Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NTR5103NT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.26A drain current, and 2.5 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.42W at 150°C.
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Plastic and epoxy material provides good protection and durability for the transistor, making it suitable for various applications.
N-channel transistors typically have lower ON-resistance and higher electron mobility, allowing for efficient switching.
The built-in diode allows for reverse voltage protection and can simplify circuit design.
Designed for switching applications, making it ideal for use in power control circuits.
Surface mount capability allows for easy integration onto circuit boards, saving space and increasing efficiency.
With a high breakdown voltage, this transistor can withstand higher voltages without breakdown, making it suitable for various applications.
Rectangular package shape allows for easy placement and soldering onto circuit boards.
Enhancement mode transistors are normally OFF devices, allowing for better control and efficiency in switching applications.
Capable of handling a maximum drain current of 0.26 A, making it suitable for low to medium power applications.
3 terminals for easy connection and integration into circuits.
With a maximum power dissipation of 0.42 W, this transistor can handle moderate power levels without overheating.
Small outline package style saves space and allows for high component density on circuit boards.
Metal-oxide semiconductor technology provides good performance and reliability in various applications.
Capable of operating at temperatures up to 150°C, suitable for a wide range of operating conditions.
Silicon material ensures good performance, reliability, and durability for the transistor.
Matte tin finish provides good solderability and connectivity with other components in the circuit.
Low ON-resistance of 2.5 ohms allows for efficient switching and minimal power loss in the transistor.
Dual terminal position allows for flexible and convenient connection options.
Capable of withstanding peak reflow temperature for up to 30 seconds during soldering process.
Peak reflow temperature of 260°C ensures proper soldering and connectivity during manufacturing process.
Small Signal Field Effect Transistors (FET) NTR5103NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
NTR5103NT1G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - SOT23 16/Sep/2016
PCN Assembly/Origin - Mult Dev Mold Comp Chg 1/Apr/2020
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
BAV99
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Sensitron Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002-T1-E3
Vishay Intertechnology
Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
M39029/58-360
Glenair
CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;
LM317T
Texas Instruments
LM317T by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. Operating temperature ranges from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. With a max output current of 1.5A, this through-hole package regulator is ideal for power supply designs where adjustable voltage levels are needed.
LM358N
LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.
LM2931AZ-5.0G
Onsemi
LM2931AZ-5.0G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max output current of 0.1A. It has a max dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature-sensitive environments up to 125°C. The package style is cylindrical with wire terminals, ideal for rail packing methods in various electronic devices.
FDD5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
FDV304P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
ST3485EBDR
STMicroelectronics
ST3485EBDR by STMicroelectronics is a Line Driver & Receiver with 3.3V power supply, EIA-422/EIA-485 interface standard, and 30ns max transmit delay. It is ideal for industrial applications requiring differential output and operates in temperatures ranging from -40 to 85°C.
1N4148
Dc Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
OPA2277UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
SS14
Vishay Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM7805CT
Silicon Group
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;
LL4148
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Maximum Non Repetitive Peak Forward Current: 2 A; Maximum Reverse Recovery Time: .004 us; No. of Phases: 1; Maximum Operating Temperature: 175 Cel;
TCA6424ARGJR
TCA6424ARGJR by Texas Instruments is a CMOS parallel I/O port with 24 bits and 3 ports. It operates b/w -40 to 85°C, suitable for industrial applications. With a max clock frequency of 0.4 MHz, it offers low power consumption at only 0.03 mA supply current.
M39029/56-351
Itt Cannon
CONNECTOR ACCESSORY; MIL Conformity: YES; Terminal Type: WIRE; IEC Conformity: NO; Alternate Contact Sources: ITT CANNON; Associated Military - Specifications: MIL-C-38999;
Intersil
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Taiwan Semiconductor
TM4C1294NCPDTI3
TM4C1294NCPDTI3 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU family. It features 8KB data EEPROM, 20-Ch 12-Bit ADC channels, and 32 DMA channels. Ideal for industrial applications requiring high-speed processing, it offers connectivity options like CAN, Ethernet, I2C, SPI, UART, and USB.
DMN5L06K-7
Diodes Incorporated
DMN5L06K-7 by Diodes Inc. is a N-channel FET for switching applications. It has a 50V DS breakdown voltage, 0.3A max drain current, and 3 ohm max on-resistance. With a small outline package style, it operates b/w -65 to 150 °C and meets MIL-STD-202 standards.
NTR4101PT1G
NTR4101PT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It has a 20V DS Breakdown Voltage, 1.8A Drain Current, and 0.085 ohm On Resistance. With ENHANCEMENT MODE operation, it features GULL WING terminals in a RECTANGULAR package style for surface mount assembly at temperatures ranging from -55 to 150°C.
SI2323DS-T1-BE3
Vishay Intertechnology's SI2323DS-T1-BE3 is a P-CHANNEL FET with 20V DS breakdown voltage and 3.7A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.039 ohm RDS(on) and 140pF Crss, suitable for surface mount designs at -55 to 150°C temperature range.
2N7002K
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 5 pF; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DMC2400UV-7
DMC2400UV-7 by Diodes Inc. is a Small Signal FET with N/P-channel types, ideal for switching applications. It features 2 elements with built-in diode in a small outline package, operating in enhancement mode. With a max drain current of 1.03A and low on-resistance of 0.7 ohm, it offers efficient performance at temperatures ranging from -55 to 150°C.
2N7002P,235
NXP Semiconductors
NXP Semiconductors' 2N7002P,235 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.36A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C. Its PLASTIC/EPOXY package features GULL WING terminals and AEC-Q101 compliance.
LND150N3-GP003
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: O-PBCY-T3; Terminal Form: THROUGH-HOLE; Operating Mode: DEPLETION MODE;
DMG1012T-7
DMG1012T-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage, 0.63A max drain current, and 0.4ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C. This small outline transistor has a matte tin finish and built-in diode for efficient performance.
BSS123_R1_00001
Panjit International
Panjit International's BSS123_R1_00001 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6 ohm RDS. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, this MOSFET has GULL WING terminals and matte tin finish.
MMBF4117
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;
2N7000
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: BOTTOM; Qualification: Not Qualified; Transistor Application: SWITCHING;
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-30 Code: R-PDSO-G3; Minimum DS Breakdown Voltage: 60 V;
FDV303N-F169
FDV303N-F169 by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A ID, and 0.45 ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating from -55 to 150 °C, it's an ENHANCEMENT MODE transistor with built-in diode.
SI2369DS-T1-GE3
SI2369DS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage and 7.6A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.029 ohm On Resistance. This SMALL OUTLINE transistor has a max power dissipation of 2.5W and can withstand temperatures from -55 to 150°C.
FDS4935BZ
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
DMP10H4D2S-7
DMP10H4D2S-7 by Diodes Inc. is a P-channel FET with 100V DS breakdown voltage, 0.27A max drain current, and 4.2 ohm max on resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and -55°C min operating temp.
BS170-D27Z
BS170-D27Z by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage. It's used for SWITCHING applications, featuring 0.5A Drain Current and 5 ohm On Resistance. Operating at 150°C, it comes in a ROUND package with THROUGH-HOLE terminals.
2N7002
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;
IRLML2402TRPBF-1
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; No. of Elements: 1; JESD-609 Code: e3;
BSS138P,215
NXP Semiconductors' BSS138P,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.36A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1140W.
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NTR5198NLT1G
NTR5198NLT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 2.2A max drain current, and 0.205 ohm RDS(on). It's used in small outline packages for applications requiring high power dissipation up to 1.5W at 150°C, making it ideal for enhancement mode operations in various electronic circuits.
NTR5105PT1G
NTR5105PT1G by Onsemi is a P-CHANNEL FET for switching applications. It features a 60V DS breakdown voltage, 0.196A max drain current, and 6 ohm max on resistance. With a small outline package and operating temp up to 150°C, it's ideal for compact electronic devices requiring efficient power management.
NTR5198NLT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
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