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NTD2955T4G

Onsemi

NTD2955T4G by Onsemi

NTD2955T4G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 18A.

Median Price

$0.512

Lifecycle Status

Suppliers In-Stock

46

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Distrelec

Netherlands . 7,430 parts In-Stock

1+ parts

$0.386

100+ parts

$0.364

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$0.342

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7,430

$0.386

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$0.342

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Farnell

UK . 15,719 parts In-Stock

1+ parts

$1.450

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$0.775

1k+ parts

$0.563

10k+ parts

$0.483

15,719

$1.450

$0.775

$0.563

$0.483

DigiKey

USA . 26,880 parts In-Stock

1+ parts

$1.770

100+ parts

$0.755

1k+ parts

$0.545

10k+ parts

$0.444

26,880

$1.770

$0.755

$0.545

$0.444

Mouser Electronics

USA . 23,636 parts In-Stock

1+ parts

$1.770

100+ parts

$0.717

1k+ parts

$0.546

10k+ parts

$0.507

23,636

$1.770

$0.717

$0.546

$0.507

Newark

USA . 1,485 parts In-Stock

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$1.900

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$0.943

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$1.900

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Element14

Singapore . 7,186 parts In-Stock

1+ parts

$2.390

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$1.080

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$0.720

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$0.706

7,186

$2.390

$1.080

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$0.706

Avnet

USA . 1,127,500 parts In-Stock

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Future Electronics

Canada . 1,032,500 parts In-Stock

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EBV Elektronik

Germany . 357,500 parts In-Stock

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Arrow

USA . 52,500 parts In-Stock

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Verical

USA . 52,500 parts In-Stock

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Flip Electronics (Authorized)

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Chip1Stop

Japan . 15,000 parts In-Stock

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Master Electronics

USA . 10,000 parts In-Stock

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$0.425

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$0.405

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$0.383

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$0.425

$0.405

$0.383

RS (Exports)

UK . 4,920 parts In-Stock

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$0.598

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$0.467

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 461 parts In-Stock

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$0.367

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461

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Maritex

Poland . 2,208 parts In-Stock

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$0.616

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$0.328

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$0.296

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$0.616

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$0.296

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Nova Conductors

Japan . 50 parts In-Stock

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$1.000

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$1.000

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TME

Poland . 2,201 parts In-Stock

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$1.610

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$0.461

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2,201

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$0.719

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$0.352

Forefront Electronics and Design

USA . 35 parts In-Stock

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$2.450

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Component Electronics Inc.

Canada . 454 parts In-Stock

1+ parts

$3.850

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$2.880

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454

$3.850

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IBS Electronics

USA . 1,572,500 parts In-Stock

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$0.596

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NAC Semi

USA . 912,500 parts In-Stock

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Vyrian

USA . 65,829 parts In-Stock

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Kruse Electronics AG

Switzerland . 62,500 parts In-Stock

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Germany . 62,500 parts In-Stock

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Chip Stock

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Semtec, LLC

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Cyclops Electronics Ltd

UK . 47,636 parts In-Stock

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Sensible Micro Corp

USA . 17,406 parts In-Stock

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Electro Sonic

Canada . 10,000 parts In-Stock

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Component Sense

UK . 6,636 parts In-Stock

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Velocity Electronics

USA . 5,304 parts In-Stock

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Infinite Electronics LLP

India . 5,000 parts In-Stock

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Speed Components Ltd

Israel . 3,905 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,949 parts In-Stock

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ComSIT USA

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LWI Electronics Inc

India . 2,500 parts In-Stock

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Avant Electronics Limited

UK . 2,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,700 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 540 parts In-Stock

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Bristol Electronics

USA . 198 parts In-Stock

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$0.422

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LIBRA Elektronik GmbH

Germany . 54 parts In-Stock

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Sunrise Surplus Inc.

USA . 10 parts In-Stock

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Prism Electronics

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Distributors (Availability)

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Benley Electronics

USA . 100 parts In-Stock

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$0.250

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Semicontronic

India . 68,980 parts In-Stock

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$0.297

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$0.290

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$0.288

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Ampacity Inc.

Singapore . 67,743 parts In-Stock

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$0.297

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Corohmni

South Africa . 249 parts In-Stock

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Corphita

USA . 2,348 parts In-Stock

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$0.347

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Modulus Dynamics

Lithuania . 7,672 parts In-Stock

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$0.449

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$0.449

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Continental Prestige Electronics

USA . 4,089 parts In-Stock

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$0.575

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$0.564

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Argo Parts USA

USA . 1,965 parts In-Stock

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$0.575

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$0.558

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Netroflash

USA . 100 parts In-Stock

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$1.000

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Aztec Data Supply Inc.

USA . 517 parts In-Stock

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$1.470

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Advanced Electronics

New Zealand . 20 parts In-Stock

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$1.488

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$1.414

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$1.414

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$1.488

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$1.414

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Microchip USA

USA . 9,805 parts In-Stock

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$3.423

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Perfect Parts

USA . 725,166 parts In-Stock

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Infinite Electronics LLP (Excess)

. 192,568 parts In-Stock

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RC Electronics

USA . 85,313 parts In-Stock

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GlobX GmbH

Germany . 56,257 parts In-Stock

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Futuretech Components

Singapore . 50,000 parts In-Stock

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Robosynatics

Brazil . 20,809 parts In-Stock

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Lucentia Tech

USA . 20,809 parts In-Stock

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$1.655

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$1.621

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$1.621

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$1.621

$1.621

Formix International (Excess)

India . 18,845 parts In-Stock

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GreenTree Electronics

Israel . 14,960 parts In-Stock

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TANS Electronics

Latvia . 8,373 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 7,322 parts In-Stock

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Problanco Electronics

Mexico . 7,142 parts In-Stock

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Kulean Microsystems

USA . 4,401 parts In-Stock

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Lixinc

USA . 3,998 parts In-Stock

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iodParts Technologies Inc.

India . 3,464 parts In-Stock

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Authorized Procurement Solutions

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S.R.D Solutions

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A-Z Elektronik GmbH

Germany . 2,855 parts In-Stock

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SupplyDigital Components

Austria . 2,634 parts In-Stock

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Kepictronics

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UHIMA Technologies

Türkiye . 779 parts In-Stock

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Component Stockers USA

USA . 151 parts In-Stock

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$0.560

Overview

Experience the power and reliability of the NTD2955T4G by Onsemi. As a leading manufacturer in the industry, Onsemi consistently delivers high-quality products that meet and exceed customer expectations. The NTD2955T4G is a P-CHANNEL power field effect transistor with a single built-in diode, making it perfect for switching applications. With a minimum DS breakdown voltage of 60V and a maximum pulsing drain current of 18A, this transistor offers exceptional performance and versatility. Its small outline package style and surface mount capability ensure easy integration into your designs. Trust Onsemi and the NTD2955T4G to deliver superior quality and performance for all your power transistor needs.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type

P-CHANNEL - The P-channel configuration allows for efficient switching and control of the transistor, making it ideal for power management systems.

Configuration

SINGLE WITH BUILT-IN DIODE - The built-in diode enables reverse polarity protection and helps prevent damage to the transistor and connected components.

Transistor Application

SWITCHING - Designed specifically for switching applications, this transistor offers fast and reliable performance, enhancing overall system efficiency.

Surface Mount

YES - With surface mount capability, this transistor can be easily mounted onto circuit boards, saving space and ensuring reliable connections.

Minimum DS Breakdown Voltage

60 V - This high voltage rating ensures that the transistor can handle a wide range of power requirements, providing versatility in different applications.

Package Shape

RECTANGULAR - The rectangular shape allows for easy integration into existing circuit designs, simplifying the overall system layout.

Terminal Form

GULL WING - The gull wing terminal form offers robust connections and facilitates soldering, ensuring reliable electrical connections.

Operating Mode

ENHANCEMENT MODE - The enhancement mode operation provides precise control over the transistor's performance, enabling efficient power management.

No. of Elements

1 - Featuring a single element, this transistor simplifies circuit design and reduces complexity, making it an excellent choice for various applications.

Maximum Pulsed Drain Current (IDM)

18 A - With the capability to handle high pulsed drain currents, this transistor can reliably handle demanding power requirements and transient loads.

Avalanche Energy Rating (EAS)

216 mJ - The high avalanche energy rating ensures the transistor's capability to withstand and dissipate energy during voltage spikes or surges, enhancing overall system protection.

Maximum Drain Current (Abs) (ID)

12 A - This high drain current rating allows the transistor to handle substantial power loads, making it suitable for applications that require high power handling capacity.

No. of Terminals

2 - As a two-terminal device, this transistor simplifies circuit design and offers straightforward integration into existing systems.

Maximum Power Dissipation (Abs)

55 W - With a high power dissipation capacity, this transistor can handle significant power loads without the risk of overheating, ensuring reliable performance.

Package Style (Meter)

SMALL OUTLINE - The small outline package style offers space-saving benefits, making this transistor suitable for applications with limited board space.

Field Effect Transistor Technology

METAL-OXIDE SEMICONDUCTOR - This advanced technology provides efficient and reliable transistor operation, delivering excellent performance and energy efficiency.

Maximum Operating Temperature

175 °C - With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for applications that require reliable performance in harsh environments.

Transistor Element Material

SILICON - Silicon is a widely-used semiconductor material that ensures reliable and consistent transistor performance, making it a preferred choice in various applications.

Terminal Finish

MATTE TIN - The matte tin terminal finish ensures a durable and corrosion-resistant surface, preserving the transistor's electrical connections over a prolonged period.

Maximum Drain-Source On Resistance

0.18 ohm - This low resistance allows for efficient current flow and minimizes power loss, enhancing the overall performance and energy efficiency of the transistor.

Terminal Position

SINGLE - Featuring a single terminal position, this transistor facilitates easy and straightforward connections, simplifying the overall circuit design.

Moisture Sensitivity Level (MSL)

1 - With an MSL rating of 1, this transistor can withstand standard levels of moisture exposure, ensuring reliable performance in various environments.

Case Connection

DRAIN - The drain case connection allows for efficient heat dissipation, maintaining optimal operating temperatures and ensuring the transistor's longevity.

Maximum Time At Peak Reflow Temperature (s)

30 - This specification defines the time duration the transistor can withstand peak reflow temperature during the soldering process, guaranteeing reliable and consistent connections.

Peak Reflow Temperature °C

260 - The high peak reflow temperature rating enables safe and efficient soldering, ensuring reliable connections between the transistor and the circuit board.

Technical Specifications

Power Field Effect Transistors (FET) NTD2955T4G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

216 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

12 A

Maximum Drain Current (ID):

12 A

Maximum Drain-Source On Resistance:

.18 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

18 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTD2955T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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