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BSS138NH6433XTMA1

Infineon Technologies

BSS138NH6433XTMA1 by Infineon Technologies

BSS138NH6433XTMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.36W power dissipation, and 3.5 ohm drain-source resistance. Ideal for small outline applications in automotive electronics due to AEC-Q101 reference standard compliance and -55 to 150 °C operating temperature range.

Median Price

$0.080

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 3,200 parts In-Stock

1+ parts

$0.309

100+ parts

$0.118

1k+ parts

$0.069

10k+ parts

-

3,200

$0.309

$0.118

$0.069

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Mouser Electronics

USA . 147,171 parts In-Stock

1+ parts

$0.350

100+ parts

$0.135

1k+ parts

$0.094

10k+ parts

$0.047

147,171

$0.350

$0.135

$0.094

$0.047

DigiKey

USA . 536 parts In-Stock

1+ parts

$0.390

100+ parts

$0.150

1k+ parts

$0.098

10k+ parts

$0.069

536

$0.390

$0.150

$0.098

$0.069

EBV Elektronik

Germany . 860,000 parts In-Stock

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RS (Exports)

UK . 250,000 parts In-Stock

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$0.052

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$0.052

Arrow

USA . 190,000 parts In-Stock

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$0.048

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$0.048

Verical

USA . 40,000 parts In-Stock

1+ parts

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$0.047

40,000

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$0.047

Avnet

USA . 20,000 parts In-Stock

1+ parts

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$0.031

20,000

-

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$0.031

Chip1Stop

Japan . 6,311 parts In-Stock

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$0.107

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6,311

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$0.107

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Element14

Singapore . 4,531 parts In-Stock

1+ parts

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100+ parts

$0.222

1k+ parts

$0.091

10k+ parts

$0.079

4,531

-

$0.222

$0.091

$0.079

Farnell

UK . 3,359 parts In-Stock

1+ parts

-

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$0.046

10k+ parts

$0.045

3,359

-

-

$0.046

$0.045

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.095

100+ parts

-

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100

$0.095

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Digiode

USA . 4 parts In-Stock

1+ parts

$0.180

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4

$0.180

-

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Ozdisan Elektronik

Türkiye . 135,086 parts In-Stock

1+ parts

$63.851

100+ parts

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135,086

$63.851

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NAC Semi

USA . 690,000 parts In-Stock

1+ parts

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$0.123

690,000

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$0.123

Vyrian

USA . 240,228 parts In-Stock

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240,228

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IBS Electronics

USA . 40,000 parts In-Stock

1+ parts

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$0.066

40,000

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$0.066

Chip Stock

USA . 16,330 parts In-Stock

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16,330

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Rutronik

Germany . 10,000 parts In-Stock

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$0.058

10,000

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$0.058

VNN

France . 2,644 parts In-Stock

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2,644

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ComSIT Distribution GmbH

Germany . 270 parts In-Stock

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270

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ComSIT USA

USA . 270 parts In-Stock

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270

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Rebound Electronics

UK . 170 parts In-Stock

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170

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Bristol Electronics

USA . 40 parts In-Stock

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40

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 262,325 parts In-Stock

1+ parts

$0.032

100+ parts

$0.031

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$0.031

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262,325

$0.032

$0.031

$0.031

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Ampacity Inc.

Singapore . 240,969 parts In-Stock

1+ parts

$0.070

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240,969

$0.070

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Argo Parts USA

USA . 4,406 parts In-Stock

1+ parts

$0.087

100+ parts

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1k+ parts

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10k+ parts

$0.084

4,406

$0.087

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$0.084

Corphita

USA . 644 parts In-Stock

1+ parts

$0.171

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644

$0.171

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Component Stockers USA

USA . 1,105,517 parts In-Stock

1+ parts

$0.360

100+ parts

$0.110

1k+ parts

$0.070

10k+ parts

$0.040

1,105,517

$0.360

$0.110

$0.070

$0.040

Corohmni

South Africa . 148 parts In-Stock

1+ parts

$1.084

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148

$1.084

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Aztec Data Supply Inc.

USA . 16,594 parts In-Stock

1+ parts

$1.430

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16,594

$1.430

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$1.482

100+ parts

$1.408

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$1.408

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60

$1.482

$1.408

$1.408

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Modulus Dynamics

Lithuania . 18,440 parts In-Stock

1+ parts

$1.700

100+ parts

$1.632

1k+ parts

$1.564

10k+ parts

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18,440

$1.700

$1.632

$1.564

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Perfect Parts

USA . 436,962 parts In-Stock

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436,962

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Glotronic Ltd.

UK . 136,000 parts In-Stock

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136,000

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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Continental Prestige Electronics

USA . 19,180 parts In-Stock

1+ parts

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100+ parts

$0.144

1k+ parts

$0.072

10k+ parts

$0.060

19,180

-

$0.144

$0.072

$0.060

Robosynatics

Brazil . 16,905 parts In-Stock

1+ parts

-

100+ parts

$0.735

1k+ parts

$0.720

10k+ parts

$0.720

16,905

-

$0.735

$0.720

$0.720

Lucentia Tech

USA . 16,905 parts In-Stock

1+ parts

-

100+ parts

$0.735

1k+ parts

$0.720

10k+ parts

$0.720

16,905

-

$0.735

$0.720

$0.720

RC Electronics

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.100

1k+ parts

$0.090

10k+ parts

$0.090

10,000

-

$0.100

$0.090

$0.090

iodParts Technologies Inc.

India . 5,340 parts In-Stock

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5,340

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Futuretech Components

Singapore . 2,080 parts In-Stock

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2,080

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GreenTree Electronics

Israel . 230 parts In-Stock

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230

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Netroflash

USA . 100 parts In-Stock

1+ parts

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100+ parts

$0.093

1k+ parts

$0.090

10k+ parts

$0.088

100

-

$0.093

$0.090

$0.088

Overview

Looking for a reliable Small Signal Field Effect Transistor (FET) that offers top-notch quality and performance? Look no further than the BSS138NH6433XTMA1 by Infineon Technologies. With its N-CHANNEL polarity, SINGLE configuration with built-in diode, and ENHANCEMENT MODE operating mode, this FET is perfect for a wide range of applications. From power management to signal amplification, this transistor will exceed your expectations with its high reliability and efficiency. Trust in Infineon Technologies to deliver cutting-edge technology that meets your needs and provides value that goes beyond just functionality. Elevate your projects with the BSS138NH6433XTMA1 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Offers efficient operation for certain circuit applications, making it suitable for specific designs.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode within the transistor, reducing the need for additional components.

Surface Mount: YES

Facilitates easy and convenient installation on PCBs, saving time and effort during assembly.

Minimum DS Breakdown Voltage: 60 V

Ensures reliable performance under varying input voltages, making it versatile for different applications.

Package Shape: RECTANGULAR

Allows for efficient space utilization on the PCB, enabling compact designs in constrained environments.

Terminal Form: GULL WING

Enhances soldering and connection reliability, contributing to the overall stability of the circuit.

Operating Mode: ENHANCEMENT MODE

Offers flexibility in controlling the transistor operation, enabling customization for specific circuit requirements.

No. of Terminals: 3

Simplifies circuit connection and layout, reducing complexity in the overall design.

Maximum Power Dissipation (Abs): 0.36 W

Ensures efficient heat dissipation, preventing overheating and maintaining the transistor's performance.

Package Style (Meter): SMALL OUTLINE

Facilitates easy integration into compact electronic devices, saving space and enabling sleek designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high efficiency and reliability in signal processing, ensuring optimal performance in various applications.

Maximum Power Dissipation Ambient: 0.36 W

Maintains stable operation even in varying ambient conditions, ensuring consistent performance over time.

Maximum Operating Temperature: 150 °C

Allows for operation in high-temperature environments, expanding the range of potential applications for the transistor.

Transistor Element Material: SILICON

Provides superior electrical properties and reliability, ensuring long-term functionality in demanding applications.

Minimum Operating Temperature: -55 °C

Enables operation in low-temperature environments, making the transistor suitable for a wide range of operating conditions.

Terminal Finish: MATTE TIN

Enhances soldering performance and reliability, ensuring secure connections for long-term usage.

Maximum Drain Current (ID): 0.23 A

Supports high current flow, making it suitable for applications that require robust performance.

Maximum Drain-Source On Resistance: 3.5 ohm

Ensures efficient power flow and minimal power loss, contributing to the overall energy efficiency of the circuit.

Terminal Position: DUAL

Facilitates easy and secure connection to the circuit, enhancing the overall reliability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during assembly, reducing the risk of component damage and ensuring a reliable connection.

Peak Reflow Temperature °C: 260

Enables efficient solder melting and joint formation during assembly, ensuring a secure connection for long-term usage.

Maximum Feedback Capacitance (Crss): 3.8 pF

Minimizes signal distortion and loss, ensuring accurate signal processing in various circuit applications.

Reference Standard: AEC-Q101; IEC-61249-2-21

Compliance with recognized standards ensures quality and reliability, making it a trusted choice for diverse applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS138NH6433XTMA1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

3.8 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.36 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-61249-2-21

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

BSS138NH6433XTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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