Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
NTD2955G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 36A IDM, and 0.18 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 55W. The transistor has a SILICON element material and can withstand temperatures up to 175°C.
Median Price
$1.034
Lifecycle Status
Suppliers In-Stock
19
In-Stock Inventory
1k+
Flip Electronics (Authorized)
1+ parts
-
100+ parts
1k+ parts
10k+ parts
Nova Conductors
$0.359
Forefront Electronics and Design
$3.680
Chip Stock
Flip Electronics
Vyrian
Sternenhof Electronics
Digiode
ComSIT Distribution GmbH
Bristol Electronics
Atlantic Semiconductor
Sea View Technologies
Ashlea Components Ltd
Sensible Micro Corp
$0.954
ACDS - Activité Composants Distribution Service
QIE Inc.
Cyclops Electronics Ltd
EMSNET
Q Components
Continental Prestige Electronics
$0.207
$0.203
Argo Parts USA
$0.201
Advanced Electronics
$0.211
Benley Electronics
$0.300
Corohmni
$0.351
Netroflash
Aztec Data Supply Inc.
$1.690
AZTECH Wire
$16.910
Semicontronic
$30.050
$29.299
$29.148
Ampacity Inc.
$56.050
Authorized Procurement Solutions
Kepictronics
A-Z Elektronik GmbH
Lixinc
Corphita
Kulean Microsystems
TANS Electronics
SupplyDigital Components
Problanco Electronics
UHIMA Technologies
Perfect Parts
Cyclops Electronics Ltd (Excess)
Glotronic Ltd.
Plastic/epoxy packaging provides durability and protection for the transistor, ensuring long-term reliability.
P-channel FETs have lower on-resistance and can handle higher current compared to N-channel FETs, making them suitable for power applications.
Built-in diode allows for faster switching speeds and better efficiency in applications where reverse current flow needs to be managed.
Designed for switching applications, offering high efficiency and fast response times.
Surface mount package allows for easy and convenient PCB assembly, saving space and reducing overall product size.
High breakdown voltage ensures reliable operation in high voltage applications, providing a safety margin for the device.
High pulsed drain current rating allows the FET to handle large current spikes without damage, making it suitable for high-power applications.
High power dissipation rating ensures the FET can handle high power levels without overheating, improving its overall reliability.
Wide operating temperature range allows the FET to be used in various environmental conditions, enhancing its versatility.
Power Field Effect Transistors (FET) NTD2955G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
NTD2955G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
PCN Obsolescence/ EOL - Multiple Devices 27/Jun/2014
PCN Assembly/Origin - TMOS7 Wafer Fab Expansion 04/Dec/2013
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
BAV99
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Surge Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MICRODIODE ELECTRONICS SHENZHEN CO LTD
M24308/2-1F
Air Electro
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; MIL Conformity: YES; Additional Features: STANDARD: MIL-DTL-24308;
2N2222A
Hi-tron Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Eic Semiconductor
1N4148WS
Rugao Dachang Electronic
Baneasa S A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;
Semitron
RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;
CRCW080510K0FKEA
Vishay Intertechnology
Vishay Intertechnology's CRCW080510K0FKEA is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 reference standard compliance and -55 to 155 °C operating temperature range.
LL4148
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;
Taitron Components
Motorola
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; JESD-609 Code: e0;
B340A-13-F
Diodes Incorporated
B340A-13-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 3A max output current, and 0.5V max forward voltage. It is used for efficiency applications in electronics due to its small outline package and high operating temperature range of -55°C to 150°C.
M39029/56-351
TE Connectivity
TE Connectivity's M39029/56-351 is a CRIMP contact type backshell accessory with rated voltage of 115V. It operates b/w -65 to 175 °C, suitable for MIL-C-39029/56 connectors with wire gauge ranging from 28 to 22 AWG. Ideal for military applications requiring female contacts and copper alloy material.
SS14
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM7805CT
Silicon Group
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;
PIC18F4550-I/ML
Microchip Technology
The Microchip Technology PIC18F4550-I/ML is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this chip offers efficient performance in compact designs.
NDT2955
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;
SPW47N60C3
Infineon Technologies
SPW47N60C3 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a Max Drain Current of 47A and 0.07 ohm On Resistance, suitable for high-power applications. Ideal for use in power supplies, motor control, and industrial equipment due to its high current handling capabilities.
G3R160MT12J
Genesic Semiconductor
Power Field-Effect Transistors;
SPP08N80C3XKSA1
SPP08N80C3XKSA1 by Infineon Technologies is a power FET with a min DS breakdown voltage of 800V. It has a max pulsed drain current of 24A and an avalanche energy rating of 340mJ. This N-channel transistor is commonly used in applications requiring high voltage and current handling capabilities.
IRLML6401
International Rectifier
IRLML6401 by International Rectifier is a P-CHANNEL FET with 12V DS Breakdown Voltage and 34A IDM. Ideal for SWITCHING applications, it features a built-in diode, 33mJ EAS rating, and -55 to 150 °C operating temperature range.
STL60N10F7
STMicroelectronics
Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IRF7103TRPBF-1
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
G3R75MT12D
G3R75MT12D by Genesic Semiconductor is a N-CHANNEL FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 70A and EAS of 199mJ, this ENHANCEMENT MODE transistor operates b/w -55 to 175 °C, with 0.097 ohm RDS(on) and 182W power dissipation in a RECTANGULAR package.
IRF3205ZLPBF
IRF3205ZLPBF by Infineon is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 440A IDM. Ideal for SWITCHING applications, it features a 0.0065 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE. With a max power dissipation of 170W, this transistor is designed for high-performance electronic systems.
SI7439DP-T1-GE3
Vishay Intertechnology's SI7439DP-T1-GE3 is a P-CHANNEL FET for switching applications. Features include 150V DS breakdown voltage, 50A pulsed drain current, and 0.09 ohm max on-resistance. Ideal for power management in devices requiring high efficiency and reliability.
SI7116DN-T1-E3
SI7116DN-T1-E3 by Vishay Intertechnology is an N-CHANNEL FET with 40V DS Breakdown Voltage, 60A IDM, and 0.0078 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 3.8W.
SI2319CDS-T1-BE3
SI2319CDS-T1-BE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 20A IDM, and 0.077 ohm Drain-Source On Resistance. With ENHANCEMENT MODE operation, this MOSFET has a max power dissipation of 2.5W in a SMALL OUTLINE package suitable for surface mount assemblies.
IRF7420TRPBF
IRF7420TRPBF by Infineon is a P-CHANNEL FET with 12V DS Breakdown Voltage and 46A IDM. Ideal for SWITCHING applications, it has a single configuration with built-in diode in a small outline package. Operating from -55 to 150 °C, it offers 0.014 ohm Drain-Source On Resistance and 2.5W Power Dissipation.
IRLML9301TRPBF
Infineon's IRLML9301TRPBF is a P-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 15A IDM, and 0.064 ohm RDS(ON). With a small outline package style, it operates b/w -55 to 150 °C and has a max power dissipation of 1.3W.
IRF530PBF-BE3
IRF640
Vishay Intertechnology's IRF640 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 125W and operates in ENHANCEMENT MODE. Suitable for various electronic devices requiring high current switching capabilities.
SUD50P08-25L-E3
Vishay Intertechnology's SUD50P08-25L-E3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 40A IDM, and 0.0252 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 175°C.
CSD18563Q5AT
Texas Instruments
CSD18563Q5AT by Texas Instruments is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 96A IDM and 146mJ EAS, operating in the -55 to 150 °C temperature range. This SINGLE transistor has a 0.0108 ohm Drain-Source Resistance and comes in a SMALL OUTLINE package style.
NTMFS5C604NLT1G
Onsemi
NTMFS5C604NLT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 900A IDM, and 0.0017 ohm RDS(on). It is used in power applications due to its 200W max power dissipation, -55 to 175 °C operating temp range, and built-in diode configuration.
IRLML6402TR
IRLML6402TR by International Rectifier is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22A IDM and 0.065 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a built-in diode, making it suitable for various power management tasks.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
NTD2955T4G
NTD2955T4G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 18A.
NTD20P06LT4G
NTD20P06LT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 50A IDM, and 0.15 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 54W.
NTD24N06LT4G
NTD24N06LT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 24A ID, and 0.045 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max IDM of 72A and EAS of 162mJ.
NTD20N06LT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; No. of Terminals: 2; Maximum Time At Peak Reflow Temperature (s): 30;
NTD2955-1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Transistor Element Material: SILICON; Package Style (Meter): IN-LINE;
NTD2955T4
NTD2955T4 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 36A IDM, 216mJ EAS, and 0.18 ohm RDS(ON). With a max power dissipation of 55W and operating temperature up to 150°C, it's suitable for various high-power electronic designs.
NTD2955PT4G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; JESD-30 Code: R-PSSO-G2; Terminal Form: GULL WING;
NTD20P06LG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; Minimum DS Breakdown Voltage: 60 V; Terminal Position: SINGLE;
NTD2955
NTD2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 36A and EAS of 216mJ, operating in ENHANCEMENT MODE. With a package style of SMALL OUTLINE and 0.18 ohm RDS(on), it offers high performance in various electronic designs.
NTD20N06T4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;
NTD25P03LT4G
NTD25P03LT4G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 75A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode in a small outline package style. Operating in enhancement mode, it has 0.08 ohm Drain-Source On Resistance and can handle up to 75W power dissipation.
NTD2955-001
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Qualification: Not Qualified; Maximum Drain Current (Abs) (ID): 12 A;
NTD20N03L27T4G
NTD20N03L27T4G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a 0.031 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE at up to 150°C.
NTD20P06LT4
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; No. of Elements: 1; Terminal Finish: TIN LEAD;
NTD20P06L
NTD20P06L by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 50A.
NTD20P06L-1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 54 W; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
NTD20N06T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 175 Cel;
NTD20N06-1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE;
NTD20N06LT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; Maximum Operating Temperature: 175 Cel; Case Connection: DRAIN;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved