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SBSS138LT1

Onsemi

SBSS138LT1 by Onsemi

SBSS138LT1 by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, 0.2A ID, and 3.5Ω RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package with GULL WING terminals.

Median Price

$1.578

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 3,000 parts In-Stock

1+ parts

$1.578

100+ parts

$1.499

1k+ parts

$1.499

10k+ parts

-

3,000

$1.578

$1.499

$1.499

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 178 parts In-Stock

1+ parts

$1.499

100+ parts

-

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178

$1.499

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Vyrian

USA . 2,974 parts In-Stock

1+ parts

-

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2,974

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-

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Elcom Components

USA . 2,430 parts In-Stock

1+ parts

-

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2,430

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Nova Conductors

Japan . 750 parts In-Stock

1+ parts

-

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750

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,810 parts In-Stock

1+ parts

$1.340

100+ parts

-

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-

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2,810

$1.340

-

-

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Semicontronic

India . 2,536 parts In-Stock

1+ parts

$1.340

100+ parts

$1.306

1k+ parts

$1.300

10k+ parts

-

2,536

$1.340

$1.306

$1.300

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Corphita

USA . 770 parts In-Stock

1+ parts

$1.420

100+ parts

-

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770

$1.420

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-

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$1.578

100+ parts

$1.499

1k+ parts

$1.499

10k+ parts

-

3,000

$1.578

$1.499

$1.499

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Corohmni

South Africa . 309 parts In-Stock

1+ parts

$1.578

100+ parts

-

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309

$1.578

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Aztec Data Supply Inc.

USA . 3,220 parts In-Stock

1+ parts

$1.725

100+ parts

-

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3,220

$1.725

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SupplyDigital Components

Austria . 6,705 parts In-Stock

1+ parts

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6,705

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Problanco Electronics

Mexico . 6,602 parts In-Stock

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6,602

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Kulean Microsystems

USA . 5,017 parts In-Stock

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5,017

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Argo Parts USA

USA . 3,537 parts In-Stock

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3,537

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Bastille Electronics

Australia . 2,873 parts In-Stock

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2,873

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TANS Electronics

Latvia . 1,610 parts In-Stock

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1,610

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UHIMA Technologies

Türkiye . 841 parts In-Stock

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841

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Continental Prestige Electronics

USA . 514 parts In-Stock

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514

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Robosynatics

Brazil . 100 parts In-Stock

1+ parts

-

100+ parts

$73.787

1k+ parts

$73.787

10k+ parts

$73.787

100

-

$73.787

$73.787

$73.787

Lucentia Tech

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$73.787

1k+ parts

$73.787

10k+ parts

$73.787

100

-

$73.787

$73.787

$73.787

Overview

Enhance your electronic designs with the SBSS138LT1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Field Effect Transistors that are perfect for switching applications. This N-CHANNEL transistor with a built-in diode offers superior performance and reliability. With a minimum DS Breakdown Voltage of 50V and a maximum Drain Current of 0.2A, this transistor provides excellent value and efficiency for your projects. Upgrade your circuits today with the SBSS138LT1 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow and control in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode for specific applications.

Transistor Application: SWITCHING

Designed for switching applications, making it suitable for various electronic devices.

Surface Mount: YES

Easy to install and suitable for compact circuit board designs.

Minimum DS Breakdown Voltage: 50 V

Can handle higher voltage levels, making it versatile for different voltage requirements.

Terminal Form: GULL WING

Facilitates easy soldering and reliable electrical connections.

Operating Mode: ENHANCEMENT MODE

Offers enhanced performance in terms of switching speed and efficiency.

Package Style (Meter): SMALL OUTLINE

Occupies less space on the circuit board, ideal for compact electronic devices.

Transistor Element Material: SILICON

Provides reliable performance and stable characteristics for the transistor.

Maximum Drain Current (ID): 0.2 A

Can handle up to 0.2 Amperes of current, suitable for low power applications.

Maximum Drain-Source On Resistance: 3.5 ohm

Offers low resistance for efficient current flow and minimal power loss.

Terminal Position: DUAL

Facilitates easy installation and connection in the circuit.

Maximum Feedback Capacitance (Crss): 5 pF

Provides minimal capacitance, reducing the risk of signal distortion.

Technical Specifications

Small Signal Field Effect Transistors (FET) SBSS138LT1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SBSS138LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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