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NMLU1210TWG

Onsemi

NMLU1210TWG by Onsemi

NMLU1210TWG by Onsemi is an N-CHANNEL FET for SWITCHING applications. It features a max Drain Current of 1.16A, Drain-Source On Resistance of 0.032 ohm, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor with METAL-OXIDE SEMICONDUCTOR technology is ideal for compact electronic devices requiring efficient power management.

Median Price

$3.310

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Chip1Stop

Japan . 32 parts In-Stock

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$3.310

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Flip Electronics (Authorized)

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Nova Conductors

Japan . 24 parts In-Stock

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$1.462

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Digiode

USA . 349 parts In-Stock

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Chip Stock

USA . 8,811 parts In-Stock

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Vyrian

USA . 3,549 parts In-Stock

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Flip Electronics

USA . 96 parts In-Stock

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Prism Electronics

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Continental Prestige Electronics

USA . 3,780 parts In-Stock

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$1.040

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$1.019

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Argo Parts USA

USA . 966 parts In-Stock

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$1.040

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Corohmni

South Africa . 167 parts In-Stock

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$1.404

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Advanced Electronics

New Zealand . 150 parts In-Stock

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$1.491

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$1.491

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$1.491

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Aztec Data Supply Inc.

USA . 5,419 parts In-Stock

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$1.780

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Ampacity Inc.

Singapore . 64 parts In-Stock

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$2.810

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Semicontronic

India . 64 parts In-Stock

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$2.810

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$2.740

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$2.726

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Corphita

USA . 508 parts In-Stock

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$2.979

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AZTECH Wire

Italy . 850 parts In-Stock

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$15.814

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RC Electronics

USA . 7,500 parts In-Stock

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TANS Electronics

Latvia . 5,702 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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SupplyDigital Components

Austria . 4,024 parts In-Stock

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UHIMA Technologies

Türkiye . 871 parts In-Stock

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Futuretech Components

Singapore . 538 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$1.359

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Kepictronics

USA . 100 parts In-Stock

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GreenTree Electronics

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Authorized Procurement Solutions

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Overview

Upgrade your electronic projects with the NMLU1210TWG Small Signal Field Effect Transistor by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality components that are perfect for switching applications. This N-CHANNEL transistor, operating in enhancement mode, offers a maximum drain current of 1.16 A and a low on-resistance of 0.032 ohm. With its surface mount design and dual terminal position, this transistor is easy to install and highly efficient. Trust Onsemi for reliable components that will take your projects to the next level.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance and lower resistance compared to P-channel FETs, making them a good choice for high efficiency applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET provides fast switching speeds and efficient power handling, making it ideal for tasks requiring rapid on/off cycles.

Maximum Drain Current (ID): 1.16 A

With a high maximum drain current, this FET can handle relatively high power loads and is suitable for applications that require a significant amount of current.

Maximum Drain-Source On Resistance: 0.032 ohm

Low on-resistance allows for minimal power dissipation and efficient current flow, making this FET suitable for applications where low power loss is crucial.

Package Shape: SQUARE

The square package shape offers easy mounting and efficient use of space on a circuit board, making it convenient for compact design requirements.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides stable performance, low leakage current, and high reliability, making this FET a dependable choice for various applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NMLU1210TWG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Configuration:

Maximum Drain Current (ID):

1.16 A

Maximum Drain-Source On Resistance:

.032 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-XDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

UNSPECIFIED

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NMLU1210TWG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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