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BSS159NH6327XTSA2

Infineon Technologies

BSS159NH6327XTSA2 by Infineon Technologies

Infineon's BSS159NH6327XTSA2 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.23A ID, and 3.5Ω RDS(on). Ideal for depletion mode operation in small outline packages, it features a built-in diode and low feedback capacitance of 5.9pF.

Median Price

$0.304

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 41,073 parts In-Stock

1+ parts

$0.550

100+ parts

$0.215

1k+ parts

$0.145

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$0.106

41,073

$0.550

$0.215

$0.145

$0.106

Mouser Electronics

USA . 4,100 parts In-Stock

1+ parts

$0.550

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$0.215

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$0.142

10k+ parts

$0.099

4,100

$0.550

$0.215

$0.142

$0.099

Distrelec

Netherlands . 2,875 parts In-Stock

1+ parts

$0.550

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2,875

$0.550

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Newark

USA . 224 parts In-Stock

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$0.567

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$0.222

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$0.168

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224

$0.567

$0.222

$0.168

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Adafruit Industries

USA . 40 parts In-Stock

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$1.109

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$1.054

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$1.054

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40

$1.109

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$1.054

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EBV Elektronik

Germany . 1,719,000 parts In-Stock

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Arrow

USA . 492,000 parts In-Stock

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$0.082

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$0.082

Farnell

UK . 38,903 parts In-Stock

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$0.241

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$0.110

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$0.085

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$0.110

$0.085

Element14

Singapore . 35,604 parts In-Stock

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$0.304

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$0.200

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$0.127

35,604

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Avnet

USA . 27,000 parts In-Stock

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$0.078

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Chip1Stop

Japan . 19,499 parts In-Stock

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Verical

USA . 19,499 parts In-Stock

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$0.135

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Future Electronics

Canada . 12,000 parts In-Stock

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$0.074

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$0.074

Distributors (In-Stock)

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Digiode

USA . 776 parts In-Stock

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$0.119

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776

$0.119

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Nova Conductors

Japan . 400 parts In-Stock

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$0.225

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400

$0.225

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TME

Poland . 282 parts In-Stock

1+ parts

$0.540

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$0.172

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$0.138

10k+ parts

$0.131

282

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$0.172

$0.138

$0.131

NAC Semi

USA . 1,644,000 parts In-Stock

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$0.410

1,644,000

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$0.410

Vyrian

USA . 297,041 parts In-Stock

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Chip Stock

USA . 85,722 parts In-Stock

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IBS Electronics

USA . 15,000 parts In-Stock

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$0.101

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$0.101

Rutronik

Germany . 6,000 parts In-Stock

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$0.104

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VNN

France . 910 parts In-Stock

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Inventory MP

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Bristol Electronics

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Sensible Micro Corp

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Cyclops Electronics Ltd

UK . 107 parts In-Stock

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Prism Electronics

USA . 22 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 304,588 parts In-Stock

1+ parts

$0.062

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Corphita

USA . 286 parts In-Stock

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$0.112

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286

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Semicontronic

India . 298,749 parts In-Stock

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$0.135

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$0.132

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$0.131

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298,749

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Argo Parts USA

USA . 3,760 parts In-Stock

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$0.210

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$0.204

3,760

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$0.204

Continental Prestige Electronics

USA . 50,665 parts In-Stock

1+ parts

$0.483

100+ parts

$0.268

1k+ parts

$0.163

10k+ parts

$0.127

50,665

$0.483

$0.268

$0.163

$0.127

Corohmni

South Africa . 1,093 parts In-Stock

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$0.812

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Aztec Data Supply Inc.

USA . 2,895 parts In-Stock

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$0.984

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2,895

$0.984

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$1.109

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$1.054

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$1.054

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40

$1.109

$1.054

$1.054

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Modulus Dynamics

Lithuania . 25,839 parts In-Stock

1+ parts

$1.618

100+ parts

$1.553

1k+ parts

$1.489

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25,839

$1.618

$1.553

$1.489

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Eastek

USA . 3,657,000 parts In-Stock

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RC Electronics

USA . 50,013 parts In-Stock

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$0.230

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$0.210

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$0.210

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Perfect Parts

USA . 30,336 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,346 parts In-Stock

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Lixinc

USA . 19,300 parts In-Stock

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GreenTree Electronics

Israel . 15,000 parts In-Stock

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Robosynatics

Brazil . 9,712 parts In-Stock

1+ parts

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$0.582

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$0.570

10k+ parts

$0.570

9,712

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$0.582

$0.570

$0.570

Lucentia Tech

USA . 9,712 parts In-Stock

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$0.582

1k+ parts

$0.570

10k+ parts

$0.570

9,712

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$0.582

$0.570

$0.570

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Component Connect

USA . 3,000 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$0.220

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$0.214

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$0.209

500

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$0.209

Component Stockers USA

USA . 69 parts In-Stock

1+ parts

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100+ parts

$0.320

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$0.140

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$0.120

69

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$0.120

Overview

Unlock endless possibilities with the BSS159NH6327XTSA2 by Infineon Technologies. Crafted with precision and expertise, this Small Signal Field Effect Transistor offers unparalleled quality and reliability. Perfect for a wide range of applications, this N-CHANNEL transistor features a built-in diode, making it a versatile choice for your projects. Experience seamless performance with a minimum DS Breakdown Voltage of 60V and maximum Drain Current of 0.23A. Elevate your designs with this advanced technology, providing value, efficiency, and innovation at every turn.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and reliable performance in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel type provides efficient current flow and high gain, making it suitable for low-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances circuit protection and simplifies design integration, saving space and cost.

Surface Mount: YES

Surface mount capability enables easy PCB assembly and space-saving designs for compact electronic devices.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this FET can handle higher voltages for improved safety and reliability.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient PCB layout and space optimization in compact electronic designs.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and ensures secure connection in surface mount applications.

Operating Mode: DEPLETION MODE

Depletion mode operation provides design flexibility and efficient control in various analog and digital applications.

No. of Terminals: 3

With three terminals, this FET offers versatile connectivity options for different circuit configurations and functions.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers space-saving benefits while maintaining high performance and reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology ensures efficient switching and low power consumption in various electronic applications.

Transistor Element Material: SILICON

Silicon material provides excellent thermal stability, high electrical conductivity, and long-term reliability in operation.

Terminal Finish: TIN

Tin terminal finish ensures corrosion resistance and reliable solder joints for extended product lifespan.

Maximum Drain Current (ID): 0.23 A

With a maximum drain current of 0.23A, this FET can handle high current loads for robust performance in demanding applications.

Maximum Drain-Source On Resistance: 3.5 ohm

The low drain-source on resistance of 3.5 ohms reduces power loss and improves efficiency in circuit operation.

Terminal Position: DUAL

The dual terminal position offers flexible mounting options and simplified connectivity for various circuit configurations.

Maximum Feedback Capacitance (Crss): 5.9 pF

The low feedback capacitance of 5.9pF minimizes signal distortion and enhances high-frequency performance in amplification circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS159NH6327XTSA2 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5.9 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

BSS159NH6327XTSA2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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