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BSS138WQ-7-F

Diodes Incorporated

BSS138WQ-7-F by Diodes Incorporated

BSS138WQ-7-F by Diodes Inc. is a small signal N-channel FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max power dissipation of 0.2W and can handle a max drain current of 0.2A.

Median Price

$0.194

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 209 parts In-Stock

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$0.330

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$0.131

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$0.080

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209

$0.330

$0.131

$0.080

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Adafruit Industries

USA . 450 parts In-Stock

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$1.274

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$1.210

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$1.210

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$1.274

$1.210

$1.210

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Arrow

USA . 15,000 parts In-Stock

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$0.058

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$0.058

Verical

USA . 15,000 parts In-Stock

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Nova Conductors

Japan . 42 parts In-Stock

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$0.058

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IBS Electronics

USA . 42,000 parts In-Stock

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Chip Stock

USA . 15,000 parts In-Stock

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VNN

France . 5,786 parts In-Stock

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Vyrian

USA . 3,260 parts In-Stock

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Bristol Electronics

USA . 163 parts In-Stock

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$0.150

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$0.075

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163

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$0.150

$0.075

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Distributors (Availability)

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Semicontronic

India . 3,607 parts In-Stock

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$0.029

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$0.028

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$0.028

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3,607

$0.029

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Decca Corp

Germany . 3,326 parts In-Stock

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$0.029

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3,326

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Ampacity Inc.

Singapore . 3,263 parts In-Stock

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$0.029

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Continental Prestige Electronics

USA . 4,412 parts In-Stock

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$0.058

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$0.056

4,412

$0.058

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$0.056

Argo Parts USA

USA . 3,695 parts In-Stock

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$0.058

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$0.056

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Netroflash

USA . 100 parts In-Stock

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$0.058

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100

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Modulus Dynamics

Lithuania . 93 parts In-Stock

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$0.064

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$0.064

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$0.062

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93

$0.064

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Aztec Data Supply Inc.

USA . 1,230 parts In-Stock

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$0.963

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$0.963

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$1.274

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$1.210

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$1.210

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$1.274

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$1.210

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Corohmni

South Africa . 773 parts In-Stock

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$1.539

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QUARKTWIN TECHNOLOGY LTD

USA . 20,129 parts In-Stock

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Eastek

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Robosynatics

Brazil . 2,000 parts In-Stock

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$0.487

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Lucentia Tech

USA . 2,000 parts In-Stock

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$0.487

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$0.487

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Overview

Discover the BSS138WQ-7-F by Diodes Incorporated – the epitome of quality and innovation in small signal field effect transistors (FET). With a commitment to excellence, Diodes Incorporated has crafted this product to deliver superior performance and reliability. This N-channel transistor with a built-in diode is perfect for switching applications. Its surface mount capability, compact rectangular package shape, and gull wing terminals make installation a breeze. Experience enhanced efficiency and remarkable power dissipation with the BSS138WQ-7-F. Whether you're designing automotive electronics or industrial control systems, this versatile transistor is your go-to solution. Trust Diodes Incorporated for cutting-edge technology and maximize your design possibilities with the BSS138WQ-7-F!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and cost-effective, making the transistor easy to handle and suitable for mass production.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility, offering better performance for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and protection against reverse voltage.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in on/off states.

Surface Mount: YES

Suitable for surface mount technology, enabling easy installation on circuit boards and saving space.

Minimum DS Breakdown Voltage: 50 V

With a breakdown voltage of 50V, this transistor can handle higher voltages without damage.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on circuit boards and easy integration into various electronic devices.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and are commonly used in surface mount applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer fast switching speeds and lower on-resistance for improved performance.

No. of Terminals: 3

Simple 3-terminal design for easy integration into circuits and less complexity in wiring.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline packaging saves space on circuit boards and is ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance, low power consumption, and reliability.

Maximum Power Dissipation Ambient: 0.2 W

Even in ambient conditions, the transistor can handle a maximum power dissipation of 0.2W, ensuring stable operation.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments.

Transistor Element Material: SILICON

Silicon transistors offer high efficiency, speed, and compatibility with common electronic components.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55 °C, this transistor is suitable for use in cold environments or extreme conditions.

Maximum Drain Current (ID): 0.2 A

With a maximum drain current of 0.2A, this transistor can handle moderate current loads.

Maximum Drain-Source On Resistance: 3.5 ohm

Low drain-source on resistance of 3.5 ohms ensures efficient power transfer and minimal heat dissipation.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and ease of connection.

Maximum Feedback Capacitance (Crss): 8 pF

Low feedback capacitance of 8 pF ensures stability in high-frequency applications and minimizes signal distortion.

Reference Standard: AEC-Q101; UL RECOGNIZED

Compliant with industry standards, ensuring quality, reliability, and safety in automotive and electronic applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS138WQ-7-F attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

8 pF

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; UL RECOGNIZED

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSS138WQ-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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