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BS170_D26Z

Fairchild Semiconductor

BS170_D26Z by Fairchild Semiconductor

BS170_D26Z by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. It is used for SWITCHING applications, featuring 0.5A Drain Current and 5 ohm On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 0.83W and can withstand temperatures up to 150°C.

Median Price

$0.150

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Mouser Electronics

USA . 22,289 parts In-Stock

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Newark

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Element14

Singapore . 2,258 parts In-Stock

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Adafruit Industries

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Rochester

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DigiKey

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Master Electronics

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Chip1Stop

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Digiode

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IBS Electronics

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Nova Conductors

Japan . 700 parts In-Stock

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TME

Poland . 1,963 parts In-Stock

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DigiKey Marketplace

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Flip Electronics

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NAC Semi

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Schukat

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Chip Stock

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Micros

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Partservice

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Micros sp.j. W. Kędra i J. Lic

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Semtec, LLC

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Ampacity Inc.

Singapore . 129,036 parts In-Stock

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Corphita

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Continental Prestige Electronics

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Argo Parts USA

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Corohmni

South Africa . 66 parts In-Stock

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Aztec Data Supply Inc.

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Advanced Electronics

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RC Electronics

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Perfect Parts

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Supply Digital

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Robosynatics

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Lucentia Tech

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Overview

Discover the BS170_D26Z by Fairchild Semiconductor, a high-quality Small Signal Field Effect Transistor perfect for switching applications. Manufactured with precision and expertise, this N-CHANNEL transistor boasts a single configuration with a built-in diode, offering enhanced performance and reliability. With a minimum DS breakdown voltage of 60V and maximum drain current of 0.5A, this transistor provides optimal power dissipation and efficiency. Trust in Fairchild Semiconductor's advanced technology and innovation to meet your electronic component needs. Elevate your projects with the BS170_D26Z and experience unmatched value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Allows for efficient flow of electrons, enhancing performance in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient built-in diode feature simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance.

Minimum DS Breakdown Voltage: 60 V

Withstands high voltage operations, making it suitable for a wide range of applications.

Package Shape: ROUND

Compact round shape allows for easy mounting and integration into various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easier soldering during assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers precise control over the transistor's conductivity, improving performance in switching applications.

Maximum Drain Current (Abs) (ID): 0.5 A

Handles high current loads effectively, suitable for applications requiring switching of moderate power.

No. of Terminals: 3

Simplifies circuit connections and facilitates integration into various electronic designs.

Maximum Power Dissipation (Abs): 0.83 W

Efficiently dissipates heat generated during operation, ensuring optimal performance and reliability.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is space-saving and allows for easy installation in tight spaces.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Uses advanced MOSFET technology for improved performance and efficiency in switching applications.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, ideal for applications that require operation in elevated thermal environments.

Transistor Element Material: SILICON

Silicon material in the transistor element offers reliable and consistent performance over time.

Terminal Finish: TIN SILVER COPPER

Provides corrosion resistance and ensures stable electrical connections for long-term reliability.

Maximum Drain-Source On Resistance: 5 ohm

Low on-resistance minimizes power losses and improves efficiency in switching applications.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and soldering on the PCB.

Maximum Feedback Capacitance (Crss): 10 pF

Low feedback capacitance minimizes signal distortion and interference, ensuring stable performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BS170_D26Z attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.5 A

Maximum Drain Current (ID):

.5 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BS170_D26Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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