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BF1205C,115

NXP Semiconductors

BF1205C,115 by NXP Semiconductors

NXP Semiconductors' BF1205C,115 is a N-CHANNEL FET for SWITCHING applications. It has a 6V DS Breakdown Voltage and max Drain Current of 0.03A. With PLASTIC/EPOXY body, it operates in ENHANCEMENT MODE at 150°C.

Median Price

$0.202

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Chip1Stop

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Nova Conductors

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Advanced Electronics

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AZTECH Wire

Italy . 667 parts In-Stock

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Overview

Unleash the power of innovation with the BF1205C,115 by NXP Semiconductors. Designed with precision and expertise, this Small Signal Field Effect Transistor offers unparalleled performance in switching applications. With a high-quality construction and cutting-edge technology, this transistor delivers reliable and efficient operation. Elevate your projects to new heights with the value and benefits that only NXP Semiconductors can provide. Trust in the BF1205C,115 for exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are known for their low ON-resistance and high efficiency, making this transistor a reliable choice for switching applications.

Configuration: COMPLEX

The complex configuration of this transistor allows for versatile usage and compatibility with different circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and efficient performance.

Surface Mount: YES

With surface mount capability, this transistor can be easily integrated into compact electronic devices.

Minimum DS Breakdown Voltage: 6 V

The high breakdown voltage of 6V ensures the transistor can withstand voltage spikes and fluctuations in the circuit.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact footprint, ideal for space-constrained designs.

Terminal Form: GULL WING

The gull wing terminals make soldering easy and secure, ensuring reliable connections in the circuit.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for precise control over the transistor's conductivity, enhancing its performance in switching applications.

No. of Elements: 2

With two elements, this transistor can handle more complex tasks and high power requirements.

Maximum Drain Current (Abs) (ID): 0.03 A

The maximum drain current of 0.03A ensures the transistor can handle a moderate amount of current without overheating.

No. of Terminals: 6

With 6 terminals, this transistor offers flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 0.18 W

The maximum power dissipation of 0.18W indicates the transistor's ability to handle heat generated during operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this transistor ideal for compact electronic devices and PCB designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology ensures high reliability and performance in various operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments without compromising performance.

Transistor Element Material: SILICON

Silicon transistors offer high efficiency and reliability, making this product a dependable choice for electronic circuits.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals provides corrosion resistance and ensures long-term reliability.

Maximum Drain Current (ID): 0.03 A

The maximum drain current rating of 0.03A indicates the transistor's ability to handle current spikes without damage.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and connection options.

Technical Specifications

Small Signal Field Effect Transistors (FET) BF1205C,115 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

6 V

Maximum Drain Current (Abs) (ID):

.03 A

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BF1205C,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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