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NTR5198NLT1G

Onsemi

NTR5198NLT1G by Onsemi

NTR5198NLT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 2.2A max drain current, and 0.205 ohm RDS(on). It's used in small outline packages for applications requiring high power dissipation up to 1.5W at 150°C, making it ideal for enhancement mode operations in various electronic circuits.

Median Price

$0.087

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,484 parts In-Stock

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Arrow

USA . 8 parts In-Stock

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Farnell

UK . 1,937 parts In-Stock

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$0.290

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$0.098

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DigiKey

USA . 35,832 parts In-Stock

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$0.450

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$0.116

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$0.083

Mouser Electronics

USA . 20,663 parts In-Stock

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Flip Electronics (Authorized)

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Verical

USA . 87,000 parts In-Stock

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Master Electronics

USA . 87,000 parts In-Stock

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Element14

Singapore . 33,679 parts In-Stock

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$0.189

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Rochester

USA . 17,690 parts In-Stock

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$0.081

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$0.067

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Chip1Stop

Japan . 8,605 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 1,259 parts In-Stock

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TME

Poland . 8,375 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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IBS Electronics

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NAC Semi

USA . 837,000 parts In-Stock

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Flip Electronics

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Vyrian

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Chip Stock

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Electro Sonic

Canada . 102,000 parts In-Stock

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Sensible Micro Corp

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Cyclops Electronics Ltd

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ComSIT Distribution GmbH

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ComSIT USA

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DigiKey Marketplace

USA . 30,490 parts In-Stock

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Quantum Digital Technology

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Inventory MP

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Bristol Electronics

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Ampacity Inc.

Singapore . 143,954 parts In-Stock

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Semicontronic

India . 143,925 parts In-Stock

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Corohmni

South Africa . 439 parts In-Stock

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Corphita

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Argo Parts USA

USA . 4,719 parts In-Stock

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Modulus Dynamics

Lithuania . 7,021 parts In-Stock

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Continental Prestige Electronics

USA . 123,185 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,062 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Advanced Electronics

New Zealand . 15 parts In-Stock

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$1.566

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$1.425

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$1.284

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15

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GreenTree Electronics

Israel . 105,000 parts In-Stock

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Metaverse IC Inc.

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RC Electronics

USA . 80,283 parts In-Stock

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Allen Electronics Distributors

USA . 68,150 parts In-Stock

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Kepictronics

USA . 45,279 parts In-Stock

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Epart123

USA . 33,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,676 parts In-Stock

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BidChips

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Robosynatics

Brazil . 12,172 parts In-Stock

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Lucentia Tech

USA . 12,172 parts In-Stock

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iodParts Technologies Inc.

India . 11,860 parts In-Stock

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TANS Electronics

Latvia . 8,369 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 7,038 parts In-Stock

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SupplyDigital Components

Austria . 6,778 parts In-Stock

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Futuretech Components

Singapore . 6,000 parts In-Stock

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Lixinc

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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UHIMA Technologies

Türkiye . 576 parts In-Stock

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Overview

Enhance your electronic designs with the NTR5198NLT1G by Onsemi, a top-quality Small Signal Field Effect Transistor that offers reliability and efficiency. Manufactured by Onsemi, a leader in semiconductor technology, this N-CHANNEL FET is perfect for applications requiring a single configuration with a built-in diode. With a maximum drain current of 2.2 A and a low on-resistance, this transistor provides high performance while operating in enhancement mode. Ideal for a wide range of uses, this product delivers value and benefits to customers looking for quality components for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FET, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

Allows for efficient electron flow in the channel, enhancing the overall performance of the FET.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode, saving space and reducing the need for additional components.

Surface Mount: YES

Facilitates easy and secure mounting on circuit boards, making the FET suitable for various applications.

Minimum DS Breakdown Voltage: 60 V

Provides a high breakdown voltage, ensuring reliable operation in high voltage applications.

Package Shape: RECTANGULAR

Optimizes space utilization on PCBs, allowing for efficient placement of the FET within the circuit.

Operating Mode: ENHANCEMENT MODE

Enables the FET to operate efficiently with minimal power loss, enhancing overall energy efficiency.

Maximum Drain Current (Abs): 2.2 A

Supports high current applications, making the FET suitable for power amplification and switching circuits.

Maximum Power Dissipation (Abs): 1.5 W

Efficiently dissipates heat generated during operation, ensuring reliable performance under varying load conditions.

Package Style: SMALL OUTLINE

Compact package size allows for space-saving installation on PCBs, ideal for designs with limited space constraints.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high switching speeds and low power consumption, making the FET suitable for high-frequency applications.

Maximum Operating Temperature: 150 °C

Withstands high operating temperatures, ensuring stable performance in demanding environmental conditions.

Transistor Element Material: SILICON

Provides excellent thermal and electrical properties, enhancing the overall reliability and performance of the FET.

Terminal Finish: Matte Tin (Sn) - annealed

Ensures secure and reliable electrical connections, preventing oxidation and enhancing the lifespan of the FET.

Maximum Drain-Source On Resistance: 0.205 ohm

Low on-resistance minimizes power loss and improves efficiency in switching applications, enhancing overall performance.

Terminal Position: DUAL

Allows for versatile mounting options on PCBs, enabling flexible circuit layout and design.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures during soldering processes, ensuring reliable and secure connections in manufacturing.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTR5198NLT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

2.2 A

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.205 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

NTR5198NLT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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