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FQB47P06TM_AM002

Fairchild Semiconductor

FQB47P06TM_AM002 by Fairchild Semiconductor

Fairchild Semiconductor's FQB47P06TM_AM002 is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 188A IDM, 820mJ EAS, and 0.026 ohm RDS(ON). With a max power dissipation of 160W and operating temperature up to 175°C, it offers reliable performance in various electronic systems.

Median Price

$3.330

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Nova Conductors

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Advanced Electronics

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Overview

Unleash the power of cutting-edge technology with the FQB47P06TM_AM002 by Fairchild Semiconductor. This P-CHANNEL Power Field Effect Transistor (FET) boasts top-notch quality and reliability, perfect for a wide range of switching applications. With a maximum drain current of 47A and a low on-resistance of 0.026 ohm, this transistor offers unparalleled performance and efficiency. Trust in Fairchild Semiconductor's years of expertise to deliver a product that exceeds expectations and provides exceptional value to customers seeking high-performance solutions. Elevate your projects with the FQB47P06TM_AM002 and experience a new level of power and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package offers good insulation properties, making the transistor more durable and less prone to damage.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their lower ON-state resistance, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the performance of the transistor in flyback and freewheeling circuits, offering better reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Suitable for automated assembly processes, making it easier to integrate into electronic circuit boards.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this FET can handle higher voltages, offering protection against electrical spikes.

Maximum Pulsed Drain Current (IDM): 188 A

Capable of handling high current pulses, making it suitable for applications with sudden surge currents.

Maximum Power Dissipation (Abs): 160 W

With a high power dissipation rating, this FET can handle higher power levels without overheating.

Maximum Operating Temperature: 175 °C

Operates efficiently at high temperatures, ensuring stability and reliability in various thermal conditions.

Technical Specifications

Power Field Effect Transistors (FET) FQB47P06TM_AM002 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

820 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

47 A

Maximum Drain Current (ID):

47 A

Maximum Drain-Source On Resistance:

.026 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

188 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQB47P06TM_AM002 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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