Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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FQB44N10TM by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 174A and EAS of 530mJ, making it suitable for high-power operations. With 0.039 ohm RDS(on) and 146W Pdiss, this MOSFET offers efficient performance in ENHANCEMENT MODE operation.
Median Price
$1.387
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DigiKey
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Rochester
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Digiode
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$0.744
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$0.850
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$0.906
Argo Parts USA
$0.909
Corphita
$0.972
Ampacity Inc.
$1.840
Advanced Electronics
Microchip USA
$7.084
Perfect Parts
Metaverse IC Inc.
QUARKTWIN TECHNOLOGY LTD
Lixinc
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TANS Electronics
Kulean Microsystems
Kepictronics
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Problanco Electronics
A-Z Elektronik GmbH
Continental Prestige Electronics
$0.980
Alle Elektronik GmbH
Assy Fe
UHIMA Technologies
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Plastic/Epoxy package body material makes the transistor lightweight and cost-effective.
N-channel type allows for efficient switching operations in various applications.
Built-in diode simplifies circuit design and enhances performance.
Designed for switching applications, ensuring reliable and efficient performance.
Surface mount capability enables easy and space-saving PCB integration.
High breakdown voltage ensures robustness and protection in high voltage applications.
Rectangular package shape allows for easy and compact placement on the PCB.
Gull wing terminal form facilitates easy soldering and assembly.
Enhancement mode operation offers high efficiency and fast switching speed.
High pulsed drain current capability for handling peak power demands.
High avalanche energy rating ensures reliability under transient conditions.
High maximum drain current rating for continuous operation without overheating.
Two terminals for simplified circuit connectivity.
High power dissipation capability for handling large power loads.
Small outline package style saves space on the PCB.
Metal-oxide semiconductor technology offers high performance and reliability.
High maximum operating temperature for reliable performance in challenging environments.
Silicon transistor element material ensures stability and durability.
Matte tin finish with annealing for improved solderability and conductivity.
High maximum drain current rating for reliable operation.
Low drain-source on resistance for efficient power transfer.
Single terminal position for simplified circuit connection.
Case connection at drain for easy integration in the circuit.
Allows for efficient soldering during assembly.
High peak reflow temperature capability for reliable soldering.
Power Field Effect Transistors (FET) FQB44N10TM attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
FQB44N10TM Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N7002-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
2N2222A
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
LM2931Z-5.0G
Onsemi
LM2931Z-5.0G by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V output voltage, 0.6V dropout voltage, and 0.1A output current. It is ideal for applications requiring stable power supply in temperature-sensitive environments due to its operating range of -40°C to 125°C.
M85049/85-08W02
Glenair
CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;
1N4148
Silicon Standard
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM317LMX/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Seated Height: 1.75 mm; Nominal Dropout Voltage-1: 3 V;
LM317BD2TG
LM317BD2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max load regulation of 5.8%. Operating temperature ranges from -40 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact designs.
2N7002
Sinyork
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
BAV99
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
General Semiconductor
ULN2803ADWRG4
Texas Instruments
ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.
STM32H753IIK6
STMicroelectronics
STM32H753IIK6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and peripherals like CAN, ETHERNET, and USB. Ideal for industrial applications requiring high-speed processing and extensive connectivity options.
STM32H743IIT6
STM32H743IIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications due to its wide temperature range (-40°C to 85°C) and various connectivity options (CAN, I2C, UART, USB).
RC0805FR-0710KL
Yageo
Yageo's RC0805FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. Ideal for applications requiring resistance to operate b/w -55°C to 155°C, such as in automotive electronics or industrial control systems. Features metal glaze/thick film technology and matte tin finish with nickel barrier.
M39029/58-360
Fct Electronic
CONNECTOR ACCESSORY; IEC Conformity: NO; Alternate Contact Sources: MILITARY; MIL Conformity: YES; Contact Gender: MALE; MIL-Connector Accessory Name: CONTACT;
SMBJ18CA
General Instrument
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
BSS138
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;
Transys Electronics
IRLML2244TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
FQB22P10TM
FQB22P10TM by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage, 88A IDM, and 0.125 ohm RDS. Ideal for SWITCHING applications, it features a built-in DIODE in a RECTANGULAR package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has an EAS of 710 mJ and can handle up to 125W power dissipation at 175°C.
SIRA01DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIRA01DP-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 150A IDM, 31.2mJ EAS, and 0.0049 ohm RDS(ON). Operating from -55 to 150 °C, it has a fast ton of 42ns and toff of 98ns in a small outline package.
FDS6982AS
FDS6982AS by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 ELEMENTS WITH BUILT-IN DIODE in a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE. With a Max Drain Current of 8.6A and 0.0135 ohm On Resistance, it offers efficient performance up to 150°C.
IRF7410TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 30;
FDS6680A
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
SI7252DP-T1-GE3
Vishay Intertechnology's SI7252DP-T1-GE3 is a N-channel Power FET with 100V DS breakdown voltage, ideal for switching applications. Featuring separate elements with built-in diode, it has 80A max pulsed drain current and 0.017 ohm max drain-source resistance. Its small outline package and matte tin finish make it suitable for surface mount designs.
BSC011N03LSTATMA1
Infineon Technologies
Infineon's BSC011N03LSTATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0014 ohm RDS(on), and 190mJ EAS. Its small outline package and DUAL terminals make it suitable for high-power ENHANCEMENT MODE operations.
FDML7610S
The Onsemi FDML7610S is an N-CHANNEL Power FET with 2 SERIES elements and built-in diode. It has a Max Drain Current of 60A, Min DS Breakdown Voltage of 30V, and Max Pulsed Drain Current of 40A. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 2.2W at a temperature up to 150°C.
JANTX2N6796
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Package Shape: ROUND; Transistor Application: SWITCHING;
BS170
Itt Components
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRFZ44NSTRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Drain Current (Abs) (ID): 49 A; Avalanche Energy Rating (EAS): 150 mJ;
IRLML6401TRPBF
IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
IRF640
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Avalanche Energy Rating (EAS): 580 mJ; Terminal Position: SINGLE;
BSC123N08NS3GATMA1
BSC123N08NS3GATMA1 by Infineon is a N-CHANNEL FET with 80V DS breakdown voltage and 220A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 66W. This MOSFET has a drain-source on resistance of 0.0123 ohm and can handle up to 150°C operating temperature.
RFD14N05LSM9A
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252AA; Qualification: Not Qualified; Maximum Turn Off Time (toff): 100 ns;
FQD12N20LTM_F085
FQD12N20LTM_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, 36A IDM, and 0.32 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 55W.
BSZ040N06LS5ATMA1
Infineon's BSZ040N06LS5ATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 160A IDM, 117mJ EAS, and 0.004 ohm RDS(on). The transistor operates in ENHANCEMENT MODE and has a -55°C Min Operating Temp.
IPT059N15N3ATMA1
IPT059N15N3ATMA1 by Infineon Technologies is a N-CHANNEL FET with 150V DS breakdown voltage, 620A IDM, and 0.0059 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 375W.
SQJ479EP-T1_GE3
Vishay Intertechnology's SQJ479EP-T1_GE3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 100A IDM, and 0.033 ohm RDS(ON). Ideal for power management applications in automotive electronics due to AEC-Q101 standard compliance.
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FQB47P06TM-AM002
FQB47P06TM-AM002 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, 188A IDM, and 0.026 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Features include 820mJ EAS, 160W Pdiss, and -55 to +175°C Temp Range.
FQB47P06TM_AM002
Fairchild Semiconductor's FQB47P06TM_AM002 is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 188A IDM, 820mJ EAS, and 0.026 ohm RDS(ON). With a max power dissipation of 160W and operating temperature up to 175°C, it offers reliable performance in various electronic systems.
FQB44N10TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 146 W; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
FQB4N80TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 2;
FQB46N15
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 210 W; JESD-30 Code: R-PSSO-G2; JESD-609 Code: e0;
FQB45N03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Case Connection: DRAIN; Terminal Position: SINGLE;
FQB44N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 146 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 100 V;
FQB44N08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 127 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FQB4N80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Transistor Element Material: SILICON; No. of Elements: 1;
FQB44N10TM_NL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 146 W; Avalanche Energy Rating (EAS): 530 mJ; Maximum Operating Temperature: 175 Cel;
FQB45N03LTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;
FQB4N20LTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; JESD-30 Code: R-PSSO-G2; Terminal Form: GULL WING;
FQB4N20TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; JESD-30 Code: R-PSSO-G2; No. of Terminals: 2;
FQB4N25TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; JESD-609 Code: e3; Transistor Element Material: SILICON;
FQB4N50TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; JEDEC-95 Code: TO-263AB; Terminal Position: SINGLE;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; JESD-30 Code: R-PSSO-G2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FQB4N90TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Terminal Finish: MATTE TIN; Operating Mode: ENHANCEMENT MODE;
FQB44N08TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 127 W; Avalanche Energy Rating (EAS): 450 mJ; Maximum Pulsed Drain Current (IDM): 176 A;
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