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DMP2035U-7

Diodes Incorporated

DMP2035U-7 by Diodes Incorporated

DMP2035U-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage, 3.6A max drain current, and 0.045 ohm RDS(on). Ideal for switching applications in small outline packages, it operates in enhancement mode with a max temp of 150°C.

Median Price

$0.112

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 5,234 parts In-Stock

1+ parts

$0.517

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$0.188

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$0.105

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Future Electronics

Canada . 81,000 parts In-Stock

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Verical

USA . 1,794 parts In-Stock

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$0.048

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Arrow

USA . 10 parts In-Stock

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Flip Electronics

USA . 21,000 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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Mobius Materials

USA . 1,308 parts In-Stock

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$0.669

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$0.534

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IBS Electronics

USA . 966,000 parts In-Stock

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Chip Stock

USA . 520,750 parts In-Stock

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Component Sense

UK . 251,808 parts In-Stock

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Vyrian

USA . 206,189 parts In-Stock

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Cyclops Electronics Ltd

UK . 137,990 parts In-Stock

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NAC Semi

USA . 93,000 parts In-Stock

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North Shore Components

USA . 56,780 parts In-Stock

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ComSIT Distribution GmbH

Germany . 6,000 parts In-Stock

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Micros

Poland . 3,000 parts In-Stock

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$0.052

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Classic Components Corporation

USA . 3,000 parts In-Stock

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ComSIT USA

USA . 2,895 parts In-Stock

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Partservice

France . 2,888 parts In-Stock

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$0.116

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$0.051

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$0.051

Micros sp.j. W. Kędra i J. Lic

Poland . 2,668 parts In-Stock

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$0.131

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$0.058

2,668

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$0.058

Sensible Micro Corp

USA . 1,105 parts In-Stock

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Bristol Electronics

USA . 120 parts In-Stock

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Component Stockers USA

USA . 1,796,882 parts In-Stock

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Ampacity Inc.

Singapore . 200,174 parts In-Stock

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$0.044

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Semicontronic

India . 198,497 parts In-Stock

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$0.044

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$0.043

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198,497

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Aranea Global

USA . 100 parts In-Stock

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$0.110

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100

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Argo Parts USA

USA . 640 parts In-Stock

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$0.110

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640

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Corohmni

South Africa . 897 parts In-Stock

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Aztec Data Supply Inc.

USA . 170 parts In-Stock

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$0.881

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Modulus Dynamics

Lithuania . 18,018 parts In-Stock

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Advanced Electronics

New Zealand . 328 parts In-Stock

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$1.056

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$1.003

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$1.003

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328

$1.056

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$1.003

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Perfect Parts

USA . 1,128,761 parts In-Stock

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GreenTree Electronics

Israel . 855,000 parts In-Stock

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$0.064

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Eastek

USA . 399,000 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 91,124 parts In-Stock

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RC Electronics

USA . 74,433 parts In-Stock

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Continental Prestige Electronics

USA . 54,000 parts In-Stock

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$0.072

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$0.061

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Infinite Electronics LLP (Excess)

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Futuretech Components

Singapore . 12,000 parts In-Stock

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BidChips

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iBuyXS LLC

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Lixinc

USA . 8,292 parts In-Stock

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Component Connect

USA . 7,416 parts In-Stock

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S.R.D Solutions

India . 7,100 parts In-Stock

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iodParts Technologies Inc.

India . 6,000 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Formix International (Excess)

India . 1,938 parts In-Stock

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Robosynatics

Brazil . 1,474 parts In-Stock

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$0.797

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$0.780

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$0.780

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$0.780

Lucentia Tech

USA . 1,474 parts In-Stock

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$0.797

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$0.780

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$0.780

1,474

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$0.780

Assy Fe

Spain . 1,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 770 parts In-Stock

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Overview

Experience superior performance and reliability with the DMP2035U-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers high-quality small signal field-effect transistors that are ideal for switching applications. This P-channel transistor features a single configuration with a built-in diode, offering enhanced efficiency and functionality. With a maximum drain current of 3.6A and a low on-resistance of 0.045 ohm, this transistor provides exceptional value and benefits to customers looking for reliable and efficient electronic components. Upgrade your designs with the DMP2035U-7 and unleash the full potential of your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are suitable for high-speed switching applications, making this transistor ideal for switching purposes.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can be useful in protecting against reverse voltage.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and making assembly more efficient.

Maximum Drain Current: 3.6 A

With a high maximum drain current, this FET can handle demanding loads without overheating or failing.

Maximum Drain-Source On Resistance: 0.045 ohm

Low on-resistance means minimal power losses and improved efficiency during operation.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, making it suitable for a wide range of environments and applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP2035U-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3.6 A

Maximum Drain Current (ID):

3.6 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP2035U-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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