Operating Temperature up to 175°C. This SINGLE configuration transistor has GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology in a RECTANGULAR package.
NTBG020N090SC1
The Onsemi NTBG020N090SC1 is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 112A, 0.028 ohm On Resistance, and an Avalanche Energy Rating of 264mJ. This PLASTIC/EPOXY package has GULL WING terminals and operates in ENHANCEMENT MODE up to 175°C.
NTBG040N120SC1
NTBG040N120SC1 by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 240A IDM, 578mJ EAS, and 0.056ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 357W and operates at temperatures up to 175°C.
NTBG025N065SC1
Power Field-Effect Transistors;
NTBGS002N06C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 242 W; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): 252 A;
NTBG080N120SC1
NTBG080N120SC1 by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 30A, 179W Power Dissipation, and operates in ENHANCEMENT MODE. With a peak reflow temperature of 245°C and an operating temperature range from -55 to 175°C, it offers reliable performance in various industrial settings.
NTBG015N065SC1
NTBG015N065SC1 by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for power applications. It features a max Drain Current of 176A and Power Dissipation of 867W. With ENHANCEMENT MODE operation and SILICON CARBIDE material, it ensures high performance in various industrial settings.
NTBGS001N06C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NTBG060N065SC1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 344 W; Minimum Operating Temperature: -55 Cel; No. of Terminals: 7;
NTBG1000N170M1
NTBG040N120M3S
NTBG160N120SC1
The Onsemi NTBG160N120SC1 is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 78A and EAS of 120mJ. With a compact SMALL OUTLINE package and SILICON CARBIDE material, it operates b/w -55 to 175 °C for efficient performance.
NTBG030N120M3S
NTBG022N120M3S
NTBG022N120M3S by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 159A, EAS of 267mJ, and RDS(on) of 0.03 ohm. With a DRAIN case connection and SILICON CARBIDE element material, it operates b/w -55 to 175 °C.
NTBG045N065SC1
NTBG045N065SC1 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features a Max IDM of 315A and ID of 73.7A, suitable for high-power applications like industrial motor drives and power supplies. With an operating temperature range from -55 to 175 °C, it offers reliable performance in various environments.
NTBG050N065SC1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 425 W; Transistor Element Material: SILICON CARBIDE; No. of Terminals: 7;
NTBG014N120M3P
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 454 W; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
NTBG060N090SC1
The Onsemi NTBG060N090SC1 is a N-CHANNEL FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 176A and EAS of 162mJ, operating in ENHANCEMENT MODE. With a Drain Current of 44A and 0.084 ohm RDS(on), this MOSFET offers high power dissipation up to 211W in a SMALL OUTLINE package.
NTBG070N120M3S
Supply Digital Components
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