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COMPLEX Small Signal Field Effect Transistors (FET) 8

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NMLU1210TWG by Onsemi

NMLU1210TWG

Onsemi

NMLU1210TWG by Onsemi is an N-CHANNEL FET for SWITCHING applications. It features a max Drain Current of 1.16A, Drain-Source On Resistance of 0.032 ohm, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor with METAL-OXIDE SEMICONDUCTOR technology is ideal for compact electronic devices requiring efficient power management.

DRAIN

COMPLEX

1.16 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

S-XDSO-N6

e3

1

2

6

ENHANCEMENT MODE

UNSPECIFIED

SQUARE

SMALL OUTLINE

260

N-CHANNEL

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

TPIC1502DW by Texas Instruments

TPIC1502DW

Texas Instruments

TPIC1502DW by Texas Instruments is a N-CHANNEL FET with 1.5A max drain current, 0.3 ohm max on resistance, and 11 elements. It is used as an amplifier in various applications due to its small outline package style and dual terminal position.

COMPLEX

1.5 A

.005 A

.3 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G24

11

24

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

AMPLIFIER

SILICON

BF1205C,115 by NXP Semiconductors

BF1205C,115

NXP Semiconductors

NXP Semiconductors' BF1205C,115 is a N-CHANNEL FET for SWITCHING applications. It has a 6V DS Breakdown Voltage and max Drain Current of 0.03A. With PLASTIC/EPOXY body, it operates in ENHANCEMENT MODE at 150°C.

COMPLEX

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

SI1865DL-T1-GE3 by Vishay Intertechnology

SI1865DL-T1-GE3

Vishay Intertechnology

SI1865DL-T1-GE3 by Vishay Intertechnology is a P-channel FET with 2 elements and 6 terminals. Operating in enhancement mode, it has a max temp of 150°C and 0.215 ohm RDS(on). Ideal for switching applications, this MOSFET features a small outline package with gull wing terminals.

ESD PROTECTION

COMPLEX

.215 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

Not Qualified

YES

PURE MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

NTGD1100LT1G by Onsemi

NTGD1100LT1G

Onsemi

NTGD1100LT1G by Onsemi is a Small Signal FET with N/P-Channel, used for switching applications. It has a max drain current of 3.3A, on-resistance of 0.14 ohm, and breakdown voltage of 8V. The package is surface mountable with Gull Wing terminals in a rectangular shape, operating at up to 150°C.

COMPLEX

8 V

3.3 A

3.3 A

.14 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.83 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTGD1100LT1 by Onsemi

NTGD1100LT1

Onsemi

NTGD1100LT1 by Onsemi is a Small Signal FET with N/P-Channel, used for switching applications. It features 8V DS Breakdown Voltage, 3.3A Drain Current, and 0.14ohm On Resistance. With Gull Wing terminals and a max temp of 150 °C, it's ideal for compact electronic designs requiring efficient power management.

COMPLEX

8 V

3.3 A

3.3 A

.14 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e0

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL AND P-CHANNEL

.83 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTJD1155LT1 by Onsemi

NTJD1155LT1

Onsemi

NTJD1155LT1 by Onsemi is a Small Signal FET with N/P-Channel, used for switching applications. It has a max drain current of 1.3A, on-resistance of 0.175 ohm, and operates at up to 150°C. The package is a small outline with Gull Wing terminals, made of metal-oxide semiconductor technology.

COMPLEX

8 V

1.3 A

1.3 A

.175 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e0

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL AND P-CHANNEL

.4 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

SWITCHING

SILICON

DMC25D0UVT-13 by Diodes Incorporated

DMC25D0UVT-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;

HIGH RELIABILITY

COMPLEX

25 V

3.2 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

47 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.2 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON