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FDD8424H_F085A

Onsemi

FDD8424H_F085A by Onsemi

FDD8424H_F085A by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL polarity. It features 40V DS breakdown voltage, 55A max pulsed drain current, and 0.024 ohm max drain-source resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance.

Median Price

$1.188

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 558 parts In-Stock

1+ parts

$0.450

100+ parts

$0.440

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$0.430

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-

558

$0.450

$0.440

$0.430

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Adafruit Industries

USA . 5,000 parts In-Stock

1+ parts

$1.926

100+ parts

$1.830

1k+ parts

$1.830

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-

5,000

$1.926

$1.830

$1.830

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Distributors (In-Stock)

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Digiode

USA . 1,887 parts In-Stock

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$0.428

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1,887

$0.428

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Chip Stock

USA . 33,720 parts In-Stock

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33,720

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Vyrian

USA . 2,325 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Semicontronic

India . 5,319 parts In-Stock

1+ parts

$0.383

100+ parts

$0.373

1k+ parts

$0.372

10k+ parts

-

5,319

$0.383

$0.373

$0.372

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Ampacity Inc.

Singapore . 2,343 parts In-Stock

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$0.383

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-

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2,343

$0.383

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Corphita

USA . 2,139 parts In-Stock

1+ parts

$0.405

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-

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2,139

$0.405

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Corohmni

South Africa . 245 parts In-Stock

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$0.450

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245

$0.450

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Aztec Data Supply Inc.

USA . 1,169 parts In-Stock

1+ parts

$1.190

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1,169

$1.190

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Advanced Electronics

New Zealand . 10,000 parts In-Stock

1+ parts

$1.926

100+ parts

$1.830

1k+ parts

$1.830

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10,000

$1.926

$1.830

$1.830

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,881 parts In-Stock

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Problanco Electronics

Mexico . 6,989 parts In-Stock

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Kulean Microsystems

USA . 6,651 parts In-Stock

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TANS Electronics

Latvia . 6,316 parts In-Stock

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Continental Prestige Electronics

USA . 5,354 parts In-Stock

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5,354

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Lucentia Tech

USA . 2,670 parts In-Stock

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$1.530

1k+ parts

$1.499

10k+ parts

$1.499

2,670

-

$1.530

$1.499

$1.499

Perfect Parts

USA . 2,353 parts In-Stock

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2,353

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Supply Digital

USA . 1,705 parts In-Stock

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1,705

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SupplyDigital Components

Austria . 1,461 parts In-Stock

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1,461

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Robosynatics

Brazil . 1,335 parts In-Stock

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$1.530

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$1.499

10k+ parts

$1.499

1,335

-

$1.530

$1.499

$1.499

UHIMA Technologies

Türkiye . 778 parts In-Stock

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778

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Bastille Electronics

Australia . 40 parts In-Stock

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40

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Argo Parts USA

USA . 27 parts In-Stock

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Modulus Dynamics

Lithuania . 21 parts In-Stock

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Overview

Unlock the power of innovation with the FDD8424H_F085A by Onsemi. As a leading manufacturer in the industry, Onsemi delivers exceptional quality and reliability in their Power Field Effect Transistors (FET). Ideal for switching applications, this transistor offers a common drain configuration with 2 elements and a built-in diode for added efficiency. With features like a minimum DS breakdown voltage of 40V and a maximum pulsated drain current of 55A, this product provides outstanding performance. Experience seamless operation and enhanced functionality with the FDD8424H_F085A, setting a new standard in power transistor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, providing protection to the internal components.

Minimum DS Breakdown Voltage: 40 V

The high breakdown voltage allows for efficient performance and reliability in high voltage applications.

Maximum Pulsed Drain Current (IDM): 55 A

The high pulsed drain current rating ensures the FET can handle peak current demands without overheating or failing.

Maximum Power Dissipation (Abs): 35 W

The high power dissipation rating indicates the FET can handle heat dissipation effectively, improving overall reliability.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for the FET to operate in a wide range of environments without overheating.

Technical Specifications

Power Field Effect Transistors (FET) FDD8424H_F085A attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

29 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

20 A

Maximum Drain Current (ID):

9 A

Maximum Drain-Source On Resistance:

.024 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252AD

JESD-30 Code:

R-PSSO-G4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

55 A

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDD8424H_F085A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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