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ZVP2106ASTOA

Diodes Incorporated

ZVP2106ASTOA by Diodes Incorporated

ZVP2106ASTOA by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, 0.28A ID, and 5 ohm RDS(on). Ideal for switching applications, it features SILICON transistor element, ENHANCEMENT MODE operation, and METAL-OXIDE SEMICONDUCTOR technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 49,000 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Vyrian

USA . 374 parts In-Stock

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374

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ACDS - Activité Composants Distribution Service

France . 160 parts In-Stock

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160

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Holdelec - ElecDif-Pro

France . 160 parts In-Stock

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160

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 114 parts In-Stock

1+ parts

$0.912

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$0.912

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Advanced Electronics

New Zealand . 58 parts In-Stock

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$1.709

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$1.623

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$1.623

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58

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$1.623

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Aztec Data Supply Inc.

USA . 2,648 parts In-Stock

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$1.930

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$1.930

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AZTECH Wire

Italy . 374 parts In-Stock

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$18.621

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$18.621

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Semicontronic

India . 165 parts In-Stock

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$34.050

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$33.199

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$33.028

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165

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Component Stockers USA

USA . 342 parts In-Stock

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$99.990

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342

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Continental Prestige Electronics

USA . 5,706 parts In-Stock

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Argo Parts USA

USA . 3,732 parts In-Stock

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Robosynatics

Brazil . 950 parts In-Stock

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$2.108

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$2.108

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$2.108

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Lucentia Tech

USA . 950 parts In-Stock

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$2.108

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$2.108

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$2.108

950

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$2.108

$2.108

$2.108

Modulus Dynamics

Lithuania . 870 parts In-Stock

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870

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Discover the superior performance and reliability of the ZVP2106ASTOA by Diodes Incorporated, a leading manufacturer in the industry. This small signal field effect transistor is perfect for a variety of switching applications, offering unmatched quality and efficiency. With a focus on enhancing mode operation, this P-channel transistor delivers a minimum DS breakdown voltage of 60V and a maximum drain current of 0.28A. Trust in Diodes Incorporated to provide innovative solutions that exceed expectations and streamline your operations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching operations in electronic circuits.

Configuration: SINGLE

Simplifies circuit design and layout.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance.

Minimum DS Breakdown Voltage: 60 V

Suitable for applications requiring high voltage tolerance.

Package Shape: RECTANGULAR

Facilitates easy mounting on circuit boards.

Terminal Form: WIRE

Provides a convenient connection method for integration into circuits.

Operating Mode: ENHANCEMENT MODE

Enables precise control over the transistor's operation.

No. of Terminals: 3

Simple and straightforward connection setup.

Package Style (Meter): IN-LINE

Space-efficient design for compact circuits.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high efficiency and low power consumption.

Transistor Element Material: SILICON

Offers high performance and reliability.

Terminal Finish: MATTE TIN

Enhances solderability and conductivity.

Maximum Drain Current (ID): 0.28 A

Sufficient current handling capability for many applications.

Maximum Drain-Source On Resistance: 5 ohm

Low resistance for efficient switching operations.

Terminal Position: SINGLE

Simplifies connection setup.

Peak Reflow Temperature °C: 260

Capable of withstanding high temperatures during assembly processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVP2106ASTOA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.28 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVP2106ASTOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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