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2V7002KT1G

Onsemi

2V7002KT1G by Onsemi

2V7002KT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.38A Drain Current, and 1.6ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C with a max power dissipation of 0.42W.

Median Price

$0.054

Lifecycle Status

Suppliers In-Stock

33

In-Stock Inventory

1k+

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Mouser Electronics

USA . 96,846 parts In-Stock

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$0.390

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Arrow

USA . 336,000 parts In-Stock

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Verical

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Farnell

UK . 261,358 parts In-Stock

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Element14

Singapore . 261,358 parts In-Stock

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Newark

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DigiKey

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Chip1Stop

Japan . 30,349 parts In-Stock

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Rochester

USA . 30,000 parts In-Stock

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Flip Electronics (Authorized)

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Master Electronics

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Freelance Electronics

USA . 1,250 parts In-Stock

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Digiode

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TME

Poland . 5,567 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Maritex

Poland . 2 parts In-Stock

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Vyrian

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NAC Semi

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NexGen Digital

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PC Components Company LLC

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Corohmni

South Africa . 340 parts In-Stock

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Ampacity Inc.

Singapore . 283,070 parts In-Stock

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Semicontronic

India . 205,586 parts In-Stock

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Corphita

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Argo Parts USA

USA . 4,843 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 106,724 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,445 parts In-Stock

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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Perfect Parts

USA . 15,635,015 parts In-Stock

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GreenTree Electronics

Israel . 684,060 parts In-Stock

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Component Connect

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Problanco Electronics

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Glotronic Ltd.

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Kulean Microsystems

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UHIMA Technologies

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Overview

Unleash the power of innovation with the 2V7002KT1G by Onsemi, a cutting-edge Small Signal Field Effect Transistor (FET) designed to revolutionize your switching applications. Crafted with precision and expertise by Onsemi, this N-CHANNEL transistor boasts a single configuration with a built-in diode for enhanced performance. Whether you're looking to optimize efficiency or streamline operations, this FET delivers on all fronts. Trust in the quality and reliability of Onsemi to take your projects to new heights. Elevate your technology with the 2V7002KT1G and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics compared to P-channel transistors, making this product a good choice for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Minimum DS Breakdown Voltage: 60 V

The high minimum breakdown voltage makes this transistor suitable for applications where voltage spikes may occur.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards, saving space and simplifying manufacturing processes.

Maximum Drain Current (Abs) (ID): 0.38 A

With a high maximum drain current, this transistor can handle higher loads without overheating.

Maximum Power Dissipation (Abs): 0.42 W

The low maximum power dissipation ensures that the transistor operates efficiently and does not generate excess heat.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, making it suitable for a wide range of environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2V7002KT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.38 A

Maximum Drain Current (ID):

.32 A

Maximum Drain-Source On Resistance:

1.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2V7002KT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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