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NTR5198NLT3G

Onsemi

NTR5198NLT3G by Onsemi

NTR5198NLT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 2.2A ID, and 0.205 ohm RDS(on). It's used in applications requiring small outline packages, such as power management circuits for electronic devices operating up to 150 °C.

Median Price

$7.720

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 1 parts In-Stock

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$7.720

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Flip Electronics (Authorized)

USA . 621,000 parts In-Stock

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Digiode

USA . 1,098 parts In-Stock

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$7.334

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Vyrian

USA . 1,948 parts In-Stock

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Flip Electronics

USA . 621,000 parts In-Stock

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Corphita

USA . 890 parts In-Stock

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$6.948

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Corohmni

South Africa . 148 parts In-Stock

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$7.720

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SupplyDigital Components

Austria . 8,353 parts In-Stock

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Kulean Microsystems

USA . 5,574 parts In-Stock

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TANS Electronics

Latvia . 2,516 parts In-Stock

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Problanco Electronics

Mexico . 1,152 parts In-Stock

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UHIMA Technologies

Türkiye . 606 parts In-Stock

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Perfect Parts

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Overview

Unleash the power of innovation with the NTR5198NLT3G by Onsemi, a cutting-edge Small Signal Field Effect Transistor. Manufactured by the renowned Onsemi, this N-CHANNEL FET offers unparalleled quality and reliability. Perfect for a variety of applications, this single configuration transistor comes with a built-in diode, ensuring optimal performance. Experience enhanced efficiency and power with a maximum drain current of 2.2A and a minimum DS breakdown voltage of 60V. Trust in Onsemi to deliver top-notch technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the transistor, ensuring reliability and ease of handling.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow and voltage control in electronic circuits.

Minimum DS Breakdown Voltage: 60 V

Suitable for various low to medium voltage applications, providing a safety margin.

Maximum Drain Current (ID): 2.2 A

Capable of handling a relatively high current, making it suitable for a wide range of applications.

Maximum Power Dissipation (Abs): 1.5 W

Efficiently dissipates heat to prevent overheating and ensure long-term reliability.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, suitable for demanding environments.

Terminal Finish: Tin (Sn)

Provides a reliable and low resistance connection for enhanced performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTR5198NLT3G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

2.2 A

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.205 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NTR5198NLT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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