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FDMS86252L

Onsemi

FDMS86252L by Onsemi

FDMS86252L by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, 30A IDM, and 0.056 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 50W and can withstand temperatures up to 150°C.

Median Price

$2.220

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 60 parts In-Stock

1+ parts

$1.123

100+ parts

$1.067

1k+ parts

$1.067

10k+ parts

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60

$1.123

$1.067

$1.067

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Farnell

UK . 15,467 parts In-Stock

1+ parts

$2.220

100+ parts

$1.010

1k+ parts

$0.735

10k+ parts

-

15,467

$2.220

$1.010

$0.735

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Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

$2.830

100+ parts

$1.250

1k+ parts

$0.988

10k+ parts

$0.809

3,000

$2.830

$1.250

$0.988

$0.809

Newark

USA . 8,364 parts In-Stock

1+ parts

$3.140

100+ parts

$1.440

1k+ parts

$1.120

10k+ parts

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8,364

$3.140

$1.440

$1.120

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DigiKey

USA . 3,613 parts In-Stock

1+ parts

$3.150

100+ parts

$1.411

1k+ parts

$1.095

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3,613

$3.150

$1.411

$1.095

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Mouser Electronics

USA . 3,252 parts In-Stock

1+ parts

$3.150

100+ parts

$1.420

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3,252

$3.150

$1.420

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Flip Electronics (Authorized)

USA . 24,000 parts In-Stock

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24,000

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Element14

Singapore . 20,128 parts In-Stock

1+ parts

-

100+ parts

$1.422

1k+ parts

$1.258

10k+ parts

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20,128

-

$1.422

$1.258

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Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$1.304

1k+ parts

$1.072

10k+ parts

$0.876

3,000

-

$1.304

$1.072

$0.876

Rochester

USA . 5 parts In-Stock

1+ parts

-

100+ parts

$1.220

1k+ parts

$1.010

10k+ parts

$0.903

5

-

$1.220

$1.010

$0.903

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 958 parts In-Stock

1+ parts

$0.900

100+ parts

-

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958

$0.900

-

-

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$1.090

100+ parts

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100

$1.090

-

-

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TME

Poland . 2,418 parts In-Stock

1+ parts

$2.970

100+ parts

$1.380

1k+ parts

$1.160

10k+ parts

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2,418

$2.970

$1.380

$1.160

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Chip Stock

USA . 102,600 parts In-Stock

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Vyrian

USA . 11,915 parts In-Stock

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11,915

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

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$2.910

6,000

-

-

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$2.910

IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$2.735

3,000

-

-

-

$2.735

Flip Electronics

USA . 2,623 parts In-Stock

1+ parts

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2,623

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Semtec, LLC

USA . 80 parts In-Stock

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80

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ComSIT Distribution GmbH

Germany . 5 parts In-Stock

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 12,121 parts In-Stock

1+ parts

$0.800

100+ parts

$0.780

1k+ parts

$0.776

10k+ parts

-

12,121

$0.800

$0.780

$0.776

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Ampacity Inc.

Singapore . 11,895 parts In-Stock

1+ parts

$0.800

100+ parts

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11,895

$0.800

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Corphita

USA . 647 parts In-Stock

1+ parts

$0.852

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647

$0.852

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Corohmni

South Africa . 263 parts In-Stock

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$0.947

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263

$0.947

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Argo Parts USA

USA . 2,050 parts In-Stock

1+ parts

$1.085

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2,050

$1.085

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$1.090

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2,000

$1.090

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$1.123

100+ parts

$1.067

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$1.067

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60

$1.123

$1.067

$1.067

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Aztec Data Supply Inc.

USA . 3,849 parts In-Stock

1+ parts

$1.523

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3,849

$1.523

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Perfect Parts

USA . 72,146 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 25,698 parts In-Stock

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25,698

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Continental Prestige Electronics

USA . 14,610 parts In-Stock

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$1.250

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$0.851

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14,610

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$1.250

$0.851

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Glotronic Ltd.

UK . 12,000 parts In-Stock

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12,000

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Kulean Microsystems

USA . 8,187 parts In-Stock

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8,187

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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7,500

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TANS Electronics

Latvia . 6,708 parts In-Stock

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6,708

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GreenTree Electronics

Israel . 6,160 parts In-Stock

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6,160

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Problanco Electronics

Mexico . 3,783 parts In-Stock

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3,783

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Eastek

USA . 3,000 parts In-Stock

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SupplyDigital Components

Austria . 2,778 parts In-Stock

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2,778

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Supply Digital

USA . 2,757 parts In-Stock

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2,757

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Lixinc

USA . 1,425 parts In-Stock

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1,425

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UHIMA Technologies

Türkiye . 242 parts In-Stock

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Formix International (Excess)

India . 50 parts In-Stock

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Kepictronics

USA . 39 parts In-Stock

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Overview

Unleash the power of innovation with the FDMS86252L from Onsemi, a top-tier manufacturer known for superior quality and reliability. This N-channel Power FET with a built-in diode is perfect for switching applications, offering enhanced performance and efficiency. With a minimum DS breakdown voltage of 150V and a maximum power dissipation of 50W, this transistor is designed to handle the toughest tasks with ease. Whether you're looking to boost your device's performance or streamline your operations, the FDMS86252L delivers unmatched value and benefits that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material provides good thermal and electrical insulation, making the product safe and reliable for high voltage applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are commonly used for switching applications due to their lower resistance and faster switching speeds compared to P-channel FETs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps in protecting the circuit from reverse voltage spikes, making the product suitable for applications where back EMF is a concern.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast turn-on and turn-off times, making it ideal for power management and control in various electronic devices.

Surface Mount: YES

The surface mount capability allows for easy and compact PCB assembly, saving space and enabling efficient heat dissipation in electronic systems.

Minimum DS Breakdown Voltage: 150 V

With a high minimum breakdown voltage, this FET can safely handle higher voltages without breakdown, ensuring reliable operation in demanding applications.

Maximum Pulsed Drain Current (IDM): 30 A

The high maximum pulsed drain current rating allows for handling of short-duration high current spikes, making the FET suitable for applications with varying load requirements.

Maximum Power Dissipation (Abs): 50 W

The high power dissipation rating enables the FET to handle higher power levels without overheating, ensuring reliable operation under heavy load conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can operate efficiently in high-temperature environments, offering reliable performance in various operating conditions.

Technical Specifications

Power Field Effect Transistors (FET) FDMS86252L attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

73 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (Abs) (ID):

12 A

Maximum Drain Current (ID):

4.4 A

Maximum Drain-Source On Resistance:

.056 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MO-240AA

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

30 A

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDMS86252L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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