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BSS123W-7-F

Diodes Incorporated

BSS123W-7-F by Diodes Incorporated

Diodes Inc.'s BSS123W-7-F is a N-channel FET with 100V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, 0.17A max drain current, and 6ohm max on resistance. Operating in enhancement mode, it has a max power dissipation of 0.2W and can withstand temperatures from -55 to 150°C.

Median Price

$0.108

Lifecycle Status

Suppliers In-Stock

37

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$0.102

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$0.097

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$0.097

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100

$0.102

$0.097

$0.097

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DigiKey

USA . 215 parts In-Stock

1+ parts

$0.370

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$0.141

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$0.092

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215

$0.370

$0.141

$0.092

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Verical

USA . 45,000 parts In-Stock

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$0.060

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$0.060

Arrow

USA . 6,000 parts In-Stock

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$0.060

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$0.060

Element14

Singapore . 3,255 parts In-Stock

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$0.143

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$0.119

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$0.117

3,255

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$0.143

$0.119

$0.117

Farnell

UK . 1,082 parts In-Stock

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$0.113

1k+ parts

$0.056

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$0.044

1,082

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$0.113

$0.056

$0.044

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 50 parts In-Stock

1+ parts

$0.028

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-

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50

$0.028

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DF Sales Co.

USA . 50 parts In-Stock

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$0.028

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50

$0.028

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.112

100+ parts

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50

$0.112

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TME

Poland . 9 parts In-Stock

1+ parts

$0.280

100+ parts

$0.122

1k+ parts

$0.079

10k+ parts

$0.061

9

$0.280

$0.122

$0.079

$0.061

Chip Stock

USA . 339,500 parts In-Stock

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NAC Semi

USA . 273,000 parts In-Stock

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Vyrian

USA . 172,922 parts In-Stock

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IBS Electronics

USA . 162,000 parts In-Stock

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$0.086

162,000

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$0.086

Rutronik

Germany . 123,000 parts In-Stock

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$0.048

123,000

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$0.048

Sensible Micro Corp

USA . 79,153 parts In-Stock

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Cyclops Electronics Ltd

UK . 48,900 parts In-Stock

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48,900

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LIBRA Elektronik GmbH

Germany . 15,139 parts In-Stock

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Semtec, LLC

USA . 6,000 parts In-Stock

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Classic Components Corporation

USA . 4,994 parts In-Stock

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Bristol Electronics

USA . 3,747 parts In-Stock

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Micros

Poland . 3,000 parts In-Stock

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$0.046

3,000

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$0.046

Rebound Electronics

UK . 3,000 parts In-Stock

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Partservice

France . 3,000 parts In-Stock

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$0.115

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$0.044

3,000

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$0.115

$0.044

QIE Inc.

USA . 2,987 parts In-Stock

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2,987

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Micros sp.j. W. Kędra i J. Lic

Poland . 2,875 parts In-Stock

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$0.119

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$0.052

2,875

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$0.119

$0.052

Speed Components Ltd

Israel . 2,480 parts In-Stock

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2,480

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ComSIT Distribution GmbH

Germany . 1,890 parts In-Stock

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ComSIT USA

USA . 1,890 parts In-Stock

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Connector Distribution Corp

USA . 1,800 parts In-Stock

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Right Parts Inc.

USA . 1,800 parts In-Stock

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1,800

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Inventory MP

USA . 1,264 parts In-Stock

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VNN

France . 1,134 parts In-Stock

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PC Components Company LLC

USA . 610 parts In-Stock

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610

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Prism Electronics

USA . 370 parts In-Stock

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370

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Lantek

USA . 78 parts In-Stock

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78

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Elcom Components

USA . 78 parts In-Stock

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78

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 170,618 parts In-Stock

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$0.028

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170,618

$0.028

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Semicontronic

India . 169,645 parts In-Stock

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$0.028

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$0.027

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$0.027

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169,645

$0.028

$0.027

$0.027

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Argo Parts USA

USA . 606 parts In-Stock

1+ parts

$0.087

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$0.084

606

$0.087

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$0.084

Modulus Dynamics

Lithuania . 10,325 parts In-Stock

1+ parts

$0.099

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$0.099

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$0.099

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10,325

$0.099

$0.099

$0.099

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Corohmni

South Africa . 25 parts In-Stock

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$0.099

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25

$0.099

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.102

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$0.097

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$0.097

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100

$0.102

$0.097

$0.097

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.110

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$0.105

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500

$0.110

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$0.105

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Aztec Data Supply Inc.

USA . 3,182 parts In-Stock

1+ parts

$1.872

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3,182

$1.872

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Eastek

USA . 837,000 parts In-Stock

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Perfect Parts

USA . 262,705 parts In-Stock

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262,705

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Glotronic Ltd.

UK . 118,800 parts In-Stock

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iodParts Technologies Inc.

India . 19,360 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,863 parts In-Stock

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17,863

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Kepictronics

USA . 17,000 parts In-Stock

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Lixinc

USA . 7,664 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Futuretech Components

Singapore . 3,000 parts In-Stock

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Metaverse IC Inc.

Canada . 2,475 parts In-Stock

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2,475

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Robosynatics

Brazil . 764 parts In-Stock

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$0.097

1k+ parts

$0.095

10k+ parts

$0.095

764

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$0.097

$0.095

$0.095

Lucentia Tech

USA . 764 parts In-Stock

1+ parts

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100+ parts

$0.097

1k+ parts

$0.095

10k+ parts

$0.095

764

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$0.097

$0.095

$0.095

Continental Prestige Electronics

USA . 370 parts In-Stock

1+ parts

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100+ parts

$0.138

1k+ parts

$0.069

10k+ parts

$0.052

370

-

$0.138

$0.069

$0.052

GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Looking for a reliable and efficient small signal Field Effect Transistor? Look no further than the BSS123W-7-F by Diodes Incorporated. With a reputation for quality and innovation, this N-channel transistor with a built-in diode is perfect for switching applications. Its compact design and high performance make it a valuable asset for your electronic projects. Trust Diodes Incorporated to deliver cutting-edge technology that meets your needs and exceeds your expectations. Choose the BSS123W-7-F for unmatched quality and reliability in the field of semiconductor components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching operations.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and enhances functionality.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimum performance.

Surface Mount: YES

Can be easily mounted on PCBs for compact and efficient circuit design.

Minimum DS Breakdown Voltage: 100 V

Capable of handling high voltage applications.

Maximum Drain Current (Abs) (ID): 0.17 A

Supports adequate current for various applications.

Maximum Power Dissipation (Abs): 0.2 W

Efficiently dissipates heat to prevent overheating.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for versatility in different environments.

Minimum Operating Temperature: -55 °C

Capable of functioning in low-temperature environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS123W-7-F attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

.17 A

Maximum Drain Current (ID):

.17 A

Maximum Drain-Source On Resistance:

6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

6 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSS123W-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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