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IRLML6402TR

International Rectifier

IRLML6402TR by International Rectifier

IRLML6402TR by International Rectifier is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22A IDM and 0.065 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a built-in diode, making it suitable for various power management tasks.

Median Price

$0.380

Lifecycle Status

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Component Electronics Inc.

Canada . 1,682 parts In-Stock

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TEDSS.com

USA . 181 parts In-Stock

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Sensible Micro Corp

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Corohmni

South Africa . 728 parts In-Stock

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Advanced Electronics

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AZTECH Wire

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Lucentia Tech

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Unlock the power of efficient switching with the IRLML6402TR by International Rectifier. Crafted with precision and expertise, this P-CHANNEL FET offers reliability and performance like no other. Ideal for a variety of applications, this transistor is designed to enhance your systems' efficiency. With a built-in diode and a small outline package, it's perfect for space-constrained designs. Experience the benefits of enhanced mode operation and maximum pulsing capabilities, all while ensuring a long-lasting performance. Trust International Rectifier for quality and innovation that delivers value to you.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the internal components, making the product durable and reliable.

Polarity or Channel Type: P-CHANNEL

P-CHANNEL type allows for efficient switching and power control, making it suitable for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and saves space, making the product more convenient to use.

Transistor Application: SWITCHING

Designed for switching applications, this product can handle rapid changes in power flow effectively.

Surface Mount: YES

Being surface mountable makes the product easy to install and saves space on the PCB.

Minimum DS Breakdown Voltage: 20 V

A minimum breakdown voltage of 20V ensures that the product can handle higher voltages without damage, increasing its reliability.

Maximum Pulsed Drain Current (IDM): 22 A

High pulsed drain current rating allows the product to handle sudden surges in current, making it suitable for applications with high power demands.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this product can withstand higher temperatures, making it suitable for various environments.

Technical Specifications

Power Field Effect Transistors (FET) IRLML6402TR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

HIGH RELIABILITY

Avalanche Energy Rating (EAS):

11 mJ

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3.7 A

Maximum Drain Current (ID):

3.7 A

Maximum Drain-Source On Resistance:

.065 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

22 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRLML6402TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-554-1867, 5961015541867

NIIN

015541867

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