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ZVP2106AM1

Diodes Incorporated

ZVP2106AM1 by Diodes Incorporated

ZVP2106AM1 by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. Features 60V DS Breakdown Voltage, 0.28A ID, and 5Ω RDS(ON). Utilizes METAL-OXIDE SEMICONDUCTOR tech in a SMALL OUTLINE package with GULL WING terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,159 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Aztec Data Supply Inc.

USA . 758 parts In-Stock

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$0.720

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758

$0.720

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$0.751

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$0.713

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$0.713

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Corohmni

South Africa . 364 parts In-Stock

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$1.621

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364

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AZTECH Wire

Italy . 647 parts In-Stock

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$19.651

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Continental Prestige Electronics

USA . 6,751 parts In-Stock

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Modulus Dynamics

Lithuania . 750 parts In-Stock

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750

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Argo Parts USA

USA . 279 parts In-Stock

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Robosynatics

Brazil . 250 parts In-Stock

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250

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Lucentia Tech

USA . 250 parts In-Stock

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250

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Upgrade your electronic devices with the high-quality ZVP2106AM1 P-Channel Small Signal Field Effect Transistor by Diodes Incorporated. Known for their superior products, Diodes Incorporated delivers reliability and performance in every component they manufacture. Ideal for switching applications, this enhancement mode transistor offers a maximum drain current of 0.28 A and a minimum DS breakdown voltage of 60 V. With its surface mount capability and small outline package style, the ZVP2106AM1 provides convenience and efficiency in design and assembly. Trust Diodes Incorporated to provide the best solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and helps protect the transistor from external elements, making it a reliable choice for various applications.

Polarity or Channel Type: P-CHANNEL

The P-channel configuration allows for easy integration and operation in circuit designs, making this transistor versatile and user-friendly.

Configuration: SINGLE

With a single configuration, this transistor simplifies circuit design and ensures ease of installation, making it a convenient choice for applications requiring efficient switching.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and efficiency in controlling electronic circuits, making it a reliable choice for various projects.

Surface Mount: YES

The surface-mount capability of this transistor allows for easy installation on PCBs, saving time and effort in production, and making it a suitable choice for compact designs.

Minimum DS Breakdown Voltage: 60 V

With a high minimum breakdown voltage of 60V, this transistor can handle high voltages effectively, making it a safe and reliable choice for applications requiring robust performance.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact and space-saving design, allowing for efficient use of board space and making it suitable for tight layouts.

Terminal Form: GULL WING

The gull wing terminal form ensures secure connections and easy soldering, enhancing the reliability and longevity of the transistor in different applications.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode offers improved control and efficiency in circuit switching, making this transistor a dependable choice for various electronic projects.

No. of Terminals: 3

With three terminals, this transistor offers simple connectivity and compatibility with a wide range of circuit configurations, making it a versatile choice for different applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVP2106AM1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.28 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVP2106AM1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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