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IRF3205ZLPBF

Infineon Technologies

IRF3205ZLPBF by Infineon Technologies

IRF3205ZLPBF by Infineon is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 440A IDM. Ideal for SWITCHING applications, it features a 0.0065 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE. With a max power dissipation of 170W, this transistor is designed for high-performance electronic systems.

Median Price

$1.270

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,925 parts In-Stock

1+ parts

$1.580

100+ parts

$0.958

1k+ parts

$0.724

10k+ parts

-

1,925

$1.580

$0.958

$0.724

-

Adafruit Industries

USA . 3,000 parts In-Stock

1+ parts

$1.721

100+ parts

$1.635

1k+ parts

$1.635

10k+ parts

-

3,000

$1.721

$1.635

$1.635

-

Element14

Singapore . 1,953 parts In-Stock

1+ parts

$2.380

100+ parts

$1.580

1k+ parts

$1.070

10k+ parts

$1.050

1,953

$2.380

$1.580

$1.070

$1.050

Arrow

USA . 3,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.771

3,900

-

-

-

$0.771

Verical

USA . 3,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.960

10k+ parts

$0.856

3,900

-

-

$0.960

$0.856

Rochester

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.926

1k+ parts

$0.768

10k+ parts

$0.685

100

-

$0.926

$0.768

$0.685

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 894 parts In-Stock

1+ parts

$0.721

100+ parts

-

1k+ parts

-

10k+ parts

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894

$0.721

-

-

-

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.934

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$0.934

-

-

-

TME

Poland . 5 parts In-Stock

1+ parts

$1.520

100+ parts

$1.090

1k+ parts

$1.010

10k+ parts

-

5

$1.520

$1.090

$1.010

-

Vyrian

USA . 2,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,860

-

-

-

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Connector Distribution Corp

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

-

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-

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1,600

-

-

-

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Right Parts Inc.

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

-

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1,600

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,970 parts In-Stock

1+ parts

$0.650

100+ parts

-

1k+ parts

-

10k+ parts

-

2,970

$0.650

-

-

-

Semicontronic

India . 2,922 parts In-Stock

1+ parts

$0.650

100+ parts

$0.634

1k+ parts

$0.630

10k+ parts

-

2,922

$0.650

$0.634

$0.630

-

Corphita

USA . 243 parts In-Stock

1+ parts

$0.683

100+ parts

-

1k+ parts

-

10k+ parts

-

243

$0.683

-

-

-

Argo Parts USA

USA . 2,034 parts In-Stock

1+ parts

$0.848

100+ parts

-

1k+ parts

-

10k+ parts

-

2,034

$0.848

-

-

-

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.915

100+ parts

-

1k+ parts

$0.878

10k+ parts

-

2,000

$0.915

-

$0.878

-

Aztec Data Supply Inc.

USA . 1,141 parts In-Stock

1+ parts

$1.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,141

$1.000

-

-

-

Modulus Dynamics

Lithuania . 6,284 parts In-Stock

1+ parts

$1.042

100+ parts

$1.000

1k+ parts

$0.959

10k+ parts

-

6,284

$1.042

$1.000

$0.959

-

Corohmni

South Africa . 264 parts In-Stock

1+ parts

$1.122

100+ parts

-

1k+ parts

-

10k+ parts

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264

$1.122

-

-

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Continental Prestige Electronics

USA . 5,980 parts In-Stock

1+ parts

$1.310

100+ parts

$0.954

1k+ parts

$0.582

10k+ parts

-

5,980

$1.310

$0.954

$0.582

-

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$1.721

100+ parts

$1.635

1k+ parts

$1.635

10k+ parts

-

3,000

$1.721

$1.635

$1.635

-

RC Electronics

USA . 30,128 parts In-Stock

1+ parts

-

100+ parts

$0.980

1k+ parts

$0.890

10k+ parts

$0.860

30,128

-

$0.980

$0.890

$0.860

Authorized Procurement Solutions

USA . 6,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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6,500

-

-

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A-Z Elektronik GmbH

Germany . 5,874 parts In-Stock

1+ parts

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5,874

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Perfect Parts

USA . 5,237 parts In-Stock

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5,237

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Microchip USA

USA . 5,047 parts In-Stock

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5,047

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Lixinc

USA . 4,390 parts In-Stock

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4,390

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Alle Elektronik GmbH

Germany . 3,916 parts In-Stock

1+ parts

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3,916

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-

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Glotronic Ltd.

UK . 3,120 parts In-Stock

1+ parts

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100+ parts

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3,120

-

-

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Robosynatics

Brazil . 500 parts In-Stock

1+ parts

-

100+ parts

$0.467

1k+ parts

$0.467

10k+ parts

$0.467

500

-

$0.467

$0.467

$0.467

Lucentia Tech

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.467

1k+ parts

$0.467

10k+ parts

$0.467

500

-

$0.467

$0.467

$0.467

Kepictronics

USA . 424 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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424

-

-

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Overview

Unleash the power of innovation with the IRF3205ZLPBF by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Power Field Effect Transistors (FET) that are ideal for a variety of switching applications. With its N-CHANNEL design and single configuration featuring a built-in diode, this transistor offers enhanced performance and reliability. From its high DS Breakdown Voltage to its low On Resistance, this product provides customers with superior efficiency and durability. Trust Infineon for cutting-edge technology that meets your power needs with excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material of the package ensures the transistor’s longevity and reliability.

Polarity or Channel Type: N-CHANNEL

The N-channel type allows for efficient switching applications in various electronics.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and enhances overall functionality.

Transistor Application: SWITCHING

Ideal for switching applications due to its efficient performance and fast response time.

Minimum DS Breakdown Voltage: 55 V

The high breakdown voltage provides a wide safety margin for voltage spikes and surges.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and integrate into different electronic systems.

Terminal Form: THROUGH-HOLE

The through-hole terminal form offers secure connections and ease of installation.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for precise control and improved efficiency.

Maximum Pulsed Drain Current (IDM): 440 A

The high pulsed drain current rating ensures the transistor can handle sudden surge currents effectively.

Avalanche Energy Rating (EAS): 250 mJ

The high avalanche energy rating makes this transistor suitable for high-energy applications.

Maximum Drain Current (Abs) (ID): 110 A

The high drain current rating ensures reliable performance under heavy loads.

No. of Terminals: 3

With three terminals, this transistor offers flexible connectivity options for various circuit designs.

Maximum Power Dissipation (Abs): 170 W

The high power dissipation capability allows the transistor to handle high-power applications efficiently.

Package Style (Meter): IN-LINE

The in-line package style offers a compact design for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The MOSFET technology provides high switching speeds and low power consumption.

Maximum Operating Temperature: 175 °C

With a high operating temperature range, this transistor can function reliably in diverse environments.

Transistor Element Material: SILICON

The use of silicon as the element material ensures excellent thermal and electrical properties.

Terminal Finish: MATTE TIN OVER NICKEL

The matte tin over nickel finish offers corrosion resistance and ensures long-term reliability.

Maximum Drain-Source On Resistance: 0.0065 ohm

The low on-resistance minimizes power losses and improves overall efficiency.

Terminal Position: SINGLE

The single terminal position simplifies wiring and installation processes.

Case Connection: DRAIN

The drain case connection enhances heat dissipation and improves overall thermal performance.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this transistor is easy to solder and install.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures secure soldering connections for robust performance.

Technical Specifications

Power Field Effect Transistors (FET) IRF3205ZLPBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (EAS):

250 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (Abs) (ID):

110 A

Maximum Drain Current (ID):

75 A

Maximum Drain-Source On Resistance:

.0065 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-262AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

440 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF3205ZLPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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