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NDS0605-F169

Onsemi

NDS0605-F169 by Onsemi

NDS0605-F169 by Onsemi is a P-CHANNEL small signal FET with 60V DS breakdown voltage. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max power dissipation of 0.36W and can withstand temperatures up to 150°C.

Median Price

$1.932

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 2,000 parts In-Stock

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$1.932

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$1.836

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$1.836

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2,000

$1.932

$1.836

$1.836

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Digiode

USA . 2,069 parts In-Stock

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$1.835

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2,069

$1.835

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Chip Stock

USA . 42,000 parts In-Stock

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Vyrian

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Flip Electronics

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Nova Conductors

Japan . 75 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,565 parts In-Stock

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$1.478

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$1.478

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Semicontronic

India . 1,864 parts In-Stock

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$1.640

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$1.599

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$1.591

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$1.599

$1.591

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Ampacity Inc.

Singapore . 1,718 parts In-Stock

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$1.640

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$1.640

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Corphita

USA . 1,976 parts In-Stock

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$1.739

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Corohmni

South Africa . 234 parts In-Stock

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$1.932

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234

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$1.932

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$1.836

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$1.836

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$1.932

$1.836

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AZTECH Wire

Italy . 172 parts In-Stock

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$19.890

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Kepictronics

USA . 306,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

Latvia . 7,095 parts In-Stock

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Kulean Microsystems

USA . 4,232 parts In-Stock

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Problanco Electronics

Mexico . 3,664 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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SupplyDigital Components

Austria . 2,462 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Robosynatics

Brazil . 450 parts In-Stock

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Lucentia Tech

USA . 450 parts In-Stock

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UHIMA Technologies

Türkiye . 12 parts In-Stock

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Overview

Discover the power and reliability of the NDS0605-F169 by Onsemi, a small signal field effect transistor (FET) that redefines performance. With its high-quality design and built-in diode, this P-channel transistor is perfect for a wide range of switching applications. From its enhanced mode operation to its high breakdown voltage of 60V, this FET delivers exceptional value and benefits to customers. Whether you're looking for efficiency or versatility, this product has it all. Experience the advantages of Onsemi's expertise and trust in their commitment to quality. Elevate your projects with the NDS0605-F169 and unlock limitless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching capabilities in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies the circuit design and enhances functionality by including a built-in diode.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance.

Surface Mount: YES

Facilitates easy installation on circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 60 V

Provides a high breakdown voltage for enhanced reliability and protection against voltage spikes.

Operating Mode: ENHANCEMENT MODE

Allows for precise control of the transistor's operation, improving overall efficiency.

Maximum Power Dissipation (Abs): 0.36 W

Can handle a relatively high power dissipation, suitable for various applications.

Package Style (Meter): SMALL OUTLINE

Compact package style that saves space and is suitable for small electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for efficient switching and low power consumption.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for demanding environments.

Transistor Element Material: SILICON

Utilizes silicon material for the transistor element, ensuring reliability and performance stability.

Maximum Drain Current (ID): 0.18 A

Can handle a maximum drain current, suitable for various circuit requirements.

Maximum Drain-Source On Resistance: 5 ohm

Low on-resistance value for efficient switching and minimal power loss.

Terminal Position: DUAL

Dual terminal positioning for easy connectivity and versatile circuit configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperature for a specified time period, ensuring proper soldering.

Peak Reflow Temperature °C: 260

Can handle high peak reflow temperature during assembly processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) NDS0605-F169 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.18 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NDS0605-F169 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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