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NTD20N06LT4G

Onsemi

NTD20N06LT4G by Onsemi

NTD20N06LT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.048 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. With a max power dissipation of 60W and operating temperature up to 175°C, it's ideal for high-power circuits.

Median Price

$0.611

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6,124 parts In-Stock

1+ parts

$1.210

100+ parts

$0.496

1k+ parts

$0.348

10k+ parts

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6,124

$1.210

$0.496

$0.348

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Arrow

USA . 12,500 parts In-Stock

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$0.466

12,500

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$0.466

Verical

USA . 2,428 parts In-Stock

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$0.569

10k+ parts

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2,428

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-

$0.569

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Rochester

USA . 1 parts In-Stock

1+ parts

-

100+ parts

$0.653

1k+ parts

$0.542

10k+ parts

$0.483

1

-

$0.653

$0.542

$0.483

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 781 parts In-Stock

1+ parts

$0.508

100+ parts

-

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781

$0.508

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Nova Conductors

Japan . 550 parts In-Stock

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$0.626

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550

$0.626

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TME

Poland . 14 parts In-Stock

1+ parts

$1.057

100+ parts

$0.701

1k+ parts

$0.634

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14

$1.057

$0.701

$0.634

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Chip Stock

USA . 26,000 parts In-Stock

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Vyrian

USA . 4,249 parts In-Stock

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4,249

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Flip Electronics

USA . 2,500 parts In-Stock

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2,500

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Micros

Poland . 2,480 parts In-Stock

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$1.780

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2,480

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$1.780

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Partservice

France . 2,480 parts In-Stock

1+ parts

-

100+ parts

$0.835

1k+ parts

$0.627

10k+ parts

$0.627

2,480

-

$0.835

$0.627

$0.627

Micros sp.j. W. Kędra i J. Lic

Poland . 2,480 parts In-Stock

1+ parts

-

100+ parts

$0.895

1k+ parts

$0.672

10k+ parts

$0.672

2,480

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$0.895

$0.672

$0.672

Microfarads

USA . 227 parts In-Stock

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227

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ComSIT Distribution GmbH

Germany . 149 parts In-Stock

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149

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Bristol Electronics

USA . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 3,828 parts In-Stock

1+ parts

$0.396

100+ parts

-

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3,828

$0.396

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Semicontronic

India . 3,769 parts In-Stock

1+ parts

$0.396

100+ parts

$0.386

1k+ parts

$0.384

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3,769

$0.396

$0.386

$0.384

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Corohmni

South Africa . 302 parts In-Stock

1+ parts

$0.466

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302

$0.466

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Corphita

USA . 1,158 parts In-Stock

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$0.482

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1,158

$0.482

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Continental Prestige Electronics

USA . 5,854 parts In-Stock

1+ parts

$0.626

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$0.613

5,854

$0.626

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$0.613

Argo Parts USA

USA . 4,390 parts In-Stock

1+ parts

$0.626

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$0.607

4,390

$0.626

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$0.607

Benley Electronics

USA . 7 parts In-Stock

1+ parts

$0.750

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7

$0.750

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Aztec Data Supply Inc.

USA . 3,193 parts In-Stock

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$1.750

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3,193

$1.750

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Microchip USA

USA . 183 parts In-Stock

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$3.339

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$3.339

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Perfect Parts

USA . 52,167 parts In-Stock

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52,167

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Metaverse IC Inc.

Canada . 50,000 parts In-Stock

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RC Electronics

USA . 41,964 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,290 parts In-Stock

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Lixinc

USA . 17,163 parts In-Stock

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TANS Electronics

Latvia . 7,886 parts In-Stock

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7,886

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iodParts Technologies Inc.

India . 6,625 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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Kulean Microsystems

USA . 4,146 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 2,500 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,100 parts In-Stock

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2,100

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SupplyDigital Components

Austria . 822 parts In-Stock

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822

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UHIMA Technologies

Türkiye . 792 parts In-Stock

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792

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Problanco Electronics

Mexico . 751 parts In-Stock

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Futuretech Components

Singapore . 700 parts In-Stock

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Overview

Enhance your power switching applications with the NTD20N06LT4G Power Field Effect Transistor by Onsemi. With a high-quality build and cutting-edge technology, this N-CHANNEL transistor offers reliability and efficiency like no other. Perfect for various electronic devices, this FET provides enhanced performance and maximum power dissipation, making it an invaluable asset to any project. Trust Onsemi to deliver top-of-the-line components that exceed expectations in every way. Upgrade your designs with the NTD20N06LT4G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used in power FETs due to its high thermal conductivity and excellent insulation properties.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-resistance and higher efficiency compared to P-channel FETs, making them suitable for many power switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps to protect the FET from inductive kickback voltages in switching applications, increasing reliability and circuit protection.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET provides fast and efficient switching for various power circuit designs.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and providing a more reliable connection compared to through-hole components.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this FET can handle higher voltages safely, making it suitable for a variety of power applications.

Package Shape: RECTANGULAR

Rectangular packages are easy to handle and provide good board space utilization, making them ideal for compact circuit designs.

Terminal Form: GULL WING

Gull wing terminals provide easy and reliable solder connections, ensuring a strong bond between the FET and the PCB.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer easy control of the device by applying a positive voltage, allowing for simple circuit design and operation.

Maximum Pulsed Drain Current (IDM): 60 A

With a high pulsed drain current rating, this FET can handle short bursts of high current, making it suitable for applications with high peak power requirements.

Technical Specifications

Power Field Effect Transistors (FET) NTD20N06LT4G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

128 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

20 A

Maximum Drain Current (ID):

20 A

Maximum Drain-Source On Resistance:

.048 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

60 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTD20N06LT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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