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IRLML2502PBF

International Rectifier

IRLML2502PBF by International Rectifier

IRLML2502PBF by International Rectifier is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 33A and ID of 4.2A, with 0.045 ohm RDS(ON). This ENHANCEMENT MODE transistor operates at up to 150°C, making it suitable for various power management tasks.

Median Price

$0.145

Lifecycle Status

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Nova Conductors

Japan . 50 parts In-Stock

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Chip Stock

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Vyrian

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CirComp Electronics, Inc.

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Semicontronic

India . 15,483 parts In-Stock

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$0.098

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$0.095

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Ampacity Inc.

Singapore . 22,683 parts In-Stock

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Argo Parts USA

USA . 4,532 parts In-Stock

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$0.135

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$0.131

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Continental Prestige Electronics

USA . 4,528 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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120

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$0.129

Modulus Dynamics

Lithuania . 1,000 parts In-Stock

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Corohmni

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Microchip USA

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Aztec Data Supply Inc.

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Advanced Electronics

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$1.787

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Lucentia Tech

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Perfect Parts

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Kepictronics

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Overview

Unleash the power of cutting-edge technology with the IRLML2502PBF Power FET from International Rectifier. Designed for switching applications, this N-channel transistor offers enhanced performance and reliability in a compact, surface-mount package. With a high DS breakdown voltage and low on-resistance, this FET delivers superior efficiency and precision control in a wide range of electronic devices. Trust International Rectifier for quality components that drive innovation and value for your projects. Elevate your designs with the IRLML2502PBF and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the FET, making it suitable for various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON-resistance and higher efficiency, making them ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode helps protect the circuit from reverse polarity, enhancing the reliability of the FET.

Transistor Application: SWITCHING

Designed for switching applications, ensuring efficient and reliable performance in various electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and space-saving installation on PCBs, improving overall product design.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this FET can handle higher voltages, making it suitable for a range of applications.

Maximum Pulsed Drain Current (IDM): 33 A

High pulsed drain current rating enables the FET to handle sudden surges of current, making it reliable for demanding applications.

Maximum Drain-Source On Resistance: 0.045 ohm

Low ON-resistance ensures minimal power loss and high efficiency in the FET when conducting current.

Maximum Power Dissipation (Abs): 1.25 W

Efficient power dissipation capability allows the FET to operate within safe temperature limits, enhancing its reliability.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures the FET can withstand elevated temperatures, suitable for a variety of environments.

Technical Specifications

Power Field Effect Transistors (FET) IRLML2502PBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

ULTRA LOW RESISTANCE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

4.2 A

Maximum Drain Current (ID):

4.2 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

33 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRLML2502PBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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