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BF1210

NXP Semiconductors

BF1210 by NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Terminal Finish: MATTE TIN; Transistor Application: AMPLIFIER;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,888 parts In-Stock

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2,888

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Digiode

USA . 678 parts In-Stock

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678

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Vyrian

USA . 134 parts In-Stock

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134

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Distributors (Availability)

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Native Components

USA . 562 parts In-Stock

1+ parts

$0.264

100+ parts

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$0.254

562

$0.264

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$0.254

Northwest PG Solutions

USA . 127 parts In-Stock

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$0.291

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$0.256

127

$0.291

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$0.256

One Stop Electronics

USA . 1,127 parts In-Stock

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$12.050

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1,127

$12.050

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UNI Independent Distributors

Spain . 2,265 parts In-Stock

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2,265

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Corphita

USA . 2,176 parts In-Stock

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2,176

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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Kepictronics

USA . 1,200 parts In-Stock

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1,200

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Alle Elektronik GmbH

Germany . 1,200 parts In-Stock

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1,200

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Perfect Parts

USA . 129 parts In-Stock

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129

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Technical Specifications

Small Signal Field Effect Transistors (FET) BF1210 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

6 V

Maximum Drain Current (Abs) (ID):

.03 A

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

DUAL GATE, ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF1210 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5925-15-125-1697, 5925151251697, 6110-00-566-5269, 6110005665269

NIIN

151251697, 005665269

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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