Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SFT1407-TL-E
Onsemi
SFT1407-TL-E by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 45V DS Breakdown Voltage, 14A ID, and 0.028 ohm RDS(on). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a SMALL OUTLINE package.
DRAIN
SINGLE
45 V
14 A
.028 ohm
METAL-OXIDE SEMICONDUCTOR
190 pF
R-PSSO-G2
e6
1
2
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
1 W
20 W
YES
Tin/Bismuth (Sn/Bi)
GULL WING
SWITCHING
SILICON
2V7002LT3G
2V7002LT3G by Onsemi is a N-CHANNEL FET with a min DS Breakdown Voltage of 60V, ideal for SWITCHING applications. It features a Max Drain Current of 0.115A and Max Power Dissipation of 0.3W. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE and has a max operating temperature of 150°C.
SINGLE WITH BUILT-IN DIODE
60 V
.115 A
7.5 ohm
5 pF
TO-236
R-PDSO-G3
e3
3
150 Cel
-55 Cel
260
.3 W
AEC-Q101
FET General Purpose Power
MATTE TIN
DUAL
30
NTMFS4833NST1G
NTMFS4833NST1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 156A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 86.2W. The transistor features a built-in diode, current sensor, and Kelvin sensor in an 8-terminal package suitable for surface mount technology.
SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR
30 V
156 A
16 A
R-PDSO-F8
8
86.2 W
TIN
FLAT
NTMFS4833NST3G
NTMFS4833NST3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 16A and 86.2W power dissipation in a small outline package style. Operating at up to 150 °C, it offers high performance in various electronic devices.
NTMFS4854NST1G
NTMFS4854NST1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 149A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, current sensor, and operates in ENHANCEMENT MODE. With a max power dissipation of 86.2W and operating temperature up to 150 °C, this transistor is suitable for high-power electronic systems.
25 V
149 A
15.2 A
NTMFS4854NST3G
NTMFS4854NST3G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 149A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 86.2W. The transistor features a built-in diode, current sensor, and Kelvin sensor in an 8-terminal package suitable for surface mount assembly.
NTR1P02LT1H
NTR1P02LT1H by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and can handle up to 1.3A Drain Current. This ENHANCEMENT MODE transistor comes in a RECTANGULAR package with GULL WING terminals, suitable for surface mount technology.
20 V
1.3 A
P-CHANNEL
NTMFS4925NET1G
NTMFS4925NET1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 48A ID, and 0.001 ohm RDS. Ideal for power management applications due to its 23.2W Pdiss and ENHANCEMENT MODE operation at up to 150 °C. Suitable for surface mount designs with PLASTIC/EPOXY package and built-in diode configuration.
48 A
16.7 A
.001 ohm
R-PDSO-F5
5
23.2 W
NTMS5835NLR2G
NTMS5835NLR2G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage and 12A Drain Current. Ideal for applications requiring high power dissipation up to 2.6W, such as in small outline packages where space is limited. Operating in enhancement mode, it offers low on-resistance of 0.014 ohm for efficient performance at temperatures up to 150 °C.
40 V
12 A
9.2 A
.014 ohm
R-PDSO-G8
NOT SPECIFIED
2.6 W
Tin (Sn)
NTMS5838NLR2G
NTMS5838NLR2G by Onsemi is a N-CHANNEL FET with 40V DS breakdown voltage, 7.5A max drain current, and 0.0308 ohm RDS(on). Ideal for applications requiring high power dissipation in small outline packages at up to 150°C operating temperature.
7.5 A
5.8 A
.0308 ohm
NMLU1210TWG
NMLU1210TWG by Onsemi is an N-CHANNEL FET for SWITCHING applications. It features a max Drain Current of 1.16A, Drain-Source On Resistance of 0.032 ohm, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor with METAL-OXIDE SEMICONDUCTOR technology is ideal for compact electronic devices requiring efficient power management.
COMPLEX
1.16 A
.032 ohm
S-XDSO-N6
6
UNSPECIFIED
SQUARE
NO LEAD
NTLUS3A18PZTAG
NTLUS3A18PZTAG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 8.2A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a SQUARE package suitable for SURFACE MOUNT technology.
ULTRA LOW RESISTANCE
8.2 A
5.1 A
.018 ohm
S-PDSO-N6
3.8 W
Other Transistors
NTLUS3A18PZTBG
NTLUS3A18PZTBG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 8.2A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE at up to 150 °C temperature.
SMMBF4391LT1G
SMMBF4391LT1G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 3.5pF Crss, and -55 to 150 °C operating temperature range. This SMALL OUTLINE transistor with GULL WING terminals is ideal for DEPLETION MODE operation in various electronic circuits.
30 ohm
JUNCTION
3.5 pF
DEPLETION MODE
.225 W
NVF2201NT1G
NVF2201NT1G by Onsemi is a N-CHANNEL FET with 0.3A max drain current and 0.15W max power dissipation. Ideal for surface mount applications, it operates at up to 150 °C making it suitable for various electronic devices requiring high temperature resistance.
.3 A
.15 W
FET General Purpose Powers
NTTFS4C05NTAG
NTTFS4C05NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 75A Drain Current, and 0.0051 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE at up to 150°C with Matte Tin finish.
75 A
.0051 ohm
S-PDSO-F5
33 W
Matte Tin (Sn) - annealed
NTMFS4C06NT3G
NTMFS4C06NT3G by Onsemi is a N-CHANNEL FET with 69A max drain current and 30.5W power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features METAL-OXIDE SEMICONDUCTOR technology. Suitable for surface mount configurations, it offers reliability in various electronic designs.
69 A
30.5 W
NTTFS3A08PZTAG
NTTFS3A08PZTAG by Onsemi is a P-CHANNEL FET with 22A max drain current and 4.9W power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and power management systems.
22 A
4.9 W
NVGS3443T1G
NVGS3443T1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 4.4A and 0.065 ohm Drain-Source Resistance, operating in ENHANCEMENT MODE at up to 150 °C. This SMALL OUTLINE transistor with GULL WING terminals is designed for high power dissipation and AEC-Q101 compliance.
4.4 A
2.2 A
.065 ohm
R-PDSO-G6
2 W
NVMD6P02R2G
The Onsemi NVMD6P02R2G is a P-CHANNEL FET with 7.8A max drain current and 2W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and power management systems.
7.8 A
NTNS3A65PZT5G
NTNS3A65PZT5G by Onsemi is a P-CHANNEL FET with max drain current of 0.281A and power dissipation of 0.218W. Ideal for applications requiring high temperature resistance up to 150°C, such as in surface mount configurations for electronic devices.
.281 A
e4
.218 W
NICKEL PALLADIUM GOLD
NTTFS4C25NTWG
NTTFS4C25NTWG by Onsemi is a N-CHANNEL FET with 27A max drain current and 20.2W power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 150°C, ideal for high-power applications requiring surface mount configuration.
27 A
20.2 W
NTLUD3A50PZTAG
NTLUD3A50PZTAG by Onsemi is a P-CHANNEL FET with 4.4A max drain current and 2.2W max power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as automotive electronics and industrial control systems.
2.2 W
NTLUD3A50PZTBG
NTLUD3A50PZTBG by Onsemi is a P-CHANNEL FET with 4.4A max drain current and 2.2W max power dissipation. Ideal for small signal applications, it operates at up to 150 °C and features surface mount technology, making it suitable for various electronic devices.
NTZD3154NT1H
NTZD3154NT1H by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a min DS Breakdown Voltage of 20V, Max Drain Current of 0.54A, and Max Power Dissipation of 0.25W. This small outline transistor operates in enhancement mode with a max temperature of 150 °C.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
.54 A
.55 ohm
20 pF
R-PDSO-F6
.25 W
NTZD3155CT1H
NTZD3155CT1H by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 0.54A max drain current, and 0.55 ohm max on resistance.
N-CHANNEL AND P-CHANNEL
NTZS3151PT1H
NTZS3151PT1H by Onsemi is a P-CHANNEL FET with 0.86A max drain current and 0.21W power dissipation. Ideal for applications requiring surface mount technology, it operates at up to 150 °C and features metal-oxide semiconductor technology.
.86 A
.21 W
NTLUS3A18PZCTAG
NTLUS3A18PZCTAG by Onsemi is a P-CHANNEL FET with 8.2A max drain current and 3.8W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and industrial control systems.
NTLUS3A18PZCTBG
NTLUS3A18PZCTBG by Onsemi is a P-CHANNEL FET with 8.2A max drain current and 3.8W power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive electronics or power management systems.
SFT1345-TL-H
The Onsemi SFT1345-TL-H is a P-CHANNEL FET with 11A max drain current and 35W max power dissipation. Ideal for surface mount applications, it features metal-oxide semiconductor technology and tin bismuth terminal finish.
11 A
35 W
TIN BISMUTH
MCH3375-TL-H
MCH3375-TL-H by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 1.6A Drain Current, and 0.295 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150°C. Package: PLASTIC/EPOXY, Surface Mountable RECTANGULAR shape with FLAT terminals.
1.6 A
.295 ohm
R-PDSO-F3
.8 W
5LN01SP-AC
5LN01SP-AC by Onsemi is a N-CHANNEL FET with max drain current of 0.1A and power dissipation of 0.25W. Ideal for applications requiring single configuration, it operates at up to 150°C making it suitable for various electronic devices.
.1 A
e2
NO
Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
NVLJD4007NZTBG
NVLJD4007NZTBG by Onsemi is a N-CHANNEL FET with max drain current of 0.245A and power dissipation of 0.755W. Ideal for applications requiring small signal amplification in surface mount technology, operating at up to 150 °C.
.245 A
.755 W
NTTFS4C06NTWG
NTTFS4C06NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 67A Drain Current, and 0.0061 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 5 terminals and 31W Power Dissipation at 150°C max temp.
67 A
.0061 ohm
31 W
NTTFS4C13NTAG
NTTFS4C13NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 38A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 0.0094 ohm On Resistance, and operates in ENHANCEMENT MODE. This small outline transistor has a max power dissipation of 21.5W and can withstand temperatures up to 150 °C.
38 A
7.2 A
.0094 ohm
21.5 W
NTTFS4C13NTWG
NTTFS4C13NTWG by Onsemi is a N-channel FET with 30V DS breakdown voltage and 38A max drain current. Ideal for switching applications, it features a built-in diode, 0.0094 ohm RDS(on), and operates in enhancement mode. With a small outline package style and max power dissipation of 21.5W, it is suitable for high-temperature environments up to 150 °C.
5LP01SS-TL-E
5LP01SS-TL-E by Onsemi is a P-CHANNEL FET with 0.07A max drain current and 0.15W power dissipation. Ideal for applications requiring surface mount technology, such as temperature-sensitive circuits in consumer electronics.
.07 A
MCH3376-TL-E
MCH3376-TL-E by Onsemi is a P-CHANNEL FET with 1.5A max drain current and 0.8W power dissipation. Ideal for applications requiring surface mount technology, such as in METAL-OXIDE SEMICONDUCTOR circuits operating up to 150 °C.
1.5 A
SCH1330-TL-H
SCH1330-TL-H by Onsemi is a P-CHANNEL FET with 1.5A max drain current and 1W max power dissipation. Ideal for surface mount applications, it operates at up to 150 °C making it suitable for various electronic devices requiring high temperature resistance.
SCH1332-TL-H
SCH1332-TL-H by Onsemi is a P-CHANNEL FET with 2.5A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates up to 150 °C, making it suitable for various electronic devices requiring high-performance transistors.
2.5 A
SCH1343-TL-H
SCH1343-TL-H by Onsemi is a P-CHANNEL FET with 3.5A max drain current and 1W power dissipation. Ideal for applications requiring high temperature tolerance up to 150 °C, it features surface mount configuration for compact designs in electronics.
3.5 A
CPH3360-TL-H
CPH3360-TL-H by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1.6A Drain Current, 0.303 ohm On Resistance, and 150 °C Operating Temperature. Package: PLASTIC/EPOXY, GULL WING terminals in SMALL OUTLINE style.
.303 ohm
.9 W
SCH1345-TL-H
SCH1345-TL-H by Onsemi is a P-CHANNEL FET with 4.5A max drain current and 1W max power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as in surface mount configurations for electronic devices.
4.5 A
TF414T5G
TF414T5G by Onsemi is a N-CHANNEL FET with 0.1W power dissipation, suitable for surface mount applications. With a max operating temp of 150 °C and peak reflow temp of 260°C, it features junction technology and nickel palladium gold terminal finish. Ideal for small signal amplification in electronic circuits.
.1 W
NTMFD4C20NT3G
NTMFD4C20NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 9.1A ID, and 0.0108 ohm RDS(on). Ideal for SWITCHING applications, it features SERIES CONNECTED configuration in a SMALL OUTLINE package with METAL-OXIDE SEMICONDUCTOR technology.
DRAIN SOURCE
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
9.1 A
.0108 ohm
125 pF
1.88 W
6HP04MH-TL-W
6HP04MH-TL-W by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage. It features SINGLE configuration with built-in diode and resistor, suitable for surface mount applications. With 0.37A ID and 4.2Ω RDS(on), it's ideal for small outline packages in enhancement mode circuits.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
.37 A
4.2 ohm
4.1 pF
.6 W
NTMFS4847NAT1G
NTMFS4847NAT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 11.5A ID, and 0.0062 ohm RDS(ON). It's used for SWITCHING applications in ENHANCEMENT MODE with built-in DIODE, suitable for surface mount technology.
11.5 A
.0062 ohm
PCP1405-TD-H
The Onsemi PCP1405-TD-H is a N-CHANNEL FET with 0.6A max drain current and 3.5W max power dissipation. Ideal for surface mount applications, it operates up to 150 °C making it suitable for various electronic devices requiring high temperature tolerance.
.6 A
3.5 W
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