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BSS138K-13

Diodes Incorporated

BSS138K-13 by Diodes Incorporated

BSS138K-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, operating in enhancement mode. With 3 terminals and 0.31A max drain current, it offers high performance in small outline package style.

Median Price

$0.097

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 130,326 parts In-Stock

1+ parts

$0.270

100+ parts

$0.104

1k+ parts

$0.060

10k+ parts

-

130,326

$0.270

$0.104

$0.060

-

DigiKey

USA . 55,548 parts In-Stock

1+ parts

$0.270

100+ parts

$0.104

1k+ parts

$0.067

10k+ parts

$0.046

55,548

$0.270

$0.104

$0.067

$0.046

Newark

USA . 2,210 parts In-Stock

1+ parts

$0.328

100+ parts

$0.125

1k+ parts

$0.081

10k+ parts

-

2,210

$0.328

$0.125

$0.081

-

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$1.801

100+ parts

$1.711

1k+ parts

$1.711

10k+ parts

-

1,000

$1.801

$1.711

$1.711

-

Future Electronics

Canada . 510,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.031

510,000

-

-

-

$0.031

Arrow

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.026

10,000

-

-

-

$0.026

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.026

10,000

-

-

-

$0.026

Farnell

UK . 7,920 parts In-Stock

1+ parts

-

100+ parts

$0.097

1k+ parts

$0.052

10k+ parts

$0.051

7,920

-

$0.097

$0.052

$0.051

Element14

Singapore . 4,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.073

10k+ parts

$0.071

4,050

-

-

$0.073

$0.071

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.067

100+ parts

-

1k+ parts

-

10k+ parts

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300

$0.067

-

-

-

Vyrian

USA . 632,029 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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632,029

-

-

-

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NAC Semi

USA . 410,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.068

410,000

-

-

-

$0.068

TME

Poland . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.037

10,000

-

-

-

$0.037

VNN

France . 1,363 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,363

-

-

-

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Elcom Components

USA . 134 parts In-Stock

1+ parts

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134

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 694,983 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

-

694,983

$0.025

-

-

-

Semicontronic

India . 691,461 parts In-Stock

1+ parts

$0.025

100+ parts

$0.024

1k+ parts

$0.024

10k+ parts

-

691,461

$0.025

$0.024

$0.024

-

Continental Prestige Electronics

USA . 1,204 parts In-Stock

1+ parts

$0.060

100+ parts

-

1k+ parts

-

10k+ parts

$0.059

1,204

$0.060

-

-

$0.059

Argo Parts USA

USA . 160 parts In-Stock

1+ parts

$0.060

100+ parts

-

1k+ parts

-

10k+ parts

$0.059

160

$0.060

-

-

$0.059

Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.065

100+ parts

-

1k+ parts

$0.063

10k+ parts

-

100

$0.065

-

$0.063

-

Modulus Dynamics

Lithuania . 17,367 parts In-Stock

1+ parts

$0.636

100+ parts

$0.636

1k+ parts

$0.636

10k+ parts

-

17,367

$0.636

$0.636

$0.636

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Aztec Data Supply Inc.

USA . 350 parts In-Stock

1+ parts

$0.880

100+ parts

-

1k+ parts

-

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350

$0.880

-

-

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Corohmni

South Africa . 483 parts In-Stock

1+ parts

$1.760

100+ parts

-

1k+ parts

-

10k+ parts

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483

$1.760

-

-

-

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.801

100+ parts

$1.711

1k+ parts

$1.711

10k+ parts

-

1,000

$1.801

$1.711

$1.711

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Authorized Procurement Solutions

USA . 125,000 parts In-Stock

1+ parts

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100+ parts

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125,000

-

-

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Eastek

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

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$0.037

30,000

-

-

-

$0.037

iodParts Technologies Inc.

India . 20,000 parts In-Stock

1+ parts

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20,000

-

-

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Robosynatics

Brazil . 17,307 parts In-Stock

1+ parts

-

100+ parts

$1.375

1k+ parts

$1.347

10k+ parts

$1.347

17,307

-

$1.375

$1.347

$1.347

Lucentia Tech

USA . 17,307 parts In-Stock

1+ parts

-

100+ parts

$1.375

1k+ parts

$1.347

10k+ parts

$1.347

17,307

-

$1.375

$1.347

$1.347

Glotronic Ltd.

UK . 8,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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8,000

-

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 7,966 parts In-Stock

1+ parts

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100+ parts

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7,966

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Futuretech Components

Singapore . 6,200 parts In-Stock

1+ parts

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100+ parts

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6,200

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Overview

Elevate your circuit designs with the BSS138K-13 by Diodes Incorporated, a top-tier manufacturer known for delivering high-quality components. As part of the Small Signal Field Effect Transistors (FET) category, this N-CHANNEL transistor offers exceptional performance in switching applications. Its single configuration with built-in diode and enhancement mode operation make it a versatile choice for various projects. With a maximum power dissipation of 0.54W and a minimum DS breakdown voltage of 50V, this transistor ensures reliability and efficiency. Trust in Diodes Incorporated to provide you with the cutting-edge technology you need to take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good insulation properties and durability, ensuring reliable performance in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher mobility and conductivity, making them suitable for high-speed switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides additional protection against reverse voltage spikes, enhancing the reliability of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power consumption.

Surface Mount: YES

Surface mount packaging allows for easy integration into compact electronic devices, saving space on the PCB.

Minimum DS Breakdown Voltage: 50 V

With a high breakdown voltage, this transistor can handle higher voltages without breakdown, ensuring reliable operation in various circuit designs.

Package Shape: RECTANGULAR

Rectangular shape offers easy placement and alignment on the PCB, aiding in the manufacturing process.

Terminal Form: GULL WING

Gull wing terminals provide good mechanical strength and solderability, ensuring secure connections on the PCB.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are normally off and require a positive voltage to turn on, offering better control over the switching operation.

No. of Terminals: 3

Three terminals provide the necessary connections for the transistor to function effectively in the circuit.

Maximum Power Dissipation (Abs): 0.54 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating, increasing its reliability in operation.

Package Style (Meter): SMALL OUTLINE

Small outline packaging saves space on the PCB and allows for higher component density, ideal for compact electronic designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance and reliability in switching applications, making this transistor a reliable choice.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand elevated temperatures without compromising performance, suitable for various environments.

Transistor Element Material: SILICON

Silicon-based transistors offer good electrical properties and reliability, ensuring stable performance in different operating conditions.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this transistor can function effectively in cold environments without performance degradation.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable connections on the PCB.

Maximum Drain Current (ID): 0.31 A

With a high drain current rating, this transistor can handle moderate current levels, suitable for various switching applications.

Maximum Drain-Source On Resistance: 3.5 ohm

Low drain-source on resistance ensures efficient power handling and minimal voltage drop across the transistor, improving overall circuit performance.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options and easy integration into different circuit designs.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable solder joints during the assembly process, improving overall manufacturing quality.

Maximum Feedback Capacitance (Crss): 2.2 pF

Low feedback capacitance reduces signal distortion and improves high-frequency performance, making this transistor suitable for high-speed applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS138K-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (ID):

.31 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

2.2 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSS138K-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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